Researcher profile

Junsong Wang

Junsong Wang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Automatic low-bit hybrid quantization of neural networks through meta learning

Model quantization is a widely used technique to compress and accelerate deep neural network (DNN) inference, especially when deploying to edge or IoT devices with limited computation capacity and power consumption budget. The uniform bit width quantization across all the layers is usually sub-optimal and the exploration of hybrid quantization for different layers is vital for efficient deep compression. In this paper, we employ the meta learning method to automatically realize low-bit hybrid quantization of neural networks. A MetaQuantNet, together with a Quantization function, are trained to generate the quantized weights for the target DNN. Then, we apply a genetic algorithm to search the best hybrid quantization policy that meets compression constraints. With the best searched quantization policy, we subsequently retrain or finetune to further improve the performance of the quantized target network. Extensive experiments demonstrate the performance of searched hybrid quantization scheme surpass that of uniform bitwidth counterpart. Compared to the existing reinforcement learning (RL) based hybrid quantization search approach that relies on tedious explorations, our meta learning approach is more efficient and effective for any compression requirements since the MetaQuantNet only needs be trained once.

preprint2020arXiv

Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.