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Researcher profile

F. Strigari

F. Strigari contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.other

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Published work

9 published item(s)

preprint2016arXiv

Quantitative study of the f occupation in CeMIn5 and other cerium compounds with hard x-rays

We present bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) data of the Ce3d core levels and lifetime-reduced L edge x-ray absorption spectroscopy (XAS) in the partial fluorescence yield (PFY) mode of the CeMIn5 family with M = Co, Rh, and Ir. The HAXPES data are analyzed quantitatively with a combination of full multiplet and configuration interaction model which allows correcting for the strong plasmons in the CeMIn5 HAXPES data, and reliable weights wn of the different fn contributions in the ground state are determined. The CeMIn5 results are compared to HAXPES data of other heavy fermion compounds and a systematic decrease of the hybridization strength Veff from CePd3 to CeRh3B2 to CeRu2Si2 is observed, while it is smallest for the three CeMIn5 compounds. The f-occupation, however, increases in the same sequence and is close to one for the CeMIn5 family. The PFY-XAS data confirm an identical f-occupation in the three CeMIn5 compounds and a phenomenological fit to these PFY-XAS data combined with a configuration interaction model yields consistent results.

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preprint2015arXiv

CeRu$_4$Sn$_6$: a strongly correlated material with nontrivial topology

Topological insulators form a novel state of matter that provides new opportunities to create unique quantum phenomena. While the materials used so far are based on semiconductors, recent theoretical studies predict that also strongly correlated systems can show non-trivial topological properties, thereby allowing even the emergence of surface phenomena that are not possible with topological band insulators. From a practical point of view, it is also expected that strong correlations will reduce the disturbing impact of defects or impurities, and at the same increase the Fermi velocities of the topological surface states. The challenge is now to discover such correlated materials. Here, using advanced x-ray spectroscopies in combination with band structure calculations, we infer that CeRu$_4$Sn$_6$ is a strongly correlated material with non-trivial topology.

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preprint2015arXiv

Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron spectroscopy

The occupancy of the 4f^n contributions in the Kondo semiconductors CeM2Al10(M = Ru, Os and Fe) has been quantitatively determined by means of bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) on the Ce 3d core levels. Combining a configuration interaction scheme with full multiplet calculations allowed to accurately describe the HAXPES data despite the presence of strong plasmon excitations in the spectra. The configuration interaction parameters obtained from this analysis -- in particular the hybridization strength V_eff and the effective f binding energy Delta_f -- indicate a slightly stronger exchange interaction in CeOs2Al10 compared to CeRu2Al10, and a significant increase in CeFe2Al10. This verifies the coexistence of a substantial amount of Kondo screening with magnetic order and places the entire CeM2Al10 family in the region of strong exchange interactions.

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preprint2014arXiv

Correlation between the phase diagram and the crystal-field wave functions of CeRh(1-x)Ir(x)In5

The 4f crystal-electric field ground state wave functions of CeRh(1-x)Ir(x)In5 have been determined by linear polarization dependent soft x-ray absorption spectroscopy (XAS) at T = 8 K. We demonstrate that these ground state wave functions correlate with the phase diagram of the substitution series, which covers long-range antiferromagnetic order, unconventional superconductivity, and coexistence of these two states. We discuss how certain wave functions could affect magnetic order and anisotropic hybridization, facilitating the formation of a superconducting ground state at low temperatures.

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preprint2012arXiv

Crystal-field ground state of the orthorhombic Kondo insulator CeRu2Al10

We have succeeded in establishing the crystal-field ground state of CeRu2Al10, an orthorhombic intermetallic compound recently identified as a Kondo insulator. Using polarization dependent soft x-ray absorption spectroscopy at the Ce M4,5 edges, together with input from inelastic neutron and magnetic susceptibility experiments, we were able to determine unambiguously the orbital occupation of the 4f shell and to explain quantitatively both the measured magnetic moment along the easy a axis and the small ordered moment along the c-axis. The results provide not only a platform for a realistic modeling of the spin and charge gap of CeRu2Al10, but demonstrate also the potential of soft x-ray absorption spectroscopy to obtain information not easily accessible by neutron techniques for the study of Kondo insulators in general.

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preprint2012arXiv

Determining the in-plane orientation of the ground-state orbital of CeCu2Si2

We have successfully determined the hitherto unknown sign of the B44 Stevens crystal-field parameter of the tetragonal heavy-fermion compound CeCu2Si2 using vector q dependent non-resonant inelastic x-ray scattering (NIXS) experiments at the cerium N4,5 edge. The observed difference between the two different directions q||[100] and q||[110] is due to the anisotropy of the crystal-field ground state in the (001) plane and is observable only because of the utilization of higher than dipole transitions possible in NIXS. This approach allows us to go beyond the specific limitations of dc magnetic susceptibility, inelastic neutron scattering, and soft x-ray spectroscopy, and provides us with a reliable information about the orbital state of the 4f electrons relevant for the quantitative modeling of the quasi-particles and their interactions in heavy-fermion systems.

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preprint2012arXiv

Local correlations, non-local screening, multiplets, and band formation in NiO

We report on a comparative study of the valence band electronic structure of NiO as bulk material and of NiO as impurity in MgO. From the impurity we have been able to determine reliably the parameters which describe the local correlations, thereby establishing the compensated-spin character of the first ionization state or the state created by hole doping. Using bulk-sensitive x-ray photoemission we identify pronounced satellite features in the valence band of bulk NiO which cannot be explained by single-site many body approaches nor by mean field calculations. We infer the presence of screening processes involving local quasi-core states in the valence band and non-local coherent many body states. These processes are strong and the propagation of an extra hole in the valence band of NiO will therefore be accompanied by a range of high energy excitations. This in turn will make the observation of the dispersion relations in the Ni 3d bands difficult, also because the effective band width is no more than 0.25 eV as estimated from multi-site calculations.

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preprint2011arXiv

Asymmetric orbital-lattice interactions in ultra-thin correlated oxide films

Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.

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preprint2011arXiv

Strain dependent transport properties of the quasi two-dimensional correlated metal, LaNiO$_{3}$

We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2K$\sim$170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to $\sim4%$ are used to investigate effects of enhanced carrier localization driven by a combination of weak localization and electron-electron interactions at low temperatures. The magneto-conductance data shows the importance of the increased contribution of weak localization to low temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature the quantum confined LNO system gradually evolves from the Mott into the Mott-Anderson regime.

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