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Anastasios Pateras

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Published work

3 published item(s)

preprint2020arXiv

Combining Laue diffraction with Bragg coherent diffraction imaging at 34-ID-C

Measurement modalities in Bragg coherent diffraction imaging (BCDI) rely on finding signal from a single nanoscale crystal object, which satisfies the Bragg condition among a large number of arbitrarily oriented nanocrystals. However, even when the signal from a single Bragg reflection with (hkl) Miller indices is found, the crystallographic axes on the retrieved three-dimensional (3D) image of the crystal remain unknown, and thus, localizing in reciprocal space other Bragg reflections becomes in reality impossible or requires good knowledge of the orientation of the crystal. We report the commissioning of a movable double-bounce Si (111) monochromator at the 34-ID-C end station of the Advanced Photon Source, which aims at delivering multi-reflection BCDI as a standard tool in a single beamline instrument. The new instrument enables this through rapid switching from monochromatic to broadband (pink) beam permitting the use of Laue diffraction to determine crystal orientation. With a proper orientation matrix determined for the lattice, one can measure coherent diffraction near multiple Bragg peaks, thus providing sufficient information to image the full strain tensor in 3D. We discuss the design, concept of operation, the developed procedures for indexing Laue patterns, and automated measuring of Bragg coherent diffraction data from multiple reflections of the same nanocrystal.

preprint2020arXiv

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

preprint2019arXiv

Role of temperature-dependent electron trapping dynamics in the optically driven nanodomain transformation in a PbTiO${_3}$/SrTiO${_3}$ superlattice

The spontaneously formed striped polarization nanodomain configuration of a PbTiO${_3}$/SrTiO${_3}$ superlattice transforms to a uniform polarization state under above-bandgap illumination with a time dependence varying with the intensity of optical illumination and a well-defined threshold intensity. Recovery after the end of illumination occurs over a temperature-dependent period of tens of seconds at room temperature and shorter times at elevated temperatures. A model in which the screening of the depolarization field depends on the population of trapped electrons correctly predicts the observed temperature and optical intensity dependence.