Researcher profile

Joseph A. Sulpizio

Joseph A. Sulpizio contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el physics.ins-det

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preprint2020arXiv

Ballistic and hydrodynamic magnetotransport in narrow channels

An increasing number of low carrier density materials exhibit a surprisingly large transport mean free path due to inefficient momentum relaxation. Consequently, charge transport in these systems is markedly non-ohmic but rather ballistic or hydrodynamic, features which can be explored by driving current through narrow channels. Using a kinetic equation approach we theoretically investigate how a non-quantizing magnetic field discerns ballistic and hydrodynamic transport, in particular in the spatial dependence of the transverse electric field, $E_y$: We find that $E_y$ is locally enhanced when the flow exhibits a sharp directional anisotropy in the non-equilibrium density. As a consequence, at weak magnetic fields, the curvature of $E_y$ has opposite signs in the ballistic and hydrodynamic regimes. Moreover, we find a robust signature of the onset of non-local correlations in the form of distinctive peaks of the transverse field, which are accessible by local measurements. Our results demonstrate that a purely hydrodynamic approach is insufficient in the Gurzhi regime once a magnetic field is introduced.

preprint2014arXiv

Nanoscale Phenomena in Oxide Heterostructures

Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical properties to be combined with an ever- increasing degree of experimental control. Already, these systems have exhibited such varied phenomena as superconductivity, magnetism, and ferroelasticity, all of which are gate-tunable, demonstrating their promise for fundamental discovery and technological innovation alike. To fully exploit this richness, it is necessary to understand and control the physics on the smallest scales, making the use of nanoscale probes essential. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a guide, we explore the exciting developments in the physics of oxide-based heterostructures, with a focus on nanostructures and the nanoscale probes employed to unravel their complex behavior.

preprint2013arXiv

Local Electrostatic Imaging of Striped Domain Order in LaAlO3/SrTiO3

The emerging field of complex oxide interfaces is generically built on one of the most celebrated substrates - strontium titanate (SrTiO3). This material hosts a range of phenomena, including ferroelasticity, incipient ferroelectricity, and most puzzlingly, contested giant piezoelectricity. Although these properties may markedly influence the oxide interfaces, especially on microscopic length scales, the lack of local probes capable of studying such buried systems has left their effects largely unexplored. Here we use a scanning charge detector - a nanotube single-electron transistor - to noninvasively image the electrostatic landscape and local mechanical response in the prototypical LaAlO3/SrTiO3 system with unprecedented sensitivity. Our measurements reveal that on microscopic scales SrTiO3 exhibits large anomalous piezoelectricity with curious spatial dependence. Through electrostatic imaging we unravel the microscopic origin for this extrinsic piezoelectricity, demonstrating its direct, quantitative connection to the motion of locally ordered tetragonal domains under applied gate voltage. These domains create striped potential modulations that can markedly influence the two-dimensional electron system at the conducting interface. Our results have broad implications to all complex oxide interfaces built on SrTiO3 and demonstrate the importance of microscopic structure to the physics of electrons at the LaAlO3/SrTiO3 interface.

preprint2010arXiv

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements

We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad temperature range (4K-300K). We have achieved a resolution at room temperature of 10aF per root Hz for a 10mV AC excitation at 17.5 kHz, with improved resolution at cryogenic temperatures, for the same excitation amplitude. We demonstrate the performance of our capacitance bridge by measuring the quantum capacitance of top-gated graphene devices and comparing against results obtained with the highest resolution commercially-available capacitance measurement bridge. Under identical test conditions, our bridge exceeds the resolution of the commercial tool by up to several orders of magnitude.