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Researcher profile

Y. Q. Li

Y. Q. Li contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gas

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Published work

4 published item(s)

preprint2013arXiv

Parallel field magnetoresistance in topological insulator thin films

We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Pomeranchuk effect and spin-gradient cooling of Bose-Bose mixtures in an optical lattice

We theoretically investigate finite-temperature thermodynamics and demagnetization cooling of two-component Bose-Bose mixtures in a cubic optical lattice, by using bosonic dynamical mean field theory (BDMFT). We calculate the finite-temperature phase diagram, and remarkably find that the system can be heated from the superfluid into the Mott insulator at low temperature, analogous to the Pomeranchuk effect in 3He. This provides a promising many-body cooling technique. We examine the entropy distribution in the trapped system and discuss its dependence on temperature and an applied magnetic field gradient. Our numerical simulations quantitatively validate the spin-gradient demagnetization cooling scheme proposed in recent experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.

0 citations0 reviewsNo code linkedOpen access