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Jordan A. Hachtel

Jordan A. Hachtel contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2026arXiv

Unveiling the Shortwave Absorption Spectra of Alumina Aerosols: Implications for Solar Radiation Modification

Alumina is proposed for Stratospheric Aerosol Injection (SAI)-based solar radiation modification due to its presumed ability to scatter sunlight strongly while absorbing weakly. Alumina is assigned negligible solar shortwave absorption in climate models; this assumption is not validated owing to technological challenges in quantifying its weak absorption signals. We report alumina's shortwave imaginary refractive index $k$, a determinant of its absorption strength, using sensitive in situ photoacoustic spectrometry, finding values ranging from $1.4 \times 10^{-4}$ to $1.2 \times 10^{-3}$. Particle-scale electron energy-loss spectroscopy provided independent validation and revealed that the non-ideal absorption arises from oxygen vacancy defects in the alumina's crystal structure. Aerosol chemistry climate model simulations to evaluate shortwave absorption radiative effects revealed insignificant impacts on radiative forcing and stratospheric warming. Our findings indicate that alumina's shortwave absorption, previously reported as a source of uncertainty, is unlikely to affect SAI impact calculations.

preprint2022arXiv

A New Path to Nanoscale Cellular Analysis with Monochromated Electron Energy-Loss Spectroscopy

High-spatial-resolution vibrational spectroscopy is one of the principal techniques for nanoscale compositional analysis in biological materials. Here, we present a new method for the analysis of whole-cell biological specimens through nanoscale vibrational electron energy-loss spectroscopy (EELS) in the monochromated scanning transmission electron microscope. Using the combined spatial and spectral resolution of the technique, we examine the vascular system of a cucumber stem and identify clear physical and vibrational signatures from the different cellular regions with high spatial resolution. Furthermore, using first-principles calculations combined with optical and EELS spectroscopy on the individual components that make up the cucumber stem, we unravel the physical mechanisms of the vibrational signatures and directly assign compositional origins to the cell walls and bodies of different cellular regions. These results demonstrate that monochromated electron energy-loss spectroscopy is a promising technique for nanoscale spatial mapping of the chemical composition of biological materials.

preprint2022arXiv

Direct Visualization of Localized Vibrations at Complex Grain Boundaries

Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical, and thermal properties. Here, we examine a SrTiO3 GB using atomic-resolution aberration-corrected scanning transmission electron microscopy (STEM) and ultra-high-energy-resolution monochromated electron energy-loss spectroscopy (EELS), in conjunction with density functional theory (DFT) calculations. This combination enables the direct correlation of the GB structure, composition, and chemical bonding with atomic vibrations within the GB dislocation-cores. We observe that nonstoichiometry and changes in coordination and bonding at the GB leads to a redistribution of vibrational states at the GB and its dislocation-cores relative to the bounding grains. The access to localized vibrations within GBs provided by ultrahigh spatial/spectral resolution EELS correlated with atomic coordination, bonding, and stoichiometry and validated by theory, provides a direct route to quantifying the impact of individual boundaries on macroscopic properties.

preprint2022arXiv

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

preprint2021arXiv

Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices

As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses.

preprint2021arXiv

Unraveling Ultrafast Photoionization in Hexagonal Boron Nitride

The non-linear response of dielectrics to intense, ultrashort electric fields has been a sustained topic of interest for decades with one of its most important applications being femtosecond laser micro/nano-machining. More recently, renewed interests in strong field physics of solids were raised with the advent of mid-infrared femtosecond laser pulses, such as high-order harmonic generation, optical-field-induced currents, etc. All these processes are underpinned by photoionization (PI), namely the electron transfer from the valence to the conduction bands, on a time scale too short for phononic motion to be of relevance. Here, in hexagonal boron nitride, we reveal that the bandgap can be finely manipulated by femtosecond laser pulses as a function of field polarization direction with respect to the lattice, in addition to the field's intensity. It is the modification of bandgap that enables the ultrafast PI processes to take place in dielectrics. We further demonstrate the validity of the Keldysh theory in describing PI in dielectrics in the few TW/cm2 regime.