Theoretical Investigation of Optical Intersubband Transitions and Infrared Photodetection in $β$-(AlxGa1-x)2O3/Ga2O3 Quantum Well Structures
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system. Conventional material systems have matured into successful intersubband device applications such as large area quantum well infrared photodetector(QWIP) focal plane arrays for reproducible imaging systems but are fundamentally limited via maximum conduction band offsets to mid and long wavelength infrared applications. Short and near infrared devices are technologically important to optical communications systems and biomedical imaging applications, but are difficult to realize in intersubband designs for this reason. In this work, we use a first principles approach to estimate the expansive design space of monoclinic $β$(AlxGa1x)2O3/Ga2O3 material system, which reaches from short wavelength infrared (1 to 3μm) to far infrared (greater than 30μm) transition wavelengths. We estimate the performance metrics of two QWIPs operating in the long and short wavelength regimes, including an estimation of high room temperature detectivity (about 10^11 Jones) at the optical communication wavelength λp 1.55μm. Our findings demonstrate the potential of the rapidly maturing (AlxGa1-x)2O3/Ga2O3 material system to open the door for intersubband device applications.