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K. C. Bhamu

K. C. Bhamu contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Impressive Electronic Transport in Be$_2$C Monolayer

We present thermoelectric properties of Be$_2$C monolayer based on density functional theory and semi-classical Boltzmann transport theory. Electronic structure calculations predict this material as a semiconductor with a direct bandgap of 2.0 eV computed using Gaussian-attenuating Perdew-Burke-Ernzerhof (Gau-PBE) hybrid functional. The Gau-PBE band structure is used to compute transport properties by solving the Boltzmann transport equation under the constant relaxation time approximation. In this work, we have explicitly determined the relaxation time by studying the electron-phonon interactions in the system to estimate absolute transport coefficients. Our results show that the monolayer possesses a high power factor ($\sim$ 3.44 mW/mK$^2$ @300K), similar to the commercial TE materials doped-Bi$_2$Te$_3$ and PbTe, suggesting that Be$_2$C monolayer is a promising thermoelectric material.

preprint2020arXiv

Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications

A comprehensive study of the structural, electronic, and optical properties of lead-free perovskites has been carried out by means of first principles method based on DFT. The calculations are performed for the compound of the type A2BX6 with A=Rb, and Cs; B=Sn, Pd, and Pt; and X=Cl, Br, and I. The calculated structural parameters (lattice constants and bond lengths) agree well with the experiments. The computed band gap reveals a semiconducting profile for all these compounds showing a decreasing trend of the band gap energy by changing the halide ions consecutively from Cl to Br and Br to I. However, for variation in the B-site cation, the band gap increases by changing the cation from Pd to Pt via Sn. The most likely compounds, Rb2PdBr6 and Cs2PtI6, exhibit a band gap within the optimal range of 0.9-1.6 eV for single-junction photovoltaic applications. The optical properties in terms of the optimal value of the dielectric constant, optical conductivity, and absorption coefficient are also investigated upto the photon energy of 10 eV. Our results indicate that upon changing the halogen ions (Cl by Br and Br by I) the optical properties altered significantly. Maximum dielectric constants and high optical absorption are found for Rb2PdI6 and Cs2PtI6. The unique optoelectronic properties such as ideal band gap, high dielectric constants, and optimum absorption of A2BX6 perovskites could be efficiently utilized in designing high performance single and multi-junction perovskite solar cells.

preprint2020arXiv

Improving the Optical and Thermoelectric Properties of Cs2InAgCl6 with Substitutional Doping: A DFT Insight

New generation Indium based lead-free Cs2InAgCl6 is a promising halide material in photovoltaic applications due to its good air stability and non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar spectrum and hence reducing the photoelectronic efficiency for device applications. Here we report a significant band gap reduction from 3.3 eV to 0.6 eV by substitutional doping and its effect on opto-electronic and opto-thermoelectric properties from first-principles study. The results predict that Sn/Pb and Ga & Cu co-doping enhance the density of states significantly near the valence band maximum (VBM) and thus reduce the band gap by shifting the VBM upward while the alkali-metals (K/Rb) slightly increase the band gap. A strong absorption peak near Shockley-Queisser limit is observed in co-doped case while in Sn/Pb-doped case, we notice a peak in the middle of the visible region of solar spectrum. The nature of band gap is indirect with Cu-Ga/Pb/Sn doping with a significant reduction in the band gap. We observe a significant increase in the power factor (PF) (2.03 mW/mK2) for n-type carrier in Pb-dpoing, which is ~3.5 times higher than the pristine case (0.6 mW/mK2) at 500 K.