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Source author record

K. H. Wu

K. H. Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.supr-concond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2013arXiv

Doping evolution of Zhang-Rice singlet spectral weight: a comprehensive examination by x-ray absorption spectroscopy

The total spectral weight \textit{S} of the emergent low-energy quasipaticles in high-temperature superconductors is explored by x-ray absorption spectroscopy. In order to examine the applicability of the Hubbard model, regimes that cover from zero doping to overdoping are investigated. In contrast to mean field theory, we found that \textit{S} deviates from linear dependence on the doping level \textit{p}. The slope of \textit{S} versus \textit{p} changes continuously throughout the whole doping range with no sign of saturation up to \textit{p} = 0.23. Therefore, the picture of Zhang-Rice singlet remains intact within the most prominent doping regimes of HTSC's.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Parallel field magnetoresistance in topological insulator thin films

We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.

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preprint2013arXiv

THz Generation and Detection on Dirac Fermions in Topological Insulators

This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.

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preprint2012arXiv

Local photocurrent generation in thin films of the topological insulator Bi2Se3

We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quasiparticle dynamics and phonon softening in FeSe superconductors

Quasiparticle dynamics of FeSe single crystals revealed by dual-color transient reflectivity measurements (ΔR/R) provides unprecedented information on Fe-based superconductors. The amplitude of fast component in ΔR/R clearly tells a competing scenario between spin fluctuations and superconductivity. Together with the transport measurements, the relaxation time analysis further exhibits anomalous changes at 90 K and 230 K. The former manifests a structure phase transition as well as the associated phonon softening. The latter suggests a previously overlooked phase transition or crossover in FeSe. The electron-phonon coupling constant λ is found to be 0.16, identical to the value of theoretical calculations. Such a small λ demonstrates an unconventional origin of superconductivity in FeSe.

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preprint2011arXiv

Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions.

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preprint2010arXiv

Dynamical spectral weight in YBa$_2$Cu$_3$O$_y$ probed by x-ray absorption spectroscopy

The comprehensive study of the temperature dependent x-ray absorption spectroscopy (XAS) reveals a dynamical spectral weight $α$ in YBa$_2$Cu$_3$O$_y$ (YBCO). Large spectral weight changes for both the Upper Hubbard band and the Zhang-Rice band due to dynamics of holes are experimentally found in the underdoped regime. A large value of $α\geq 0.3$ is indispensable to describing XAS of YBCO with the conservation of states. The value of $α$ is linearly proportional to the pseudogap temperature in the underdoped regime, but becomes smaller as the doping level goes to the undoped limit. Our results clearly indicate that the pseudogap is related to the double occupancy and originates from bands in higher energies.

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preprint2010arXiv

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.

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