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Source author record

John M. Nichol

John M. Nichol appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.otherphysics.ins-det

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Published work

11 published item(s)

preprint2026arXiv

Multi-level charge fluctuations in a Si/SiGe double quantum dot device

Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration. Understanding the nature and origins of these discrete charge fluctuations may provide insights into material improvements or means of mitigating charge noise in semiconductor quantum dot devices. In this work, we measure multi-level charge fluctuations present in a Si/SiGe double quantum dot device over a range of device operating voltages and temperatures. To characterize the parameter-dependent dynamics of the underlying fluctuating degrees of freedom, we perform a detailed analysis of the measured noise timeseries. We perform algorithmically assisted drift detection and change point detection to detrend the data and remove a slow fluctuator component, as a preprocessing step. We perform model comparison on the post-processed time series between different $n$-level fluctuator ($n$LF) factorial hidden Markov models (FHMMs), finding that although at most sweep values the independent pair of 2LFs model would be preferred, in a particular region of voltage space the 4LF model outperforms the other models, indicating a conditional rate dependence between the two fluctuators. By tracking fluctuator transition rates, biases, and weights over a range of different device configurations, we estimate gate voltage and conductivity sensitivity. In particular, we fit a phenomenological, detailed balance model to the extracted independent 2LFs rate data, yielding lever arm estimates in the range of $-2 μ$eV/mV up to $4 μ$eV/mV between the two 2LFs and nearby gate electrodes. We expect that these characterization results may aid in subsequent spatial triangulation of the charge fluctuators.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Long-Distance Superexchange between Semiconductor Quantum-Dot Electron Spins

Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance spin-chain-mediated superexchange coupling between electron spin qubits in semiconductor quantum dots. We weakly couple two electron spins to the ends of a two-site spin chain. Depending on the spin state of the chain, we observe oscillations between the distant end spins. We resolve the dynamics of both the end spins and the chain itself, and our measurements agree with simulations. Superexchange is a promising technique to create long-distance coupling between quantum-dot spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent multi-spin exchange coupling in a quantum-dot spin chain

Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing simultaneous exchange couplings is the nonlinear and nonlocal dependence of the exchange couplings on gate voltages. Through a combination of electrostatic simulation and theoretical modeling, we show that this challenge arises primarily due to lateral shifts of the quantum dots during gate pulses. Building on this insight, we develop two models, which can be used to predict the confinement gate voltages for a desired set of exchange couplings. Although the model parameters depend on the number of exchange couplings desired (suggesting that effects in addition to lateral wavefunction shifts are important), the models are sufficient to enable simultaneous and independent control of all three exchange couplings in a quadruple quantum dot. We demonstrate two-, three-, and four-spin exchange oscillations, and our data agree with simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Conditional Teleportation of Quantum-Dot Spin States

Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a challenge, and this goal remains the focus of intense research. Quantum teleportation is a canonical method to transmit qubit states, but it has not been implemented in quantum-dot spin qubits. Here, we present evidence for quantum teleportation of electron spin qubits in semiconductor quantum dots. Although we have not performed quantum state tomography to definitively assess the teleportation fidelity, our data are consistent with conditional teleportation of spin eigenstates, entanglement swapping, and gate teleportation. Such evidence for all-matter spin-state teleportation underscores the capabilities of exchange-coupled spin qubits for quantum-information transfer.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low-frequency charge noise in Si/SiGe quantum dots

Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si/SiGe quantum dots with overlapping gates. We find that charge noise increases with aluminum oxide thickness. We also find strong dot-to-dot variations in the temperature dependence of the noise magnitude and spectrum. These findings suggest that each quantum dot experiences noise caused by a distinct ensemble of two-level systems, each of which has a non-uniform distribution of thermal activation energies. Taken together, our results suggest that charge noise in Si/SiGe quantum dots originates at least in part from a non-uniform distribution of two-level systems near the surface of the semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Rapid high-fidelity spin state readout in Si/SiGe quantum dots via radio-frequency reflectometry

Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive. Radio-frequency reflectometry enables rapid high-fidelity readout of GaAs spin qubits, but the relatively large resistances and capacitances of accumulation-mode Si quantum dot devices have made radio-frequency reflectometry challenging in these platforms. In this work, we implement radio-frequency reflectometry in a Si/SiGe quantum dot device with overlapping gates by making minor device-level changes that eliminate these challenges. We demonstrate charge state readout with a fidelity above 99.9% in an integration time of 300 ns. We measure the singlet and triplet states of a double quantum dot via both conventional Pauli spin blockade and a charge latching mechanism, and we achieve maximum fidelities of 82.9% and 99.0% in 2.08 $μ$s and 1.6 $μ$s integration times, respectively. We also use radio-frequency reflectometry to perform single-shot readout of single-spin states via spin-selective tunneling in microsecond-scale integration times.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High-fidelity entangling gate for double-quantum-dot spin qubits

Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking and self-consistent quantum measurement, state, and process tomography, we measure single-qubit gate fidelities of approximately 99% and an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Suppressing qubit dephasing using real-time Hamiltonian estimation

Unwanted interaction between a quantum system and its fluctuating environment leads to decoherence and is the primary obstacle to establishing a scalable quantum information processing architecture. Strategies such as environmental and materials engineering, quantum error correction and dynamical decoupling can mitigate decoherence, but generally increase experimental complexity. Here we improve coherence in a qubit using real-time Hamiltonian parameter estimation. Using a rapidly converging Bayesian approach, we precisely measure the splitting in a singlet-triplet spin qubit faster than the surrounding nuclear bath fluctuates. We continuously adjust qubit control parameters based on this information, thereby improving the inhomogenously broadened coherence time ($T_{2}^{*}$) from tens of nanoseconds to above 2 $μ$s and demonstrating the effectiveness of Hamiltonian estimation in reducing the effects of correlated noise in quantum systems. Because the technique demonstrated here is compatible with arbitrary qubit operations, it is a natural complement to quantum error correction and can be used to improve the performance of a wide variety of qubits in both metrological and quantum-information-processing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nanoscale Fourier-transform MRI

We report a method for nanometer-scale pulsed nuclear magnetic resonance imaging and spectroscopy. Periodic radiofrequency pulses are used to create temporal correlations in the statistical polarization of a solid organic sample. The spin density is spatially encoded by applying a series of intense magnetic field gradient pulses generated by focusing electric current through a nanometer-scale metal constriction. We demonstrate this technique using a silicon nanowire mechanical oscillator as a magnetic resonance sensor to image 1H spins in a polystyrene sample. We obtain a two-dimensional projection of the sample proton density with approximately 10-nm resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Nanomechanical detection of nuclear magnetic resonance using a silicon nanowire oscillator

We report the use of a silicon nanowire mechanical oscillator as a low-temperature nuclear magnetic resonance force sensor to detect the statistical polarization of 1H spins in polystyrene. Under operating conditions, the nanowire experienced negligible surface-induced dissipation and exhibited a nearly thermally-limited force noise of 1.9 aN^2/Hz in the measurement quadrature. In order to couple the 1H spins to the nanowire oscillator, we have developed a new magnetic resonance force detection protocol which utilizes a nanoscale current-carrying wire to produce large time-dependent magnetic field gradients as well as the rf magnetic field.

0 citations0 reviewsNo code linkedOpen access