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Researcher profile

Bei Deng

Bei Deng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

3 published item(s)

preprint2022arXiv

Parity-breaking in single-element phases: Ferroelectric-like elemental polar metals

Polar metals based on binary and ternary compounds have been demonstrated in literature. Here, we propose a design principle for ferroelectric-like elemental polar metals and relate it to real materials. The design principle is that, to be an elemental polar metal, atoms should occupy at least two inequivalent Wyckoff positions in a crystal with a polar space group, where inversion symmetry is spontaneously broken. According to this rule, we propose the first class of potential ferroelectric-like elemental polar metals in a distorted α-La-like structure with a polar space group P63mc in which two inequivalent Wyckoff positions 2a (0, 0, z) and 2b (1/3, 2/3, z) are occupied by group-V elements (phosphorus, arsenic, antimony, and bismuth). Analyses based on first-principles calculations indicate that the dynamically stable polar phase results from a lone pair driven polar distortion of the nonploar phase in P63/mmc symmetry where two inequivalent Wyckoff positions 2a (0, 0, 0) and 2c (1/3, 2/3, 1/4) are occupied. This ferroelectric-like transition involves a transition from a metallic state to a semimetallic state. These predicted polar phases are metastable with respect to their corresponding ground phases. Moreover, ionic bonding characters are found due to the inequivalence in Wyckoff positions between group-V atoms. Our work opens a route to single-element parity-breaking phases.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Realization of Stable Ferromagnetic Order in Topological Insulator: Codoping Enhanced Magnetism in 4f Transition Metal Doped Bi2Se3

The realization of long range and insulating ferromagnetic states in topological insulator (TI) has been a pressing issue since its discovery. Only recently, such state was achieved in Cr-doped Bi2-xSbxTe3, leading to the discovery of quantum anomalous Hall effect (QAHE). However, the effect is only observed at extremely low temperatures mainly due to the limited magnetism. To fully understand the mechanism of the ferromagnetic ordering whereby improving the ferromagnetism, we investigated 4f transition metal-doped Bi2Se3, using density-functional-theory approaches. We found that Eu and Sm prefer the Bi substitutional sites with large magnetic moments to ensure stable long-range ferromagnetic states. Additionally, codoping can be a novel strategy to preserve the insulating property of the host material as well as improving the incorporation of magnetic dopants. Our findings thus offer the critical step in facilitating the realization of QAHE in TI systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Surface energy calculations from Zinc blende (111)/(-1-1-1) to Wurtzite (0001)/(000-1):a study of ZnO and GaN

The accurate absolute surface energies of (0001)/(000-1) surfaces of wurtzite structures are crucial in determining the thin film growth mode of important energy materials. However, the surface energies still remain to be solved due to the intrinsic difficulty of calculating dangling bond energy of asymmetrically bonded surface atoms. In this study, we used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN. The calculations were based on the pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules, using density functional theory approaches. And the surface energies of (0001)/(000-1) surfaces of wurtzite ZnO and GaN we obtained showed relatively high self-consistencies. A wedge structure calculation with a new bottom surface passivation scheme of group I and group VII elements was also proposed and performed to show converged absolute surface energy of wurtzite ZnO polar surfaces, and the result were also compared with the above method. These calculations and comparisons may provide important insights to crystal growths of the above materials, thereby leading to significant performance enhancements of semiconductor devices.

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