Researcher profile

Joonkyu Park

Joonkyu Park contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

HandOccNet: Occlusion-Robust 3D Hand Mesh Estimation Network

Hands are often severely occluded by objects, which makes 3D hand mesh estimation challenging. Previous works often have disregarded information at occluded regions. However, we argue that occluded regions have strong correlations with hands so that they can provide highly beneficial information for complete 3D hand mesh estimation. Thus, in this work, we propose a novel 3D hand mesh estimation network HandOccNet, that can fully exploits the information at occluded regions as a secondary means to enhance image features and make it much richer. To this end, we design two successive Transformer-based modules, called feature injecting transformer (FIT) and self- enhancing transformer (SET). FIT injects hand information into occluded region by considering their correlation. SET refines the output of FIT by using a self-attention mechanism. By injecting the hand information to the occluded region, our HandOccNet reaches the state-of-the-art performance on 3D hand mesh benchmarks that contain challenging hand-object occlusions. The codes are available in: https://github.com/namepllet/HandOccNet.

preprint2022arXiv

Pay Attention to Hidden States for Video Deblurring: Ping-Pong Recurrent Neural Networks and Selective Non-Local Attention

Video deblurring models exploit information in the neighboring frames to remove blur caused by the motion of the camera and the objects. Recurrent Neural Networks~(RNNs) are often adopted to model the temporal dependency between frames via hidden states. When motion blur is strong, however, hidden states are hard to deliver proper information due to the displacement between different frames. While there have been attempts to update the hidden states, it is difficult to handle misaligned features beyond the receptive field of simple modules. Thus, we propose 2 modules to supplement the RNN architecture for video deblurring. First, we design Ping-Pong RNN~(PPRNN) that acts on updating the hidden states by referring to the features from the current and the previous time steps alternately. PPRNN gathers relevant information from the both features in an iterative and balanced manner by utilizing its recurrent architecture. Second, we use a Selective Non-Local Attention~(SNLA) module to additionally refine the hidden state by aligning it with the positional information from the input frame feature. The attention score is scaled by the relevance to the input feature to focus on the necessary information. By paying attention to hidden states with both modules, which have strong synergy, our PAHS framework improves the representation powers of RNN structures and achieves state-of-the-art deblurring performance on standard benchmarks and real-world videos.

preprint2022arXiv

Recurrence-in-Recurrence Networks for Video Deblurring

State-of-the-art video deblurring methods often adopt recurrent neural networks to model the temporal dependency between the frames. While the hidden states play key role in delivering information to the next frame, abrupt motion blur tend to weaken the relevance in the neighbor frames. In this paper, we propose recurrence-in-recurrence network architecture to cope with the limitations of short-ranged memory. We employ additional recurrent units inside the RNN cell. First, we employ inner-recurrence module (IRM) to manage the long-ranged dependency in a sequence. IRM learns to keep track of the cell memory and provides complementary information to find the deblurred frames. Second, we adopt an attention-based temporal blending strategy to extract the necessary part of the information in the local neighborhood. The adpative temporal blending (ATB) can either attenuate or amplify the features by the spatial attention. Our extensive experimental results and analysis validate the effectiveness of IRM and ATB on various RNN architectures.

preprint2020arXiv

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

preprint2019arXiv

Role of temperature-dependent electron trapping dynamics in the optically driven nanodomain transformation in a PbTiO${_3}$/SrTiO${_3}$ superlattice

The spontaneously formed striped polarization nanodomain configuration of a PbTiO${_3}$/SrTiO${_3}$ superlattice transforms to a uniform polarization state under above-bandgap illumination with a time dependence varying with the intensity of optical illumination and a well-defined threshold intensity. Recovery after the end of illumination occurs over a temperature-dependent period of tens of seconds at room temperature and shorter times at elevated temperatures. A model in which the screening of the depolarization field depends on the population of trapped electrons correctly predicts the observed temperature and optical intensity dependence.