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Geoffrey C. Gardner

Geoffrey C. Gardner appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.str-elcond-mat.supr-con

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Published work

20 published item(s)

preprint2022arXiv

Effect of Rashba and Dresselhaus spin-orbit coupling on supercurrent rectification and magnetochiral anisotropy of ballistic Josephson junctions

Simultaneous breaking of inversion- and time-reversal symmetry in Josephson junction leads to a possible violation of the $I(φ)=-I(-φ)$ equality for the current-phase relation. This is known as anomalous Josephson effect and it produces a phase shift $φ_0$ in sinusoidal current-phase relations. In ballistic Josephson junctions with non-sinusoidal current phase relation the observed phenomenology is much richer, including the supercurrent diode effect and the magnetochiral anisotropy of Josephson inductance. In this work, we present measurements of both effects on arrays of Josephson junctions defined on epitaxial Al/InAs heterostructures. We show that the orientation of the current with respect to the lattice affects the magnetochiral anisotropy, possibly as the result of a finite Dresselhaus component. In addition, we show that the two-fold symmetry of the Josephson inductance reflects in the activation energy for phase slips.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Measurements of cyclotron resonance of the interfacial states in strong spin-orbit coupled 2D electron gases proximitized with aluminum

Two-dimensional electron gasses (2DEG) in InAs quantum wells proximitized by aluminum are promising platforms for topological qubits based on Majorana zero modes. However, there are still substantial uncertainties associated with the nature of the electronic states at the interfaces of these systems. It is challenging to probe the properties of these hybridized states as they are buried under a relatively thick aluminum layer. In this work, we have investigated a range of InAs/In$ _{1-\text{x}} $Ga$ _\text{x} $As heterostructures with Al overlayers using high precision time-domain THz spectroscopy. Despite the thick metallic overlayer, we observe a prominent cyclotron resonance in the magnetic field that can be associated with the response of the interfacial states. Measurements of the THz range complex Faraday rotation allow the extraction of the sign and magnitude of the effective mass, the density of charge carriers, and scattering times of the 2DEG despite the close proximity of the aluminum layer. We discuss the extracted band parameters and connect their values to the known physics of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Precision measurement of electron-electron scattering in GaAs/AlGaAs using transverse magnetic focusing

Electron-electron (e-e) interactions assume a cardinal role in solid-state physics. Quantifying the e-e scattering length is hence critical. In this paper we show that the mesoscopic phenomenon of transverse magnetic focusing (TMF) in two-dimensional electron systems forms a precise and sensitive technique to measure this length scale. Conversely we quantitatively demonstrate that e-e scattering is the predominant effect limiting TMF amplitudes in high-mobility materials. Using high-resolution kinetic simulations, we show that the TMF amplitude at a maximum decays exponentially as a function of the e-e scattering length, which leads to a ready approach to extract this length from the measured TMF amplitudes. The approach is applied to measure the temperature-dependent e-e scattering length in high-mobility GaAs/AlGaAs heterostructures. The simulations further reveal current vortices that accompany the cyclotron orbits - a collective phenomenon counterintuitive to the ballistic transport underlying a TMF setting.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A robust protocol for entropy measurement in mesoscopic circuits

Previous measurements utilizing Maxwell relations to measure change in entropy, $S$, demonstrated remarkable accuracy of measuring the spin-1/2 entropy of electrons in a weakly coupled quantum dot. However, these previous measurements relied upon prior knowledge of the charge transition lineshape. This had the benefit of making the determination of entropy independent of measurement scaling, but at the cost of limiting the applicability of the approach to relatively simple systems. To measure entropy of more exotic mesoscopic systems, a new analysis technique can be employed; however, doing so requires precise knowledge of the measurement scaling. Here, we give details on the necessary improvements made to the original experimental approach and highlight some of the common challenges (along with strategies to overcome them) that other groups may face when attempting this type of measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Impact of bulk-edge coupling on observation of anyonic braiding statistics in quantum Hall interferometers

Quantum Hall interferometers have been used to probe fractional charge, and more recently, fractional statistics of quasiparticles. Theoretical predictions have been made regarding the effect of electrostatic coupling on interferometer behavior and observation of anyonic phases. Here we present measurements of a small Fabry-Perot interferometer in which these electrostatic coupling constants can be determined experimentally, facilitating quantitative comparison with theory. At the $ν= 1/3$ fractional quantum Hall state, this device exhibits Aharonov-Bohm interference near the center of the conductance plateau interrupted by a few discrete phase jumps, and $Φ_0$ oscillations at higher and lower magnetic fields, consistent with theoretical predictions for detection of anyonic statistics. We estimate the electrostatic parameters $K_I$ and $K_{IL}$ by two methods: by the ratio of oscillation periods in compressible versus incompressible regions, and from finite-bias conductance measurements, and these two methods yield consistent results. We find that the extracted $K_I$ and $K_{IL}$ can account for the deviation of the values of the discrete phase jumps from the theoretically predicted anyonic phase $θ_a = 2π/3$. In the integer quantum Hall regime, we find that the experimental values of $K_I$ and $K_{IL}$ can account for the the observed Aharonov-Bohm and Coulomb dominated behavior of different edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Josephson inductance as a probe for highly ballistic semiconductor-superconductor weak links

We present simultaneous measurements of Josephson inductance and DC transport characteristics of ballistic Josephson junctions based upon an epitaxial Al-InAs heterostructure. The Josephson inductance at finite current bias directly reveals the current-phase relation. The proximity-induced gap, the critical current and the average value of the transparency $\barτ$ are extracted without need for phase bias, demonstrating, e.g.,~a near-unity value of $\barτ=0.94$. Our method allows us to probe the devices deeply in the non-dissipative regime, where ordinary transport measurements are featureless. In perpendicular magnetic field the junctions show a nearly perfect Fraunhofer pattern of the critical current, which is insensitive to the value of $\barτ$. In contrast, the signature of supercurrent interference in the inductance turns out to be extremely sensitive to $\barτ$.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Long-Distance Superexchange between Semiconductor Quantum-Dot Electron Spins

Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance spin-chain-mediated superexchange coupling between electron spin qubits in semiconductor quantum dots. We weakly couple two electron spins to the ends of a two-site spin chain. Depending on the spin state of the chain, we observe oscillations between the distant end spins. We resolve the dynamics of both the end spins and the chain itself, and our measurements agree with simulations. Superexchange is a promising technique to create long-distance coupling between quantum-dot spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids

We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial non-uniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybrid InAs heterostructures with a conducting quantum well show similarly enhanced superconducting properties transferred to the two-dimensional electron gas (2DEG) by proximity effect, with critical perpendicular magnetic fields up to 3.5 T. An insulating AlOx film, that passivates the heterostructure from exposure to air, is obtained by complete oxidation of the Al. It simultaneously removes the need to strip Al which damages the underlying semiconductor. AO passivation yielded 2DEG mobilities two times higher than similar devices with Al removed by wet etching. An AO-passivated Hall bar showed quantum Hall features emerging at a transverse field of 2.5 T, below the critical transverse field of thinned films, eventually allowing transparent coupling of quantum Hall effect and superconductivity. AO thinning and passivation are compatible with standard lithographic techniques, giving lateral resolution below <50 nm. We demonstrate local patterning of AO by realizing a semiconductor-based Josephson junction operating up to 0.3 T perpendicular.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent multi-spin exchange coupling in a quantum-dot spin chain

Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing simultaneous exchange couplings is the nonlinear and nonlocal dependence of the exchange couplings on gate voltages. Through a combination of electrostatic simulation and theoretical modeling, we show that this challenge arises primarily due to lateral shifts of the quantum dots during gate pulses. Building on this insight, we develop two models, which can be used to predict the confinement gate voltages for a desired set of exchange couplings. Although the model parameters depend on the number of exchange couplings desired (suggesting that effects in addition to lateral wavefunction shifts are important), the models are sufficient to enable simultaneous and independent control of all three exchange couplings in a quadruple quantum dot. We demonstrate two-, three-, and four-spin exchange oscillations, and our data agree with simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Conditional Teleportation of Quantum-Dot Spin States

Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a challenge, and this goal remains the focus of intense research. Quantum teleportation is a canonical method to transmit qubit states, but it has not been implemented in quantum-dot spin qubits. Here, we present evidence for quantum teleportation of electron spin qubits in semiconductor quantum dots. Although we have not performed quantum state tomography to definitively assess the teleportation fidelity, our data are consistent with conditional teleportation of spin eigenstates, entanglement swapping, and gate teleportation. Such evidence for all-matter spin-state teleportation underscores the capabilities of exchange-coupled spin qubits for quantum-information transfer.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas

Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $\sim 0.6\, \mathrm{mT}$. We estimate the spin-orbit length in the system to be $\sim 5-10\, μ\mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Stable quantum dots in an InSb two-dimensional electron gas

Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the $δ$-doping layer from the heterostructure, and induce carriers electrostatically. This allows us to perform the first detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field we determine the ground state spin configuration and show that the large g-factor ($\sim$30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Bias-induced breakdown of electron solids in the second Landau level

Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indicates that these signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or hole-like character of the RIQH state.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High-fidelity entangling gate for double-quantum-dot spin qubits

Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking and self-consistent quantum measurement, state, and process tomography, we measure single-qubit gate fidelities of approximately 99% and an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE

We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility in excess of 35x10^6cm2/Vs at density n=3.0x10^11/cm2 and mobility 18x10^6cm2/Vs at n=1.1x1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting mobility <40x10^6cm2/Vs. We describe strategies to overcome this limitation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Noise suppression using symmetric exchange gates in spin qubits

We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor-of-six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum capacitance anomalies of two-dimensional non-equilibrium states under microwave irradiation

We report our direct study of the compressibility on ultrahigh mobility two-dimensional electron system ($μ_{e} \sim 1 \times 10^{7}$ cm$^{2}$/Vs) in GaAs/AlGaAs quantum wells under microwave (MW) irradiation. The field penetration current results show that the quantum capacitance oscillates with microwave induced resistance oscillations (MIRO), however, the trend is opposite with respect to the compressibility for usual equilibrium states in previous theoretical explanations. The anomalous phenomena provide a platform for study on the non-equilibrium system under microwave, and point to the current domains and inhomogeneity induced by radiation. Moreover, the quantum capacitance indication for multi-photon process around $j = 1/2$ is detected under intensive microwave below 30 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Field-effect-induced two-dimensional electron gas utilizing modulation doping for improved ohmic contacts

Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate reliable low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect and is tunable over a wide range of density. Device design, fabrication, and low temperature (T= 0.3K) transport data are reported.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Low-temperature illumination and annealing of ultra-high quality quantum wells

The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x

We report on the growth and electrical characterization of modulation-doped Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As quantum wells with mole fractions as low as x=0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns-1 per %Al. Additionally we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile nu=5/2 and nu=12/5 fractional quantum Hall states.

0 citations0 reviewsNo code linkedOpen access