Researcher profile

A. Stacey

A. Stacey contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Imaging current paths in silicon photovoltaic devices with a quantum diamond microscope

Magnetic imaging with nitrogen-vacancy centers in diamond, also known as quantum diamond microscopy, has emerged as a useful technique for the spatial mapping of charge currents in solid-state devices. In this work, we investigate an application to photovoltaic (PV) devices, where the currents are induced by light. We develop a widefield nitrogen-vacancy microscope that allows independent stimulus and measurement of the PV device, and test our system on a range of prototype crystalline silicon PV devices. We first demonstrate micrometer-scale vector magnetic field imaging of custom PV devices illuminated by a focused laser spot, revealing the internal current paths in both short-circuit and open-circuit conditions. We then demonstrate time-resolved imaging of photocurrents in an interdigitated back-contact solar cell, detecting current build-up and subsequent decay near the illumination point with microsecond resolution. This work presents a versatile and accessible analysis platform that may find distinct application in research on emerging PV technologies.

preprint2020arXiv

Cryogenic platform for coupling color centers in diamond membranes to a fiberbased microcavity

We operate a fiberbased cavity with an inserted diamond membrane containing ensembles of silicon vacancy centers (SiV$^-$) at cryogenic temperatures $ \geq4~$K. The setup, sample fabrication and spectroscopic characterization is described, together with a demonstration of the cavity influence by the Purcell effect. This paves the way towards solid state qubits coupled to optical interfaces as long-lived quantum memories.

preprint2020arXiv

Epitaxial growth of SiC on (100) Diamond

We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.