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Małgorzata Wierzbowska

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cond-mat.mtrl-sci physics.comp-ph

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preprint2020arXiv

MoS2 thin-film transistors spin-states, of conduction electrons and vacancies, distinguished by operando electron spin resonance

Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degree of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and vacancies have not been yet elucidated directly from a microscopic viewpoint. We report the spin-states in thin-film electric double-layer transistors using operando electron spin resonance (ESR) spectroscopy. We have observed clearly different ESR signals of the conduction electrons and vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates the lower charge mobilities compared to graphene, which would be useful for improvements of the device characteristics and new applications.

preprint2019arXiv

Wannier90 as a community code: new features and applications

Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials.

preprint2015arXiv

In2O3 doped with hydrogen: electronic structure and optical properties from the pseudopotential Self-Interaction Corrected Density Functional Theory and the Random Phase Approximation

We discuss the applicability of the pseudopotential-like self-interaction correction (pSIC) to the study of defect energetics and electronic structure of In2O3. Our results predict that substitutional (at oxygen sites) and interstitial (at antibonding positions) hydrogen, as well as oxygen vacancies with charges +1 and +2, are stable configurations of defects in cubic In2O3; the former form shallow levels (only as substitutional defects), whereas the latter form deep levels. The band structure calculated with the pSIC shows an excellent agreement with experimental data. In particular, the gap for defect-free In2O3 is 2.85 eV, which compares fairly with the experimental range 2.3-2.9 eV. The pSIC results also point to a change from indirect to direct gaps depending on doping. In relation to the optical properties, obtained within the random phase approximation, it is shown that they are mostly affected by the presence of oxygen vacancies.