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Joyeeta Nag

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.other physics.app-ph

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preprint2022arXiv

Fabrication of highly resistive NiO thin films for nanoelectronic applications

Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.

preprint2020arXiv

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

preprint2012arXiv

Ultrafast changes in lattice symmetry probed by coherent phonons

The electronic and structural properties of a material are strongly determined by its symmetry. Changing the symmetry via a photoinduced phase transition offers new ways to manipulate material properties on ultrafast timescales. However, in order to identify when and how fast these phase transitions occur, methods that can probe the symmetry change in the time domain are required. We show that a time-dependent change in the coherent phonon spectrum can probe a change in symmetry of the lattice potential, thus providing an all-optical probe of structural transitions. We examine the photoinduced structural phase transition in VO2 and show that, above the phase transition threshold, photoexcitation completely changes the lattice potential on an ultrafast timescale. The loss of the equilibrium-phase phonon modes occurs promptly, indicating a non-thermal pathway for the photoinduced phase transition, where a strong perturbation to the lattice potential changes its symmetry before ionic rearrangement has occurred.

preprint2010arXiv

Non-congruence of thermally driven structural and electronic transition in VO2

Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to ferromagnetic metal linked to a structural Jahn-Teller distortion3. Vanadium dioxide (VO2) likewise exhibits an insulator-to-metal transition (IMT) at ~67oC with abrupt changes in transport and optical properties and coupled to a structural phase transition (SPT) from monoclinic to tetragonal4. The IMT and SPT hystereses are signatures of first-order phase transition tracking the nucleation to stabilization of a new phase. Here we have for the first time measured independently the IMT and SPT hystereses in epitaxial VO2 films, and shown that the hystereses are not congruent. From the measured volume fractions of the two phases in the region of strong correlation, we have computed the evolving dielectric function under an effective-medium approximation. But the computed dielectric functions could not reproduce the measured IMT, implying that there is a strongly correlated metallic phase that is not in the stable rutile structure, consistent with Qazilbash et al5. Search for a corresponding macroscopic structural intermediate also yielded negative result.