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Juan J. Meléndez

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cond-mat.mtrl-sci physics.comp-ph quant-ph

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preprint2020arXiv

Investigating charge carrier scattering processes in anisotropic semiconductors through first-principles calculations: The case of p-type SnSe

Efficient ab initio computational methods for the calculation of thermoelectric transport properties of materials are of great avail for energy harvesting technologies. The BoltzTraP code has been largely used to efficiently calculate thermoelectric coefficients. However, its current version that is publicly available is based only on the constant relaxation time (RT) approximation, which usually does not hold for real materials. Here, we extended the implementation of the BoltzTraP code by incorporating realistic k-dependent RT models of the temperature dependence of the main scattering processes, namely, screened polar and nonpolar scattering by optical phonons, scattering by acoustic phonons, and scattering by ionized impurities with screening. Our RT models are based on a smooth Fourier interpolation of Kohn-Sham eigenvalues and its derivatives, taking into account non-parabolicity (beyond the parabolic or Kane models), degeneracy and multiplicity of the energy bands on the same footing, within very low computational cost. In order to test our methodology, we calculated the anisotropic thermoelectric transport properties of low temperature phase (Pnma) of intrinsic p-type and hole-doped tin selenide (SnSe). Our results are in quantitative agreement with experimental data, regarding the evolution of the anisotropic thermoelectric coefficients with both temperature and chemical potential. Hence, from this picture, we also obtained the evolution and understanding of the main scattering processes of the overall thermoelectric transport in p-type SnSe.

preprint2016arXiv

$zT$-factor enhancement in SnSe: predictions from first principles calculations

The electronic structure and thermoelectric properties of SnSe are studied by first-principles methods. The inclusion of van der Waals dispersive corrections improves the agreement of structural parameters with experiments. The bands structure and projected density of states justify the macroscopic anisotropy exhibited by this system. An original methodology is used to estimate the chemical potential and the relaxation time for the electrical and thermal conductivities. Following this methodology, the Seebeck coefficient and thermal conductivity for single crystals and polycrystals are described in good agreement with experimental data. As for the electrical conductivity, values calculated with a temperature-dependent relaxation time compare well with available measurements, especially for single crystals, polycrystals are better described by a constant relaxation time. Finally, the figure of merit of SnSe single crystals and polycrystals is calculated. It is found to exhibit a maximum for some "ideal" carrier concentration, and might be noticeably enhanced by using carrier concentrations higher than the experimental ones. From these findings, possible strategies to increase the figure of merit in practise are suggested.

preprint2016arXiv

Numerical matrix method for quantum periodic potentials

A numerical matrix methodology is applied to quantum problems with periodic potentials. The procedure consists essentially in replacing the true potential by an alternative one, restricted by an infinite square well, and in expressing the wave functions as finite superpositions of eigenfunctions of the infinite well. A matrix eigenvalue equation then yields the energy levels of the periodic potential within an acceptable accuracy. The methodology has been successfully used to deal with problems based on the well-known Kronig-Penney (KP) model. Besides the original model, these problems are a dimerized KP solid, a KP solid containing a surface, and a KP solid under an external field. A short list of additional problems that can be solved with this procedure is presented.

preprint2015arXiv

In2O3 doped with hydrogen: electronic structure and optical properties from the pseudopotential Self-Interaction Corrected Density Functional Theory and the Random Phase Approximation

We discuss the applicability of the pseudopotential-like self-interaction correction (pSIC) to the study of defect energetics and electronic structure of In2O3. Our results predict that substitutional (at oxygen sites) and interstitial (at antibonding positions) hydrogen, as well as oxygen vacancies with charges +1 and +2, are stable configurations of defects in cubic In2O3; the former form shallow levels (only as substitutional defects), whereas the latter form deep levels. The band structure calculated with the pSIC shows an excellent agreement with experimental data. In particular, the gap for defect-free In2O3 is 2.85 eV, which compares fairly with the experimental range 2.3-2.9 eV. The pSIC results also point to a change from indirect to direct gaps depending on doping. In relation to the optical properties, obtained within the random phase approximation, it is shown that they are mostly affected by the presence of oxygen vacancies.