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Julie A. Borchers

Julie A. Borchers appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.softcond-mat.str-el

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Published work

9 published item(s)

preprint2022arXiv

Chiral Spin Bobbers in Exchange-Coupled Hard-Soft Magnetic Bilayers

The spin structure of exchange-coupled MnBi:Co-Fe bilayers is investigated by X-ray magnetic circular dichroism (XMCD), polarized neutron reflectometry (PNR), and micromagnetic simu-lations. The purpose of the present research is two-fold. First, the current search for new permanent-magnet materials includes hard-soft nanocomposites, and the analysis of coercivity mechanisms in these structures is an important aspect of this quest. Second, topological micro-magnetic structures such as skyrmions have recently become of intense fundamental and applied research, for example in the context of spin-based electronics. We find that the magnetization reversal of the MnBi:Co-Fe bilayer structure involves a curling-type twisting of the magnetization in the film plane. This curling in the exchange-coupled hard-soft magnetic bilayers is reminiscent of chiral spin structures known as bobbers and, in fact, establishes a new type of skyrmionic spin structure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Layering of magnetic nanoparticles at amorphous magnetic templates with perpendicular anisotropy

We reveal the assembly of monodisperse magnetite nanoparticles of sizes 5 nm, 15 nm and 25 nm from dilute water-based ferrofluids onto an amorphous magnetic template with out-of-plane anisotropy. From neutron reflectometry experiments we extract density profiles and show that the particles self-assemble into layers at the magnetic surface. The layers are extremely stable against cleaning and rinsing of the substrate. The density of the layers is determined by and increases with the remanent magnetic moment of the particles.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ferromagnetic van der Waals compound MnSb$_{1.8}$Bi$_{0.2}$Te$_4$

The intersection of topology and magnetism represents a new playground to discover novel quantum phenomena and device concepts. In this work, we show that a van der Waals compound MnSb$_{1.8}$Bi$_{0.2}$Te$_4$ exhibits a ferromagnetic ground state with a Curie temperature of 26 K, in contrast to the antiferromagnetic order previously found for other members of the Mn(Sb, Bi)$_2$Te$_4$ family. We employ magneto-transport, bulk magnetization and neutron scattering studies to illustrate the magnetic and electrical properties of MnSb$_{1.8}$Bi$_{0.2}$Te$_4$ and report on the observation of an unusual anomalous Hall effect. Our results are an important step in the synthesis and understanding of ferromagnetic topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Interfacial-Redox-Induced Tuning of Superconductivity in YBa$_{2}$Cu$_{3}$O$_{7-δ}$

Solid state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here we report a simple, scalable approach allowing for total control of the superconducting transition in optimally doped YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (YBCO) films via a chemically-driven ionic migration mechanism. Using a thin Gd capping layer of up to 20 nm deposited onto 100 nm thick epitaxial YBCO films, oxygen is found to leach from deep within the YBCO. Progressive reduction of the superconducting transition is observed, with complete suppression possible for a sufficiently thick Gd layer. These effects arise from the combined impact of redox-driven electron doping and modification of the YBCO microstructure due to oxygen migration and depletion. This work demonstrates an effective ionic control of superconductivity in oxides, an interface induced effect that goes well into the quasi-bulk regime, opening up possibilities for electric field manipulation.

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preprint2016arXiv

Beyond the Interface Limit: Structural and Magnetic Depth Profiles of Voltage-Controlled Magneto-Ionic Heterostructures

Electric-field control of magnetism provides a promising route towards ultralow power information storage and sensor technologies. The effects of magneto-ionic motion have so far been prominently featured in the direct modification of interface chemical and physical characteristics. Here we demonstrate magnetoelectric coupling moderated by voltage-driven oxygen migration beyond the interface limit in relatively thick AlOx/GdOx/Co (15 nm) films. Oxygen migration and its ramifications on the Co magnetization are quantitatively mapped with polarized neutron reflectometry under thermal and electro-thermal conditionings. The depth-resolved profiles uniquely identify interfacial and bulk behaviors and a semi-reversible suppression and recovery of the magnetization. Magnetometry measurements show that the conditioning changes the microstructure so as to disrupt long-range ferromagnetic ordering, resulting in an additional magnetically soft phase. X-ray spectroscopy confirms electric field induced changes in the Co oxidation state but not in the Gd, suggesting that the GdOx transmits oxygen but does not source or sink it. These results together provide crucial insight into controlling magnetic heterostructures via magneto-ionic motion, not only at the interface, but also throughout the bulk of the films.

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preprint2016arXiv

Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures

Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topological surface massive Dirac fermions. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

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preprint2014arXiv

Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films

We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetization measurements reveal the onset of ferromagnetism with a Curie temperature in the range 13.8 K - 17 K in films with 2 % - 10 % Mn concentration. Magnetization hysteresis loops reveal that the magnetic easy axis is along the c-axis of the crystal (perpendicular to the plane). Polarized neutron reflectivity measurements of a 68 nm-thick sample show that the magnetization is uniform through the film. The presence of ferromagnetism is also manifest in a strong anomalous Hall effect and a hysteretic magnetoresistance arising from domain wall scattering. Ordinary Hall effect measurements show that the carrier density is n-type, increases with Mn doping, and is high enough (> 2.8 x 10^{13} cm^{-2}) to place the chemical potential in the conduction band. Thus, the observed ferromagnetism is likely associated with both bulk and surface states. Surprisingly, the Curie temperature does not show any clear dependence on the carrier density but does increase with Mn concentration. Our results suggest that the ferromagnetism probed in these Mn-doped Bi2Te3 films is not mediated by carriers in the conduction band or in an impurity band.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetic Structure and Ordering of Multiferroic Hexagonal LuFeO3

We report on the magnetic structure and ordering of hexagonal LuFeO3 films grown by molecular-beam epitaxy (MBE) on YSZ (111) and Al2O3 (0001) substrates. Using a set of complementary probes including neutron diffraction, we find that the system magnetically orders into a ferromagnetically-canted antiferromagnetic state via a single transition between 138-155 K, while a paraelectric to ferroelectric transition occurs above 1000 K. The symmetry of the magnetic structure in the ferroelectric state implies that this material is a strong candidate for linear magnetoelectric coupling and control of the ferromagnetic moment directly by an electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures

We have studied magnetotransport in organic-inorganic hybrid multilayer junctions. In these devices, the organic semiconductor (OSC) Alq$_3$ (tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic (FM) Co and Fe layers. The thickness of the Alq$_3$ layer was in the range of 50-150 nm. Positive magnetoresistance (MR) was observed at 4.2 K in a current perpendicular to plane geometry, and these effects persisted up to room temperature. The devices' microstructure was studied by X-ray reflectometry, Auger electron spectroscopy and polarized neutron reflectometry (PNR). The films show well-defined layers with modest average chemical roughness (3-5 nm) at the interface between the Alq$_3$ and the surrounding FM layers. Reflectometry shows that larger MR effects are associated with smaller FM/Alq$_3$ interface width (both chemical and magnetic) and a magnetically dead layer at the Alq$_3$/Fe interface. The PNR data also show that the Co layer, which was deposited on top of the Alq$_3$, adopts a multi-domain magnetic structure at low field and a perfect anti-parallel state is not obtained. The origins of the observed MR are discussed and attributed to spin coherent transport. A lower bound for the spin diffusion length in Alq$_3$ was estimated as $43 \pm 5$ nm at 80 K. However, the subtle correlations between microstructure and magnetotransport indicate the importance of interfacial effects in these systems.

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