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Researcher profile

José David Doménech

José David Doménech contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.optics

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Published work

3 published item(s)

preprint2016arXiv

Thermal tuners on a Silicon Nitride platform

In this paper, the design trade-offs for the implementation of small footprint thermal tuners on silicon nitride are presented, and explored through measurements and supporting simulations of a photonic chip based on Mach-Zehnder Interferometers. Firstly, the electrical properties of the tuners are assessed, showing a compromise between compactness and deterioration. Secondly, the different variables involved in the thermal efficiency, switching power and heater dimensions, are analysed. Finally, with focus on exploring the limits of this compact tuners with regards to on chip component density, the thermal-cross talk is also investigated. Tuners with footprint of 270x5 μm 2 and switching power of 350 mW are reported, with thermal-cross talk, in terms of induced phase change in adjacent devices of less than one order of magnitude at distances over 20 μm. Paths for the improvement of thermal efficiency, power consumption and resilience of the devices are also outlined

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Echelle Gratings with Metal Reflectors in Generic Thick Silicon Technology

In this paper, the experimental demonstration of Echelle Grating multiplexers in generic thick Silicon technology, using metal reflectors, is reported. Two multiplexer designs are shown, covering the C-band and partially the S and L bands, with 4 and 8 channels respectively. The multiplexers exhibited performance similar to previously reported devices on dedicated manufacturing processes. The average figures measured are insertion loss 5 dB, loss non-uniformity 3 dB, polarization dependent loss 0.6 dB, polarization dependent wavelength shift of 0.3 nm, with reduced footprint. The performance comparison between multiplexers with and without metal mirrors, for both polarizations, is provided. Several dies were measured, and the passband features for the multiplexers are analyzed, giving a reference on the process variations for future designers.

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preprint2014arXiv

Arbitrary coupling ratio multimode interference couplers in Silicon-on-Insulator

In this paper we present the design, manufacturing, characterization and analysis of the coupling ratio spectral response for Multimode Interference (MMI) couplers in Silicon-on-Insulator (SOI) technology. The couplers were designed using a Si rib waveguide with SiO 2 cladding, on a regular 220 nm film and 2 μm buried oxide SOI wafer. A set of eight different designs, three canonical and five using a widened/narrowed coupler body, have been subject of study, with coupling ratios 50:50, 85:15 and 72:28 for the former, and 95:05, 85:15, 75:25, 65:35 and 55:45 for the latter. Two wafers of devices were fabricated, using two different etch depths for the rib waveguides. A set of six dies, three per wafer, whose line metrology matched the design, were retained for characterization. The coupling ratios obtained in the experimental results match, with little deviations, the design targets for a wavelength range between 1525 and 1575 nm, as inferred from spectral measurements and statistical analyses. Excess loss for all the devices is conservatively estimated to be less than approximately 2 dB. All the design parameters, body width and length, input/output positions and widths, and tapers dimensions are disclosed for reference.

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