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Alex Antonelli

Alex Antonelli appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.softphysics.comp-phcond-mat.stat-mech

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Published work

7 published item(s)

preprint2022arXiv

Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe

The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using extensive first-principles calculations of the hole-phonon and hole-impurity scattering, we investigate the thermoelectric transport properties of the orthorhombic phase of p-doped GeSe. We predict outstanding thermoelectric performance for GeSe over a broad range of temperatures due to its high Seebeck coefficients, extremely low Lorenz numbers, ultralow total thermal conductivity, and relatively large band gap. In particular, the out-of-plane direction in GeSe presents equivalent or even higher performance than SnSe for temperatures above 500 K. By extending the analysis to 900 K, we obtained an ultrahigh value for the thermoelectric figure of merit (zT = 3.2) at the optimal hole density of 4x10^19 cm^-3. Our work provides strong motivation for continued experimental work focusing on improving the GeSe doping efficiency in order to achieve this optimal hole density.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Boosting the efficiency of ab initio electron-phonon coupling calculations through dual interpolation

The coupling between electrons and phonons in solids plays a central role in describing many phenomena, including superconductivity and thermoelecric transport. Calculations of this coupling are exceedingly demanding as they necessitate integrations over both the electron and phonon momenta, both of which span the Brillouin zone of the crystal, independently. We present here an ab initio method for efficiently calculating electron-phonon mediated transport properties by dramatically accelerating the computation of the double integrals with a dual interpolation technique that combines maximally localized Wannier functions with symmetry-adapted plane waves. The performance gain in relation to the current state-of-the-art Wannier-Fourier interpolation is approximately 2n_s \times M, where n_s is the number of crystal symmetry operations and M, a number in the range 5 - 60, governs the expansion in star functions. We demonstrate with several examples how our method performs some ab initio calculations involving electron-phonon interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Investigating charge carrier scattering processes in anisotropic semiconductors through first-principles calculations: The case of p-type SnSe

Efficient ab initio computational methods for the calculation of thermoelectric transport properties of materials are of great avail for energy harvesting technologies. The BoltzTraP code has been largely used to efficiently calculate thermoelectric coefficients. However, its current version that is publicly available is based only on the constant relaxation time (RT) approximation, which usually does not hold for real materials. Here, we extended the implementation of the BoltzTraP code by incorporating realistic k-dependent RT models of the temperature dependence of the main scattering processes, namely, screened polar and nonpolar scattering by optical phonons, scattering by acoustic phonons, and scattering by ionized impurities with screening. Our RT models are based on a smooth Fourier interpolation of Kohn-Sham eigenvalues and its derivatives, taking into account non-parabolicity (beyond the parabolic or Kane models), degeneracy and multiplicity of the energy bands on the same footing, within very low computational cost. In order to test our methodology, we calculated the anisotropic thermoelectric transport properties of low temperature phase (Pnma) of intrinsic p-type and hole-doped tin selenide (SnSe). Our results are in quantitative agreement with experimental data, regarding the evolution of the anisotropic thermoelectric coefficients with both temperature and chemical potential. Hence, from this picture, we also obtained the evolution and understanding of the main scattering processes of the overall thermoelectric transport in p-type SnSe.

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preprint2020arXiv

Splitting up entropy into vibrational and configurational contributions in bulk metallic glasses: A thermodynamic approach

We applied an efficient methodology to separate vibrational and configurational entropies in bulk metallic glasses by means of molecular dynamics simulation based on a combination of non-equilibrium adiabatic switching and reversible scaling methods. This approach involves calculating the vibrational free energy using the Einstein crystal as a reference for the solid phase and the recently proposed Uhlenbeck-Ford model for the fluid phase. This methodology has the advantage that it does not require a crystalline solid phase for separating the entropies. Therefore, in principle, it is applicable to any material, regardless of whether or not it has a crystalline phase. Using this methodology, we separate the vibrational and configurational entropies of two metallic glasses with different fragilities at zero external pressure, namely, Cu$_{50}$Zr$_{50}$ and Cu$_{46}$Zr$_{46}$Al$_{8}$. We find that the results for the former alloy are in quite reasonable agreement with recent experimental work by Smith \textit{et al.}[H. L. Smith \textit{et al.}, Nat. Phys. \textbf{13}, 900 (2017)]. We also find the configurational entropy of the glass containing Al to be 70\% larger than that of the other glass. Our results suggest that, although other factors may be at play, the configurational entropy can be used to investigate the effect of the addition of a minor-alloying element on the glass-forming ability of bulk metallic glasses.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

$zT$-factor enhancement in SnSe: predictions from first principles calculations

The electronic structure and thermoelectric properties of SnSe are studied by first-principles methods. The inclusion of van der Waals dispersive corrections improves the agreement of structural parameters with experiments. The bands structure and projected density of states justify the macroscopic anisotropy exhibited by this system. An original methodology is used to estimate the chemical potential and the relaxation time for the electrical and thermal conductivities. Following this methodology, the Seebeck coefficient and thermal conductivity for single crystals and polycrystals are described in good agreement with experimental data. As for the electrical conductivity, values calculated with a temperature-dependent relaxation time compare well with available measurements, especially for single crystals, polycrystals are better described by a constant relaxation time. Finally, the figure of merit of SnSe single crystals and polycrystals is calculated. It is found to exhibit a maximum for some "ideal" carrier concentration, and might be noticeably enhanced by using carrier concentrations higher than the experimental ones. From these findings, possible strategies to increase the figure of merit in practise are suggested.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Revisiting Dynamics Near a Liquid-Liquid Phase Transition in Si and Ga: The Fragile-to-Strong Transition

Using molecular dynamics simulations we analyze the dynamics of two atomic liquids that display a liquid-liquid phase transition (LLPT): Si described by the Stillinger-Weber potential and Ga as modeled by the modified embedded-atom model (MEAM). In particular, our objective is to investigate the extent to which the presence of a dip in the self-intermediate scattering function is a manifestation of an excess of vibrational states at low frequencies and may be associated with a fragile-to-strong transition (FTST) across the LLPT, as suggested recently. Our results do not lend support to these suggestions. Specifically, in the case of Ga we observe the appearance of an excess of vibrational states at low frequencies, even in the absence of the appearance of a dip in the self-intermediate scattering function across the LLPT. Furthermore, studying the behavior of the shear viscosities traversing the LLPTs we find that, despite the development of a dip in the self-intermediate scattering function for the case of Si and its absence in Ga, both substances are fragile in character above and below their respective LLPT temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Bundling up carbon nanotubes through Wigner defects

We show, using ab initio total energy density functional theory, that the so-called Wigner defects, an interstitial carbon atom right besides a vacancy, which are present in irradiated graphite can also exist in bundles of carbon nanotubes. Due to the geometrical structure of a nanotube, however, this defect has a rather low formation energy, lower than the vacancy itself, suggesting that it may be one of the most important defects that are created after electron or ion irradiation. Moreover, they form a strong link between the nanotubes in bundles, increasing their shear modulus by a sizeable amount, clearly indicating its importance for the mechanical properties of nanotube bundles.

0 citations0 reviewsNo code linkedOpen access