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Researcher profile

Jisung Park

Jisung Park contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Hardware ArchitectureCryptography and SecurityDistributed, Parallel, and Cluster Computing

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Published work

4 published item(s)

preprint2022arXiv

BlockHammer: Preventing RowHammer at Low Cost by Blacklisting Rapidly-Accessed DRAM Rows

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than older chips. Many works show that attackers can exploit RowHammer bit-flips to reliably mount system-level attacks to escalate privilege and leak private data. Therefore, it is critical to ensure RowHammer-safe operation on all DRAM-based systems. Unfortunately, state-of-the-art RowHammer mitigation mechanisms face two major challenges. First, they incur increasingly higher performance and/or area overheads when applied to more vulnerable DRAM chips. Second, they require either proprietary information about or modifications to the DRAM chip design. In this paper, we show that it is possible to efficiently and scalably prevent RowHammer bit-flips without knowledge of or modification to DRAM internals. We introduce BlockHammer, a low-cost, effective, and easy-to-adopt RowHammer mitigation mechanism that overcomes the two key challenges by selectively throttling memory accesses that could otherwise cause RowHammer bit-flips. The key idea of BlockHammer is to (1) track row activation rates using area-efficient Bloom filters and (2) use the tracking data to ensure that no row is ever activated rapidly enough to induce RowHammer bit-flips. By doing so, BlockHammer (1) makes it impossible for a RowHammer bit-flip to occur and (2) greatly reduces a RowHammer attack's impact on the performance of co-running benign applications. Compared to state-of-the-art RowHammer mitigation mechanisms, BlockHammer provides competitive performance and energy when the system is not under a RowHammer attack and significantly better performance and energy when the system is under attack.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Flash-Cosmos: In-Flash Bulk Bitwise Operations Using Inherent Computation Capability of NAND Flash Memory

Bulk bitwise operations, i.e., bitwise operations on large bit vectors, are prevalent in a wide range of important application domains, including databases, graph processing, genome analysis, cryptography, and hyper-dimensional computing. In conventional systems, the performance and energy efficiency of bulk bitwise operations are bottlenecked by data movement between the compute units and the memory hierarchy. In-flash processing (i.e., processing data inside NAND flash chips) has a high potential to accelerate bulk bitwise operations by fundamentally reducing data movement through the entire memory hierarchy. We identify two key limitations of the state-of-the-art in-flash processing technique for bulk bitwise operations; (i) it falls short of maximally exploiting the bit-level parallelism of bulk bitwise operations; (ii) it is unreliable because it does not consider the highly error-prone nature of NAND flash memory. We propose Flash-Cosmos (Flash Computation with One-Shot Multi-Operand Sensing), a new in-flash processing technique that significantly increases the performance and energy efficiency of bulk bitwise operations while providing high reliability. Flash-Cosmos introduces two key mechanisms that can be easily supported in modern NAND flash chips: (i) Multi-Wordline Sensing (MWS), which enables bulk bitwise operations on a large number of operands with a single sensing operation, and (ii) Enhanced SLC-mode Programming (ESP), which enables reliable computation inside NAND flash memory. We demonstrate the feasibility of performing bulk bitwise operations with high reliability in Flash-Cosmos by testing 160 real 3D NAND flash chips. Our evaluation shows that Flash-Cosmos improves average performance and energy efficiency by 3.5x/32x and 3.3x/95x, respectively, over the state-of-the-art in-flash/outside-storage processing techniques across three real-world applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby rows. Recent DRAM chips are more vulnerable to RowHammer: with technology node scaling, the minimum number of activate-precharge cycles to induce a RowHammer bit flip reduces and the RowHammer bit error rate increases. Therefore, it is critical to develop effective and scalable approaches to protect modern DRAM systems against RowHammer. To enable such solutions, it is essential to develop a deeper understanding of the RowHammer vulnerability of modern DRAM chips. However, even though the voltage toggling on a wordline is a key determinant of RowHammer vulnerability, no prior work experimentally demonstrates the effect of wordline voltage (VPP) on the RowHammer vulnerability. Our work closes this gap in understanding. This is the first work to experimentally demonstrate on 272 real DRAM chips that lowering VPP reduces a DRAM chip's RowHammer vulnerability. We show that lowering VPP 1) increases the number of activate-precharge cycles needed to induce a RowHammer bit flip by up to 85.8% with an average of 7.4% across all tested chips and 2) decreases the RowHammer bit error rate by up to 66.9% with an average of 15.2% across all tested chips. At the same time, reducing VPP marginally worsens a DRAM cell's access latency, charge restoration, and data retention time within the guardbands of system-level nominal timing parameters for 208 out of 272 tested chips. We conclude that reducing VPP is a promising strategy for reducing a DRAM chip's RowHammer vulnerability without requiring modifications to DRAM chips.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

CLR-DRAM: A Low-Cost DRAM Architecture Enabling Dynamic Capacity-Latency Trade-Off

DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce DRAM access latency, their reduced storage capacities hinder the performance of workloads that need large memory capacity. Because the capacity-latency trade-off is fixed at design time, previous works cannot achieve maximum performance under very different and dynamic workload demands. This paper proposes Capacity-Latency-Reconfigurable DRAM (CLR-DRAM), a new DRAM architecture that enables dynamic capacity-latency trade-off at low cost. CLR-DRAM allows dynamic reconfiguration of any DRAM row to switch between two operating modes: 1) max-capacity mode, where every DRAM cell operates individually to achieve approximately the same storage density as a density-optimized commodity DRAM chip and 2) high-performance mode, where two adjacent DRAM cells in a DRAM row and their sense amplifiers are coupled to operate as a single low-latency logical cell driven by a single logical sense amplifier. We implement CLR-DRAM by adding isolation transistors in each DRAM subarray. Our evaluations show that CLR-DRAM can improve system performance and DRAM energy consumption by 18.6% and 29.7% on average with four-core multiprogrammed workloads. We believe that CLR-DRAM opens new research directions for a system to adapt to the diverse and dynamically changing memory capacity and access latency demands of workloads.

0 citations0 reviewsNo code linkedOpen access