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Bing Wu

Bing Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciComputer Visioncond-mat.str-elcond-mat.supr-coneess.IVhep-phMachine Learningnucl-th

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Published work

8 published item(s)

preprint2026arXiv

Effective Range Expansion with the Left-Hand Cut: Higher Order Improvements

A model-independent parameterization of the low-energy scattering amplitude that incorporates the left-hand cut from one-particle exchange, an extension of the conventional effective-range expansion (ERE), was recently proposed and successfully applied to the low-energy $DD^*$ system [Phys. Rev. Lett. 135, 011903 (2025)]. While the original formulation is based on a nonrelativistic approximation and is thus limited to a [1,1] approximant for self-consistency, we extend the framework by explicitly including the higher-order terms up to $\mathcal{O}(k^6)$. We systematically investigate the reliability and robustness of the generalized ERE by incorporating relativistic kinematic effects. In addition, we develop a relativistic version of the ERE that accounts for lhc contributions. These results affirm the generalized ERE as a robust and systematically improvable framework for near-threshold scattering processes, providing both analytical and numerical reliability for applications in two-body scattering problems with a particle exchange.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Van der Waals CrSBr alloys with tunable magnetic and optical properties

Van der Waals magnets are attracting a lot of attention for their potential integration in spintronic and magnonic technologies. CrSBr is an A-type antiferromagnet that shows a coupling between its electronic band structure and magnetic properties. This property is appealing for applications and it also offers the possibility to investigate magnetic ground states and GHz magnons using visible optics techniques. Using Raman scattering and (magneto)-optical experiments, we describe the magnetic and optical properties of alloys of CrSBr$_{(1-x)}$Cl$_x$ with $x<0.46$. Similar to CrSBr, these alloys are direct band gap semiconductors with a coupling of their electronic and magnetic properties. Exciton energies evolve weakly with composition and we describe the large changes in the saturation magnetic fields and their implications on the magnetic properties. We show that both the interlayer magnetic exchange and electronic interactions are modified by the halogen mixing, offering the possibility to tune magnon energies with alloy composition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Adversarial Code Learning for Image Generation

We introduce the "adversarial code learning" (ACL) module that improves overall image generation performance to several types of deep models. Instead of performing a posterior distribution modeling in the pixel spaces of generators, ACLs aim to jointly learn a latent code with another image encoder/inference net, with a prior noise as its input. We conduct the learning in an adversarial learning process, which bears a close resemblance to the original GAN but again shifts the learning from image spaces to prior and latent code spaces. ACL is a portable module that brings up much more flexibility and possibilities in generative model designs. First, it allows flexibility to convert non-generative models like Autoencoders and standard classification models to decent generative models. Second, it enhances existing GANs' performance by generating meaningful codes and images from any part of the prior. We have incorporated our ACL module with the aforementioned frameworks and have performed experiments on synthetic, MNIST, CIFAR-10, and CelebA datasets. Our models have achieved significant improvements which demonstrated the generality for image generation tasks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered mono- to tetra-layer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to band-like in subsequent layers. Such abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ~3nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

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preprint2015arXiv

A van der Waals pn heterojunction with organic/inorganic semiconductors

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

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preprint2014arXiv

Investigation of the magnetic dipole field at the atomic scale in quasi-one-dimensional paramagnetic conductor Li$_{0.9}$Mo$_{6}$O$_{17}$

We report magnetic dipole field investigation at the atomic scale in a single crystal of quasi-one-dimensional (Q1D) paramagnetic conductor Li$_{0.9}$Mo$_{6}$O$_{17}$, using a paramagnetic electron model and $^{7}$Li-NMR spectroscopy measurements with an externally applied magnetic field $B_{0}$ = 9 T. We find that the magnetic dipole field component ($B_{||}^{\text{dip}}$) parallel to $B_{0}$ at the Li site from the Mo electrons has no lattice axial symmetry; it is small around the middle between the lattice $c$ and $a$ axes in the $ac$-plane with the minimum at the field orientation angle $θ$ = +52.5$^{\circ}$, while the $B_{||}^{\text{dip}}$ maximum is at $θ$ = +142.5$^{\circ}$ when $B_{0}$ is applied perpendicular to $b$ ($B_{0}$ $\perp$ $b$), where $θ$ = 0$^{\circ}$ represents the direction of $B_{0}$ $\parallel$ $c$. Further estimate indicates that $B_{||}^{\text{dip}}$ has a maximum value of 0.35 G at $B_{0}$ = 9 T, and the Mo ions have a possible effective magnetic dipole moment 0.015 $μ_{\text{B}}$ per ion, which is significantly smaller than that of a spin 1/2 free electron. By minimizing potential magnetic contributions to the NMR spectrum satellites with the NMR spectroscopy measurements at the direction where the value of the magnetic dipole field is the smallest, the behavior of the independent charge contributions is observed. This work demonstrates that the magnetic dipole field from the Mo electrons is the dominant source of the local magnetic fields at the Li site, and it suggests that the mysterious "metal-insulator" crossover at low temperatures is not a charge effect. The work also reveals valuable local field information for further NMR investigation which is suggested recently [Phys. Rev. B $\bf{85}$, 235128 (2012)] to be key important to the understanding of many mysterious properties of this Q1D material of particular interest.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Superconducting anisotropy in the electron-doped high-T$_{c}$ superconductors Pr$_{2-x}$Ce$_{x}$CuO$_{4-y}$

We report superconducting anisotropy measurements in the electron-doped high-$T_{c}$ superconductors (HTSCs) Pr$_{2-x}$Ce$_{x}$CuO$_{4-y}$ (PCCO, $x$ = 0.15 and 0.17) with applied magnetic field ($H_{0}$) up to 28 T. Our results show that the upper critical field [$H_{c2}(T)$] is highly anisotropic, and as temperature $T$ $\rightarrow$ 0 the value of it at $H_{0}$ $\parallel$ $c$ [$H_{c2,\parallel c}$(0)] is far less than the Pauli limit, which is very different from that at $H_{0}$ $\perp$ $c$. The $H_{c2}(0)$ character along with the evaluated zero $T$ coherence length $[ξ_{ab(c)}(0)]$ and penetration depth $[λ_{ab(c)}(0)]$ is compared with those of the hole-doped cuprate HTSCs and typical Fe-based superconductors. We find that the low temperature anisotropic character of PCCO is rather similar to that of hole-doped cuprate HTSCs, but apparently larger than that of typical Fe-based superconductors. This study also proves a new sensitive probe of detecting rich properties of unconventional superconductors with the use of the resonant frequency of a NMR probe circuit.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and graphene. The flatness of these substrates substantially decreases the C8-BTBT nucleation density and enables repeatable growth of large-area single crystal of the C8-BTBT monolayer. Our experimental result indicates that only out-of-plane roughness greater than 0.6 nm of the substrates could induce disturbance in the crystal growth and consequently affect the charge transport. This information would be important in guiding the growth of high-quality epitaxy molecular film.

0 citations0 reviewsNo code linkedOpen access