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Researcher profile

K. -D. Tsuei

K. -D. Tsuei contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2014arXiv

Contiguous 3d and 4f magnetism: towards strongly correlated 3d electrons in YbFe2Al10

We present magnetization, specific heat, and 27Al NMR investigations on YbFe2Al10 over a wide range in temperature and magnetic field. The magnetic susceptibility at low temperatures is strongly enhanced at weak magnetic fields, accompanied by a ln(T0/T) divergence of the low-T specific heat coefficient in zero field, which indicates a ground state of correlated electrons. From our hard X-ray photo emission spectroscopy (HAXPES) study, the Yb valence at 50 K is evaluated to be 2.38. The system displays valence fluctuating behavior in the low to intermediate temperature range, whereas above 400 K, Yb3+ carries a full and stable moment, and Fe carries a moment of about 3.1 mB. The enhanced value of the Sommerfeld Wilson ratio and the dynamic scaling of spin-lattice relaxation rate divided by T [27(1/T1T)] with static susceptibility suggests admixed ferromagnetic correlations. 27(1/T1T) simultaneously tracks the valence fluctuations from the 4f -Yb ions in the high temperature range and field dependent antiferromagnetic correlations among partially Kondo screened Fe 3d moments at low temperature, the latter evolve out of an Yb 4f admixed conduction band.

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preprint2013arXiv

THz Generation and Detection on Dirac Fermions in Topological Insulators

This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.

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preprint2012arXiv

Determining the in-plane orientation of the ground-state orbital of CeCu2Si2

We have successfully determined the hitherto unknown sign of the B44 Stevens crystal-field parameter of the tetragonal heavy-fermion compound CeCu2Si2 using vector q dependent non-resonant inelastic x-ray scattering (NIXS) experiments at the cerium N4,5 edge. The observed difference between the two different directions q||[100] and q||[110] is due to the anisotropy of the crystal-field ground state in the (001) plane and is observable only because of the utilization of higher than dipole transitions possible in NIXS. This approach allows us to go beyond the specific limitations of dc magnetic susceptibility, inelastic neutron scattering, and soft x-ray spectroscopy, and provides us with a reliable information about the orbital state of the 4f electrons relevant for the quantitative modeling of the quasi-particles and their interactions in heavy-fermion systems.

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preprint2012arXiv

Local correlations, non-local screening, multiplets, and band formation in NiO

We report on a comparative study of the valence band electronic structure of NiO as bulk material and of NiO as impurity in MgO. From the impurity we have been able to determine reliably the parameters which describe the local correlations, thereby establishing the compensated-spin character of the first ionization state or the state created by hole doping. Using bulk-sensitive x-ray photoemission we identify pronounced satellite features in the valence band of bulk NiO which cannot be explained by single-site many body approaches nor by mean field calculations. We infer the presence of screening processes involving local quasi-core states in the valence band and non-local coherent many body states. These processes are strong and the propagation of an extra hole in the valence band of NiO will therefore be accompanied by a range of high energy excitations. This in turn will make the observation of the dispersion relations in the Ni 3d bands difficult, also because the effective band width is no more than 0.25 eV as estimated from multi-site calculations.

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