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Junyi Zhu

Junyi Zhu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scinlin.SIcond-mat.othercond-mat.str-elmath-phmath.MPphysics.comp-ph

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Published work

10 published item(s)

preprint2019arXiv

Carrier free long-range magnetism in Mo doped one quintuple layer Bi2Te3 and Sb2Te3

One of the keys to the realization of Quantum Anomalous Hall effect (QAHE) is long range ferromagnetism, which is only experimentally realized in Cr or V doped (Bi,Sb)2Te3 system. Both elements are 3d transition metals and 4d transition metals are found to be ineffective to produce long range ferromagnetism in Bi2Se3. Still, whether long range ferromagnetism can be realized by magnetic doping of 4d elements is an open question. Based on density functional theory calculations, we predict that long range ferromagnetism can be realized in Mo doped Bi2Te3 and Sb2Te3, which are semiconducting. The coupling strength is comparable with that of Cr doped Bi2Te3 and Sb2Te3. Therefore, Mo doped Bi2Te3 and Sb2Te3 or their alloys can be new systems to realize diluted magnetic semiconductors and QAHE.

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preprint2019arXiv

Intrinsic long range antiferromagnetic coupling in dilutely V doped CuInTe$_2$

Despite the various magnetic orders mediated by superexchange mechanism, the existence of a long range antiferromagnetic (AFM) coupling is unknown. Based on DFT calculations, we discovered an intrinsic long range AFM coupling in V doped CuInTe$_2$. The AFM coupling is mainly due to the $p-d$ coupling and electron redistribution along the interacting chains. The relatively small energy difference between $p$ and $d$ orbitals and the small energy difference between d orbitals of the dopants and that of stepping stone sites can enhance the stability of this AFM configuration. A multi-bands Hubbard model was proposed to provide fundamental understanding to the long range AFM coupling in chalcopyrite diluted magnetic semiconductors(DMS).

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preprint2016arXiv

Surfactant Antimony enhanced Indium incorporation on InGaN (000-1) surface: a DFT study

InGaN is an ideal alloy system for optoelectronic devices due its tunable band gap. Yet high-quality InGaN requires high In concentration, which is a challenging issue that limits its use in green-light LEDs and other devices. In this paper, we investigated the surfactant effect of Sb on the In incorporation on InGaN (000-1) surface via first-principles approaches. Surface phase diagram was also constructed to determine surface structures under different growth conditions. By analyzing surface stress under different structures, we found that Sb adatom can induce tensile sites in the cation layer, enhancing the In incorporation. These fi ndings may provide fundamental understandings and guidelines for the growth of InGaN with high In concentration.

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preprint2015arXiv

Dressing by regularization to the Gerdjikov-Ivanov equation and the higher-order soliton

Higher-order solitons, as well as simple $N$-soliton solutions, of the Gerdjikov-Ivanov equation are derived by the dressing method based on the technique of regularization. By the dressing transformation for the eigenfunction associated with a seed solution, the regularity conditions of the dressed eigenfunctions are found to establish the relationship between the potential and the scattering data.

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preprint2015arXiv

Realization of Stable Ferromagnetic Order in Topological Insulator: Codoping Enhanced Magnetism in 4f Transition Metal Doped Bi2Se3

The realization of long range and insulating ferromagnetic states in topological insulator (TI) has been a pressing issue since its discovery. Only recently, such state was achieved in Cr-doped Bi2-xSbxTe3, leading to the discovery of quantum anomalous Hall effect (QAHE). However, the effect is only observed at extremely low temperatures mainly due to the limited magnetism. To fully understand the mechanism of the ferromagnetic ordering whereby improving the ferromagnetism, we investigated 4f transition metal-doped Bi2Se3, using density-functional-theory approaches. We found that Eu and Sm prefer the Bi substitutional sites with large magnetic moments to ensure stable long-range ferromagnetic states. Additionally, codoping can be a novel strategy to preserve the insulating property of the host material as well as improving the incorporation of magnetic dopants. Our findings thus offer the critical step in facilitating the realization of QAHE in TI systems.

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preprint2015arXiv

Surface energy calculations from Zinc blende (111)/(-1-1-1) to Wurtzite (0001)/(000-1):a study of ZnO and GaN

The accurate absolute surface energies of (0001)/(000-1) surfaces of wurtzite structures are crucial in determining the thin film growth mode of important energy materials. However, the surface energies still remain to be solved due to the intrinsic difficulty of calculating dangling bond energy of asymmetrically bonded surface atoms. In this study, we used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN. The calculations were based on the pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules, using density functional theory approaches. And the surface energies of (0001)/(000-1) surfaces of wurtzite ZnO and GaN we obtained showed relatively high self-consistencies. A wedge structure calculation with a new bottom surface passivation scheme of group I and group VII elements was also proposed and performed to show converged absolute surface energy of wurtzite ZnO polar surfaces, and the result were also compared with the above method. These calculations and comparisons may provide important insights to crystal growths of the above materials, thereby leading to significant performance enhancements of semiconductor devices.

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preprint2014arXiv

The discrete mKdV equation revisited: a Riemann-Hilbert approach

We study the plus and minus type discrete mKdV equation. Some different symmetry conditions associated with two Lax pairs are introduced to derive the matrix Riemann-Hilbert problem with zero. By virtue of regularization of the Riemann-Hilbert problem, we obtain the complex and real solution to the plus type discrete mKdV equation respectively. Under the gauge transformation between the plus and minus type, the solutions of minus type can be obtained in terms of the given plus ones.

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preprint2011arXiv

Quantum Stress: Density Functional Theory Formulation and Physical Manifestation

The concept of "quantum stress (QS)" is introduced and formulated within density functional theory (DFT), to elucidate extrinsic electronic effects on the stress state of solids and thin films in the absence of lattice strain. A formal expression of QS (σ^Q) is derived in relation to deformation potential of electronic states (Ξ) and variation of electron density (Δn), σ^Q = ΞΔn, as a quantum analog of classical Hook's law. Two distinct QS manifestations are demonstrated quantitatively by DFT calculations: (1) in the form of bulk stress induced by charge carriers; and (2) in the form of surface stress induced by quantum confinement. Implications of QS in some physical phenomena are discussed to underlie its importance.

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