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Researcher profile

Julie Karel

Julie Karel contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2022arXiv

Hot 2DHG states in tellurium

Element semiconductor Te is very popular in both fundamental electronic structure study, and device fabrication research area due to its unique band structure. Specifically, in low temperatures, Te possesses strong quantum oscillations with magnetic field applied in basal plane, either following Shubnikov-de Haas (SdH) oscillation rule or following log-periodic oscillation rule. With magnetic field applied along the [001] direction, the SdH oscillations are attributed to the two-dimensional hole gas (2DHG) surface states. Here we reported an interesting SdH oscillation in Te-based single crystals, with the magnetic field applied along the [001] direction of the crystals, showing the maximum oscillation intensity at ~ 75 K, and still traceable at 200 K, which indicates a rather hot 2DHG state. The nontrivial Berry phase can be also obtained from the oscillations, implying the contribution from topological states. More importantly, the high temperature SdH oscillation phenomena are observed in different Te single crystals samples, and Te single crystals with nonmagnetic/magnetic dopants, showing robustness to bulk defects. Therefore, the oscillation may be contributed by the bulk symmetry protected hot 2DHG states, which will offer a new platform for high-temperature quantum transport studies.

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preprint2022arXiv

Increased Phase Coherence Length in a Porous Topological Insulator

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.

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preprint2020arXiv

Spin-orbit torque generated by amorphous Fe$_{x}$Si$_{1-x}$

While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of bulk lattice inversion symmetry breaking. Here we report the observation of spin-orbit torque in an amorphous, non-ferromagnetic Fe$_{x}$Si$_{1-x}$ / cobalt bilayer at room temperature, using spin torque ferromagnetic resonance and harmonic Hall measurements. Both techniques provide a minimum spin torque efficiency of about 3 %, comparable to prototypical heavy metals such as Pt or Ta. According to the conventional theory of the spin Hall effect, a spin current in an amorphous material is not expected to have any substantial contribution from the electronic bandstructure. This, combined with the fact that Fe$_{x}$Si$_{1-x}$ does not contain any high-Z element, paves a new avenue for understanding the underlying physics of spin-orbit interaction and opens up a new class of material systems - silicides - that is directly compatible with complementary metal-oxide-semiconductor (CMOS) processes for integrated spintronics applications.

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