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K. Gao

K. Gao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallphysics.atom-phphysics.optics

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Published work

6 published item(s)

preprint2015arXiv

Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence

The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a doping by 0.02 at.% of Mn affects the valence-band edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of around 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic transport properties of indolyl spirooxazine/merooxazine-based light-driven molecular switch: The effect of amino/nitro substituents

By applying non-equilibrium Green's function formulation combined with first-principles density functional theory,we explore the electronic transport properties of indolinospironaphthoxazine (SO)/indolinomeronaphthoxazine (MO).The results indicate that the MO allows a far larger current than the SO.The substituent group can cause the shift of the energy levels.Higher ON/OFF current ratio can be obtained if either amino or nitro substituent is placed at the position of naphthalene moiety.Our results suggest that such molecular wires can generally display perfect switching function and the efficiency can be tuned flexibly by adding certain substituent groups to the molecules.

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preprint2012arXiv

Investigation on organic magnetoconductance based on polaron-bipolaron transition

We explore the magnetoresistance (MC) effect in an organic semiconductor device based on the magnetic field related bipolaron formation. By establishing a group of dynamic equations, we present the transition among spin-parallel, spin-antiparallel polaron pairs and bipolarons. The transition rates are adjusted by the external magnetic field as well as the hyperfine interaction of the hydrogen nuclei. The hyperfine interaction is addressed and treated in the frame work of quantum mechanics. By supposing the different mobility of polarons from that of bipolarons, we obtain the MC in an organic semiconductor device. The theoretical calculation is well consistent to the experimental data. It is predicated that a maximum MC appears at a suitable branching ratio of bipolarons. Our investigation reveals the important role of hyperfine interaction in organic magnetic effect.

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preprint2011arXiv

Hertz-level Measurement of the 40Ca+ 4s 2S1/2-3d 2D5/2 Clock Transition Frequency With Respect to the SI Second through GPS

We report a frequency measurement of the clock transition of a single ^40Ca^+ ion trapped and laser cooled in a miniature ring Paul trap with 10^-15 level uncertainty. In the measurement, we used an optical frequency comb referenced to a Hydrogen maser, which was calibrated to the SI second through the Global Positioning System (GPS). Two rounds of measurements were taken in May and June 2011, respectively. The frequency was measured to be 411 042 129 776 393.0(1.6) Hz with a fractional uncertainty of 3.9{\times}10^-15 in a total averaging time of > 2{\times}10^6 s within 32 days.

0 citations0 reviewsNo code linkedOpen access