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Enamul Haque

Enamul Haque contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2020arXiv

An Efficient K-means Clustering Algorithm for Analysing COVID-19

COVID-19 hits the world like a storm by arising pandemic situations for most of the countries around the world. The whole world is trying to overcome this pandemic situation. A better health care quality may help a country to tackle the pandemic. Making clusters of countries with similar types of health care quality provides an insight into the quality of health care in different countries. In the area of machine learning and data science, the K-means clustering algorithm is typically used to create clusters based on similarity. In this paper, we propose an efficient K-means clustering method that determines the initial centroids of the clusters efficiently. Based on this proposed method, we have determined health care quality clusters of countries utilizing the COVID-19 datasets. Experimental results show that our proposed method reduces the number of iterations and execution time to analyze COVID-19 while comparing with the traditional k-means clustering algorithm.

preprint2020arXiv

Effect of Bi-substitution on Structural Stability and Improved Thermoelectric Performance of p-type Half-Heusler TaSbRu: A First-principles Study

Recently, Fang et al. have predicted a high ZT of 1.54 in TaSbRu alloys at 1200 K from first-principles without considering spin-orbit interaction, accurate electronic structure, details of phonon scattering, and energy-dependent holes relaxation time. Here, we report the details of structural stability and thermoelectric performance of Bi-Substituted p-type TaSbRu from first-principles calculations considering theses important parameters. This indirect bandgap semiconductor (Eg=0.8 eV by TB-mBJ+SOC) has highly dispersive and degenerate valence bands, which lead to a maximum power factor, 3.8 mWm-1K-2 at 300K. As Sb-5p has a small contribution to the bandgap formation, the substitution of Bi on the Sb site does not cause significant change to the electronic structure. Although the Seebeck coefficient increases by Bi due to slight changes in the bandgap, electrical conductivity, and hence, the power factor reduces to ~3 mW m-1K-2 at 300K (50% Bi). On the other side, lattice thermal conductivity drops effectively to 5 from 20 W/m K as Bi introduces a significant contribution in the acoustic phonon region and intensify phonon scattering. Thus, ZT value is improved through Bi-substitution, reaching 1.1 (50% Bi) at 1200 K from 0.45 (pure TaSbRu) only. Therefore, the present study suggests how to improve the TE performance of Sb-based half-Heusler compounds and TaSbRu (with 50% Bi) is a promising material for high-temperature applications.

preprint2020arXiv

Effect of electron-phonon scattering, pressure and alloying on the thermoelectric performance of TmCu$_3$Ch$_4$ (Tm=V, Nb, Ta; Ch=S, Se, Te)

The demand for green energy increases day by day due to environmental concern and thermoelectric (TE) materials are one of the eco-friendly energy resources. Few authors reported high TE performance in TmCu$_3$Ch$_4$, reaching the figure of merit (ZT) above 2 at 1000K, from first-principles calculations neglecting electron-phonon scattering, spin-orbit coupling effect (SOC), and energy-dependent carrier lifetime. Here, thermoelectric transport properties of TmCu$_3$Ch$_4$ are reinvestigated through considering these parameters, and significant discrepancies are found. The ZT of p-type TaCu$_3$Te$_4$ can reach ~3 at 1000K among these compounds due to its low lattice thermal conductivity ($κ_l$) (0.38 W m-1 K-1). Interestingly, the value of $κ_l$ is reduced to 0.17 W m-1 K-1 through 1 GPa pressure while the power factor is slightly improved due to bandgap reduction, leading to an extraordinary ZT~5.5 at 1000K. Although the substitution of Se causes a slight reduction of $κ_l$ to ~0.3 W m-1 K-1, the power factor is reduced significantly due to the dramatic reduction of DOS near Fermi level, which leads to lower the Seebeck coefficient largely and increase electrical conductivity slightly.

preprint2020arXiv

Extraordinary thermoelectric performance of ABaX compared to Bi$_2$Te$_3$

Thermoelectric materials can generate electricity directly utilizing heat and thus, they are considered to be eco-friendly energy resources. The thermoelectric efficiency at low temperatures is impractically small, except only a few bulk materials (Bi$_2$Te$_3$ and its alloys). Here, I predict two new thermoelectric materials, LiBaSb and NaBaBi, with excellent transport properties at low-medium temperature by using the first-principles method. The relatively low density of states near Fermi level, highly non-parabolic bands, and almost two times wider bandgap of NaBaBi lead to almost two times higher anisotropic power factor at 300K than that of Bi2Te3. On the other side, almost similar phonon density of states and anharmonicity of NaBaBi cause almost identical lattice thermal conductivity (but it is much higher in LiBaSb). These effects make it a superior thermoelectric material, with a predicted cross-plane (in-plane) ZT ~2 (~1) at 300 K for both n- and p-type carriers, even higher (~2.5 for p-type) at 350K. On the other hand, the isotropic maximum ZT of NaBaBi is ~1.2 and 1.6 at 350K for n and p-type carriers, respectively. However, LiBaSb is less suitable for low-temperature TE applications, because of its relatively wider bandgap and high lattice thermal conductivity.

preprint2020arXiv

First-principles prediction of Structural Stability and Thermoelectric Properties of SrGaSnH

Thermoelectric materials based on earth-abundant and non-toxic elements are very useful in cost-effective and eco-friendly waste heat management systems. The constituents of SrGaSnH are earth-abundant and non-toxic, thus we have chosen SrSnGaH to study its structural stability and thermoelectric properties by using DFT, DFPT, and semi-classical Boltzmann transport theory. Our elastic and phonons calculations show that the compound has good structural stability. The electronic structure calculation discloses that it is an indirect bandgap (0.63 eV by mBJ+SOC) semiconductor. Light band hole effective mass leads to higher electrical conductivity along x-axis than that of along z-axis. On the other side, the weak phonon scattering leads to high lattice thermal conductivity ~10.5 W m-1K-1 at 300 K. Although the power factor (PF) is very high along the x-axis (above 10 mW m-1K-2 at 300 K), such large kl dramatically reduces ZT. The maximum values of in-plane and cross-plane ZT are ~1 (n-type), 0.8 (p-type) and 0.6 (n-type), (0.2 p-type) at 700 K, respectively. The present study has revealed that this compound has strong potential in eco-friendly TE applications.

preprint2020arXiv

Improving the Optical and Thermoelectric Properties of Cs2InAgCl6 with Substitutional Doping: A DFT Insight

New generation Indium based lead-free Cs2InAgCl6 is a promising halide material in photovoltaic applications due to its good air stability and non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar spectrum and hence reducing the photoelectronic efficiency for device applications. Here we report a significant band gap reduction from 3.3 eV to 0.6 eV by substitutional doping and its effect on opto-electronic and opto-thermoelectric properties from first-principles study. The results predict that Sn/Pb and Ga & Cu co-doping enhance the density of states significantly near the valence band maximum (VBM) and thus reduce the band gap by shifting the VBM upward while the alkali-metals (K/Rb) slightly increase the band gap. A strong absorption peak near Shockley-Queisser limit is observed in co-doped case while in Sn/Pb-doped case, we notice a peak in the middle of the visible region of solar spectrum. The nature of band gap is indirect with Cu-Ga/Pb/Sn doping with a significant reduction in the band gap. We observe a significant increase in the power factor (PF) (2.03 mW/mK2) for n-type carrier in Pb-dpoing, which is ~3.5 times higher than the pristine case (0.6 mW/mK2) at 500 K.

preprint2020arXiv

Predicting Individual Substance Abuse Vulnerability using Machine Learning Techniques

Substance abuse is the unrestrained and detrimental use of psychoactive chemical substances, unauthorized drugs, and alcohol. Continuous use of these substances can ultimately lead a human to disastrous consequences. As patients display a high rate of relapse, prevention at an early stage can be an effective restraint. We therefore propose a binary classifier to identify any individual's present vulnerability towards substance abuse by analyzing subjects' socio-economic environment. We have collected data by a questionnaire which is created after carefully assessing the commonly involved factors behind substance abuse. Pearson's chi-squared test of independence is used to identify key feature variables influencing substance abuse. Later we build the predictive classifiers using machine learning classification algorithms on those variables. Logistic regression classifier trained with 18 features can predict individual vulnerability with the best accuracy.

preprint2019arXiv

First-principles prediction of extraordinary thermoelectric efficiency in superionic Li2SnX3(X=S,Se)

Thermoelectric materials create an electric potential when subject to a temperature gradient and vice versa hence they can be used to harvest waste heat into electricity and in thermal management applications. However, finding highly efficient thermoelectrics with high figures of merit, zT$\geq$1, is very challenging because the combination of high power factor and low thermal conductivity is rare in materials. Here, we use first-principles methods to analyze the thermoelectric properties of Li$_2$Sn$X_3$ ($X$=S,Se), a recently synthesized class of lithium fast-ion conductors presenting high thermal stability. In p-type Li$_2$Sn$X_3$, we estimate highly flat electronic valence bands that render high Seebeck coefficients exceeding 400 $μ$VK$^{-1}$ at 700K. In n-type Li$_2$Sn$X_3$, the electronic conduction bands are slightly dispersive however the accompanying weak electron-acoustic phonon scattering induces high electrical conductivity. The combination of high Seebeck coefficient and electrical conductivity gives rise to high power factors, reaching a maximum of 4 mWm$^{-1}$K$^{-2}$ in p-type Li$_2$SnS$_3$ and 8 mWm$^{-1}$K$^{-2}$ in n-type Li$_2$SnSe$_3$ at 300 K. Likewise, the thermal conductivity in Li$_2$Sn$X_3$ is low as compared to conventional thermoelectric materials, 2-5 Wm$^{-1}$K$^{-1}$ at room temperature. As a result, we estimate a maximum zT = 1.05 in p-type Li$_2$SnS$_3$ at 700 K and an extraordinary 3.07 (1.5) in n-type Li$_2$SnSe$_3$ at the same temperature (300 K). Our findings of huge zT in Li$_2$Sn$X_3$ suggest that lithium fast-ion conductors, typically employed as electrolytes in solid-state batteries, hold exceptional promise as thermoelectric materials.

preprint2018arXiv

DFT based study on structural stability and transport properties of Sr3AsN: A potential thermoelectric material

Antiperovskite materials are well known for their high thermoelectric performance and gained huge research interest. Here, we report the structural stability and transport properties of Sr$_3$AsN from a precise first-principles study. The calculated equilibrium lattice parameters are in a good agreement with the available data. We find that Sr$_3$AsN is a mechanically, energetically and dynamically stable at ambient condition. Our calculated electronic structure indicates that it is a direct bandgap semiconductor, with a value ~1.2 eV. Sr-4d and N-2p orbitals mainly formulate the direct bandgap. This antiperovskite possesses a high Seebeck coefficient. Although its lattice thermal conductivity is comparatively low, electronic thermal conductivity is very high. The calculated maximum TE figure of merit is 0.75 at 700 K, indicating that it is a potential material for thermoelectric applications.

preprint2018arXiv

First-principles prediction of phonon-mediated superconductivity in XBC (X= Mg, Ca, Sr, Ba)

From first-principles calculations, we predict four new intercalated hexagonal $X$BC ($X$=Mg, Ca, Sr, Ba) compounds to be dynamically stable and phonon-mediated superconductors. These compounds form a LiBC like structure but are metallic. The calculated superconducting critical temperature, $T{_c}$, of MgBC is 51 K. The strong attractive interaction between $σ$-bonding electrons and the B${_{1g}}$ phonon mode gives rise to a larger electron-phonon coupling constant (1.135) and hence high $T_c$; notably, higher than that of MgB$_2$. The other compounds have a low superconducting critical temperature (4-17 K) due to the interaction between $σ$-bonding electrons and low energy phonons (E${_{2u}}$ modes). Due to their energetic and dynamic stability, we envisage that these compounds can be synthesized experimentally.

preprint2018arXiv

High Seebeck coefficient and ultra-low lattice thermal conductivity in Cs2InAgCl6

The elastic, electronic and thermoelectric properties of indium-based double-perovskite halide, Cs2InAgCl6 have been studied by first principles study. The Cs2InAgCl6 is found to be elastically stable, ductile, anisotropic and relatively low hard material. The calculated direct bandgap 3.67 eV by TB-mBJ functional fairly agrees with the experimentally measured value 3.3 eV but PBE functional underestimates the bandgap by 1.483 eV. The relaxation time and lattice thermal conductivity have been calculated by using relaxation time approximation (RTA) within the supercell approach. The lattice thermal conductivity (\k{appa}l) is quite low (0.2 Wm-1K-1). The quite low phonon group velocity in the large weighted phase space, and high anharmonicity (large phonon scattering) are responsible for small \k{appa}l. The room temperature Seebeck coefficient is 199 μVK-1. Such high Seebeck coefficient arises from the combination of the flat conduction band and large bandgap. We obtain power factors at 300K by using PBE and TB-mBJ potentials are ~29 and ~31 mWm-1K-2, respectively and the corresponding thermoelectric figure of merit of Cs2BiAgCl6 are 0.71 and 0.72. However, the maximum ZT value obtained at 700K is ~0.74 by TB-mBJ potential. The obtained results implies that Cs2InAgCl6 is a promising material for thermoelectric device applications.