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Researcher profile

Johannes Lischner

Johannes Lischner contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.comp-phphysics.chem-ph

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Published work

18 published item(s)

preprint2023arXiv

Phason-mediated interlayer exciton diffusion in WS2/WSe2 moiré heterostructure

Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate how phasons are integral to properly describing and understanding low-temperature interlayer exciton diffusion in WS2/WSe2 heterostructure. We perform photoluminescence (PL) spectroscopy to understand how the coupling between the layers, affected by their relative orientation, impacts the excitonic properties of the system. Samples fabricated with stacking angles of 0° and 60° are investigated taking into account the stacking angle dependence of the two common moiré potential profiles. Additionally, we present spatially and time-resolved exciton diffusion measurements, looking at the photoluminescence emission in a temperature range from 30 K to 250 K. An accurate potential for the two configurations are computed via density functional theory (DFT) calculations. Finally, we perform molecular dynamics simulation in order to visualize the phasons motion, estimating the phason speed at different temperatures, providing novel insights into the mechanics of exciton propagation at low temperatures that cannot be explained within the frame of classical exciton diffusion alone.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Atomistic hartree theory and crystal field of twisted double bilayer graphene near the magic angle

Twisted double bilayer graphene (tDBLG) is a moiré material that has recently generated significant interest because of the observation of correlated phases near the magic angle. We carry out atomistic Hartree theory calculations to study the role of electron-electron interactions in the normal state. In contrast to twisted bilayer graphene (tBLG), we find that such interactions do not result in significant doping-dependent deformations of the electronic band structure. However, interactions play an important role for the electronic structure in the presence of a perpendicular electric field as they screen the external field. Finally, we analyze the contribution of the Hartree potential to the crystal field, i.e. the on-site energy difference between the inner and outer layers. We find that the on-site energy obtained from Hartree theory has the same sign, but a smaller magnitude compared to previous studies in which the on-site energy was determined by fitting tight-binding results to ab initio density-functional theory (DFT) band structures. To understand this quantitative difference, we analyze the ab initio Kohn-Sham potential obtained from DFT and find that a subtle interplay of electron-electron and electron-ion interactions determines the magnitude of the on-site potential.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Chiral valley phonons and flat phonon bands in moiré materials

We investigate the chirality of phonon modes in twisted bilayer WSe2 and demonstrate distinct chiral behavior of the $K/K^\prime$ valley phonons for twist angles close to $0^{\circ}$ and close to $60^{\circ}$. In particular, multiple chiral non-degenerate $K/K^\prime$ valley phonons are found for twist angles near $60^{\circ}$ whereas no non-degenerate chiral modes are found for twist angles close to $0^\circ$. Moreover, we discover two sets of emergent chiral valley modes that originate from an inversion symmetry breaking at the moiré scale and find similar modes in moiré patterns of strain-engineered bilayers WSe2 and MoSe2/WSe2 heterostructures. At the energy gap between acoustic and optical modes, the formation of flat phonon bands for a broad range of twist angles is observed in the twisted bilayer WSe2. Our findings are relevant for understanding electron-phonon and exciton-phonon scattering in moiré materials and also for the design of phononic analogues of flat band electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Combining time-dependent density functional theory and the $Δ$SCF approach for accurate core-electron spectra

Spectroscopies that probe electronic excitations from core levels into unoccupied orbitals, such as X-ray absorption spectroscopy and electron energy loss spectroscopy, are widely used to gain insight into the electronic and chemical structure of materials. To support the interpretation of experimental spectra, we assess the performance of a first-principles approach that combines linear-response time-dependent density (TDDFT) functional theory with the $Δ$~self\nobreakdash-consistent field ($Δ$SCF) approach. In particular, we first use TDDFT to calculate the core-level spectrum and then shift the spectrum such that the lowest excitation energy from TDDFT agrees with that from $Δ$SCF. We apply this method to several small molecules and find encouraging agreement between calculated and measured spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Exciton-polarons in the presence of strongly correlated electronic states in a MoSe$_2$/WSe$_2$ moiré superlattice

Two-dimensional moiré materials provide a highly tunable platform to investigate strongly correlated electronic states. Such emergent many-body phenomena can be optically probed in moiré systems created by stacking two layers of transition metal dichalcogenide semiconductors: optically injected excitons can interact with itinerant carriers occupying narrow moiré bands to form exciton-polarons sensitive to strong correlations. Here, we investigate the behaviour of excitons dressed by a Fermi sea localised by the moiré superlattice of a molybdenum diselenide (MoSe$_2$) / tungsten diselenide (WSe$_2$) twisted hetero-bilayer. At a multitude of fractional fillings of the moiré lattice, we observe ordering of both electrons and holes into stable correlated electronic states. Magneto-optical measurements reveal extraordinary Zeeman splittings of the exciton-polarons due to exchange interactions in the correlated hole phases, with a maximum close to the correlated state at one hole per site. The temperature dependence of the Zeeman splitting reveals antiferromagnetic ordering of the correlated holes across a wide range of fractional fillings. Our results illustrate the nature of exciton-polarons in the presence of strongly correlated electronic states and reveal the rich potential of the MoSe$_2$/WSe$_2$ platform for investigations of Fermi-Hubbard and Bose-Hubbard physics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Plasmon-induced hot carriers from interband and intraband transitions in large noble metal nanoparticles

Hot electrons generated from the decay of localized surface plasmons in metallic nanostructures have the potential to transform photocatalysis, photodetection and other optoelectronic applications. However, the understanding of hot-carrier generation in realistic nanostructures, in particular the relative importance of interband and intraband transitions, remains incomplete. Here we report theoretical predictions of hot-carrier generation rates in spherical nanoparticles of the noble metals silver, gold and copper with diameters up to 30 nanometers obtained from a novel atomistic linear-scaling approach. As the nanoparticle size increases the relative importance of interband transitions from d-bands to sp-bands relative to surface-enabled sp-band to sp-band transitions increases. We find that the hot-hole generation rate is characterized by a peak at the onset of the d-bands, while the position of the corresponding peak in the hot-electron distribution can be controlled through the illumination frequency. In contrast, intraband transitions give rise to hot electrons, but relatively cold holes. Importantly, increasing the dielectric constant of the environment removes hot carriers generated from interband transitions, while increasing the number of hot carriers from intraband transitions. The insights resulting from our work enable the design of nanoparticles for specific hot-carrier applications through their material composition, size and dielectric environment.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Unconventional Superconductivity in Magic-Angle Twisted Trilayer Graphene

Magic-angle twisted trilayer graphene (MATTG) recently emerged as a highly tunable platform for studying correlated phases of matter, such as correlated insulators and superconductivity. Superconductivity occurs in a range of doping levels that is bounded by van Hove singularities which stimulates the debate of the origin and nature of superconductivity in this material. In this work, we discuss the role of spin-fluctuations arising from atomic-scale correlations in MATTG for the superconducting state. We show that in a phase diagram as function of doping ($ν$) and temperature, nematic superconducting regions are surrounded by ferromagnetic states and that a superconducting dome with $T_c \approx 2\,\mathrm{K}$ appears between the integer fillings $ν=-2$ and $ν= -3$. Applying a perpendicular electric field enhances superconductivity on the electron-doped side which we relate to changes in the spin-fluctuation spectrum. We show that the nematic unconventional superconductivity leads to pronounced signatures in the local density of states detectable by scanning tunneling spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dielectric engineering of hot carrier generation by quantized plasmons in embedded silver nanoparticles

Understanding and controlling properties of plasmon-induced hot carriers is a key step towards next-generation photovoltaic and photocatalytic devices. Here, we uncover a route to engineering hot-carrier generation rates of silver nanoparticles by designed embedding in dielectric host materials. Extending our recently established quantum-mechanical approach to describe the decay of quantized plasmons into hot carriers we capture both external screening by the nanoparticle environment and internal screening by silver d-electrons through an effective electron-electron interaction. We find that hot-carrier generation can be maximized by engineering the dielectric host material such that the energy of the localized surface plasmon coincides with the highest value of the nanoparticle joint density of states. This allows us to uncover a path to control the energy of the carriers and the amount produced, for example a large number of relatively low-energy carriers are obtained by embedding in strongly screening environments.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Lifetime effects and satellites in the photoelectron spectrum of tungsten metal

Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of metallic tungsten, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) with reflection electron energy loss spectroscopy (REELS) and a multi-tiered ab-initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and GW+C), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten based mixed-metal systems and holds promise for the re-assessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy

SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO$_2$. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard X-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO$_2$ and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Frontier Orbitals and Quasiparticle Energy Levels in Ionic Liquids

Room temperature ionic liquids play an important role in many technological applications and a detailed understanding of their frontier molecular orbitals is required to optimize interfacial barriers, reactivity and stability with respect to electron injection and removal. In this work, we calculate quasiparticle energy levels of ionic liquids using first-principles many-body perturbation theory within the GW approximation and compare our results to various mean-field approaches, including semilocal and hybrid density-functional theory and Hartree-Fock. We find that the mean-field results depend qualitatively and quantitatively on the treatment of exchange-correlation effects, while GW calculations produce results that are in excellent agreement with experimental photoelectron spectra of gas phase ion pairs and ionic liquids. These results establish the GW approach as a valuable tool for understanding the electronic structures of ionic liquids.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent 2D Dirac fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Generation of plasmonic hot carriers from d-bands in metallic nanoparticles

We present an approach to master the well-known challenge of calculating the contribution of d-bands to plasmon-induced hot carrier rates in metallic nanoparticles. We generalise the widely used spherical well model for the nanoparticle wavefunctions to flat d-bands using the envelope function technique. Using Fermi's golden rule, we calculate the generation rates of hot carriers after the decay of the plasmon due to transitions from either a d-band state to an sp-band state or from an sp-band state to another sp-band state. We apply this formalism to spherical silver nanoparticles with radii up to 20~nm and also study the dependence of hot carrier rates on the energy of the d-bands. We find that for nanoparticles with a radius less than 2.5~nm sp-band state to sp-band state transitions dominate hot carrier production while d-band state to sp-band state transitions give the largest contribution for larger nanoparticles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hartree theory calculations of quasiparticle properties in twisted bilayer graphene

A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate quasiparticle properties, such as the band structure, density of states (DOS) and local density of states (LDOS), which are directly accessible in photoemission and tunnelling spectroscopy experiments. We find that quasiparticle properties change significantly upon doping - an effect which is not captured by tight-binding theory. In particular, we observe that the partially occupied bands flatten significantly which enhances the density of states at the Fermi level. We predict a clear signature of this band flattening in the LDOS in the AB/BA regions of tBLG which can be tested in scanning tunneling experiments. We also study the dependence of quasiparticle properties on the dielectric environment of tBLG and discover that these properties are surprisingly robust as a consequence of the strong internal screening. Finally, we present a simple analytical expression for the Hartree potential which enables the determination of quasiparticle properties without the need for self-consistent calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Critical role of device geometry for the phase diagram of twisted bilayer graphene

The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted bilayer graphene (tBLG) on the separation to the metallic gate(s) in two device configurations. Using an atomistic tight-binding model, we determine the Hubbard parameters of the flat bands as a function of gate separation, taking into account the screening from the metallic gate(s), the dielectric spacer layers and the tBLG itself. We determine the critical gate separation at which the Hubbard parameters become smaller than the critical value required for a transition from a correlated insulator state to a (semi-)metallic phase. We show how this critical gate separation depends on twist angle, doping and the device configuration. These calculations may help rationalise the reported differences between recent measurements of tBLG's phase diagram and suggests that correlated insulator states can be screened out in devices with thin dielectric layers.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at $Γ$ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Universal Scaling in Intrinsic Resistivity of Two-Dimensional Metal Borophene

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties such as the emergence of superconductivity and Dirac Fermions. However, quantitative understanding of intrinsic electrical transport of borophene has not been achieved. Here, we report a comprehensive first-principles study on electron-phonon driven intrinsic electrical resistivity (\r{ho}) of emerging borophene structures. We find that the resistivity is highly dependent on the atomic structures and electron density of borophene. Low-temperature resistivity of borophene \r{ho} exhibits a universal scaling behavior, which increases rapidly with temperature T (\r{ho}~T^4), while \r{ho} increases linearly for a large temperature window T > 100 K. It is observed that this universal behavior of intrinsic resistivity is well described by Bloch-Grünesisen model. Different from graphene and conventional three-dimensional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities while the Bloch-Grünesisen temperature is nearly fixed at ~100 K. Our work suggests monolayer boron can serve as an intriguing platform for realizing high-tunable two-dimensional electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Embedding theory for excited states with inclusion of self-consistent environment screening

We present a general embedding theory of electronic excitations of a relatively small, localized system in contact with an extended, chemically complex environment. We demonstrate how to include the screening response of the environment into highly accurate electronic structure calculation of the localized system by means of an effective interaction between the electrons, which contains only screening processes occurring in the environment. For the common case of a localized system which constitutes an inhomogeneity in an otherwise homogeneous system, such as a defect in a crystal, we show how matrix elements of the environment-screened interaction can be calculated from density-functional calculations of the homogeneous system only. We apply our embedding theory to the calculation of excitation energies in crystalline ethylene.

0 citations0 reviewsNo code linkedOpen access