Researcher profile

K. Das Gupta

K. Das Gupta contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2022arXiv

Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures

A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interesting from fundamental and technological perspectives. This may be a potential indicator of triplet superconductivity, Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) pairing and other mechanisms involving topological aspects of surface states, and also allow Cooper pair injection at high magnetic fields. We have analysed the microscopic composition of such a material arising from an unexpected source. A microjet of an organo-metallic gas, $\rm {W[(CO)_6]}$ can be decomposed by gallium ion-beam, leaving behind a track of complex residue of gallium, tungsten and carbon with remarkable superconducting properties, like an upper critical field, $H_{c2} > 10~{\rm T} $, above its paramagnetic limit. We carried out Atomic probe tomography to establish the formation of nano-crystalline tungsten carbide (WC) in the tracks and the absence of free tungsten. Supporting calculations show for Ga distributed on the surface of WC, its s,p-orbitals enhance the density of states near the Fermi energy. The observed variation of $H_{c2}(T)$ does not show features typical of enhancement of critical field due to granularity. Our observations may be significant in the context of some recent theoretical calculation of the band structure of WC and experimental observation of superconductivity in WC-metal interface.

preprint2016arXiv

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.

preprint2014arXiv

Effect of parameter mismatch on the synchronization of strongly coupled self sustained oscillators

In this paper we present an experimental setup and an associated mathematical model to study the synchronization of two self sustained strongly coupled mechanical oscillators (metronomes). The effects of a small detuning in the internal parameters, namely damping and frequency, have been studied. Our experimental system is a pair of spring wound mechanical metronomes, coupled by placing them on a common base, free to move along a horizontal direction. In our system the mass of the oscillating pendula form a significant fraction of the total mass of the system, leading to strong coupling of the oscillators. We modified the internal mechanism of the spring-wound "clockwork" slightly, such that the natural frequency and the internal damping could be independently tuned. Stable synchronized and anti-synchronized states were observed as the difference in the parameters was varied. We designed a photodiode array based non-contact, non-magnetic position detection system driven by a microcontroller to record the instantaneous angular displacement of each oscillator and the small linear displacement of the base coupling the two. Our results indicate that such a system can be made to stabilize in both in-phase anti-phase synchronized state by tuning the parameter mismatch. Results from both numerical simulations and experimental observations are in qualitative agreement and are both reported in the present work.

preprint2014arXiv

Landau level spin diode in a GaAs two dimensional hole system

We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems.

preprint2013arXiv

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

preprint2012arXiv

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

preprint2011arXiv

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hopping or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities.

preprint2008arXiv

Low Temperature Transport in Undoped Mesoscopic Structures

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

preprint2008arXiv

On the Zero-Bias Anomaly in Quantum Wires

Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.