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Jun-Fang Liu

Jun-Fang Liu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2015arXiv

Magnetic-field-assisted electron confinement and valley splitting in strained graphene

Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to the step edges of Cu(111), obtained by using thermal strain engineering3,4. We study these strained structures with sub-nanometre-resolved scanning tunnelling microscopy and spectroscopy and identify their spatially modulated Dirac points, demonstrating the effect of overlap of Cu and graphene wave functions on the charge transfer between them5. By applying a magnetic field of 8 Tesla, electron confinement, as revealed by regularly spaced sharp resonances6,7, is observed in the strained graphene. In some regions of the strained graphene, repetitive pairs of resonance peaks appear in the tunnelling spectra. This provides direct and compelling evidence for lifting of valley degeneracy due to the coexistence of both the magnetic field and the pseudomagnetic field.

preprint2014arXiv

Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and graphene. The flatness of these substrates substantially decreases the C8-BTBT nucleation density and enables repeatable growth of large-area single crystal of the C8-BTBT monolayer. Our experimental result indicates that only out-of-plane roughness greater than 0.6 nm of the substrates could induce disturbance in the crystal growth and consequently affect the charge transport. This information would be important in guiding the growth of high-quality epitaxy molecular film.