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Researcher profile

Minesh Patel

Minesh Patel contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Hardware ArchitectureCryptography and Security

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Published work

10 published item(s)

preprint2022arXiv

A Case for Transparent Reliability in DRAM Systems

Today's systems have diverse needs that are difficult to address using one-size-fits-all commodity DRAM. Unfortunately, although system designers can theoretically adapt commodity DRAM chips to meet their particular design goals (e.g., by reducing access timings to improve performance, implementing system-level RowHammer mitigations), we observe that designers today lack sufficient insight into commodity DRAM chips' reliability characteristics to implement these techniques in practice. In this work, we make a case for DRAM manufacturers to provide increased transparency into key aspects of DRAM reliability (e.g., basic chip design properties, testing strategies). Doing so enables system designers to make informed decisions to better adapt commodity DRAM to meet modern systems' needs while preserving its cost advantages. To support our argument, we study four ways that system designers can adapt commodity DRAM chips to system-specific design goals: (1) improving DRAM reliability; (2) reducing DRAM refresh overheads; (3) reducing DRAM access latency; and (4) mitigating RowHammer attacks. We observe that adopting solutions for any of the four goals requires system designers to make assumptions about a DRAM chip's reliability characteristics. These assumptions discourage system designers from using such solutions in practice due to the difficulty of both making and relying upon the assumption. We identify DRAM standards as the root of the problem: current standards rigidly enforce a fixed operating point with no specifications for how a system designer might explore alternative operating points. To overcome this problem, we introduce a two-step approach that reevaluates DRAM standards with a focus on transparency of DRAM reliability so that system designers are encouraged to make the most of commodity DRAM technology for both current and future DRAM chips.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

BlockHammer: Preventing RowHammer at Low Cost by Blacklisting Rapidly-Accessed DRAM Rows

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than older chips. Many works show that attackers can exploit RowHammer bit-flips to reliably mount system-level attacks to escalate privilege and leak private data. Therefore, it is critical to ensure RowHammer-safe operation on all DRAM-based systems. Unfortunately, state-of-the-art RowHammer mitigation mechanisms face two major challenges. First, they incur increasingly higher performance and/or area overheads when applied to more vulnerable DRAM chips. Second, they require either proprietary information about or modifications to the DRAM chip design. In this paper, we show that it is possible to efficiently and scalably prevent RowHammer bit-flips without knowledge of or modification to DRAM internals. We introduce BlockHammer, a low-cost, effective, and easy-to-adopt RowHammer mitigation mechanism that overcomes the two key challenges by selectively throttling memory accesses that could otherwise cause RowHammer bit-flips. The key idea of BlockHammer is to (1) track row activation rates using area-efficient Bloom filters and (2) use the tracking data to ensure that no row is ever activated rapidly enough to induce RowHammer bit-flips. By doing so, BlockHammer (1) makes it impossible for a RowHammer bit-flip to occur and (2) greatly reduces a RowHammer attack's impact on the performance of co-running benign applications. Compared to state-of-the-art RowHammer mitigation mechanisms, BlockHammer provides competitive performance and energy when the system is not under a RowHammer attack and significantly better performance and energy when the system is under attack.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Enabling Effective Error Mitigation in Memory Chips That Use On-Die Error-Correcting Codes

Improvements in main memory storage density are primarily driven by process technology scaling, which negatively impacts reliability by exacerbating various circuit-level error mechanisms. To compensate for growing error rates, both memory manufacturers and consumers use error-mitigation mechanisms that improve manufacturing yield and allow system designers to meet reliability targets. Developing effective error mitigations requires understanding the errors' characteristics (e.g., worst-case behavior, statistical properties). Unfortunately, we observe that proprietary on-die Error-Correcting Codes (ECC) used in modern memory chips introduce new challenges to efficient error mitigation by obfuscating CPU-visible error characteristics in an unpredictable, ECC-dependent manner. This dissertation builds a detailed understanding of how on-die ECC obfuscates the statistical properties of main memory error mechanisms using a combination of real-chip experiments and statistical analyses. We experimentally study memory errors, examine how on-die ECC obfuscates their statistical characteristics, and develop new testing techniques to overcome the obfuscation. Our results show that the obfuscated error characteristics can be recovered using new memory testing techniques that exploit the interaction between on-die ECC and the statistical characteristics of memory error mechanisms to expose physical cell behavior. We conclude by discussing the critical need for transparency in DRAM reliability characteristics in order to enable DRAM consumers to better understand and adapt commodity DRAM chips to their system-specific needs. We hope and believe that the analysis, techniques, and results we present in this dissertation will enable the community to better understand and tackle current and future reliability challenges as well as adapt commodity memory to new advantageous applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby rows. Recent DRAM chips are more vulnerable to RowHammer: with technology node scaling, the minimum number of activate-precharge cycles to induce a RowHammer bit flip reduces and the RowHammer bit error rate increases. Therefore, it is critical to develop effective and scalable approaches to protect modern DRAM systems against RowHammer. To enable such solutions, it is essential to develop a deeper understanding of the RowHammer vulnerability of modern DRAM chips. However, even though the voltage toggling on a wordline is a key determinant of RowHammer vulnerability, no prior work experimentally demonstrates the effect of wordline voltage (VPP) on the RowHammer vulnerability. Our work closes this gap in understanding. This is the first work to experimentally demonstrate on 272 real DRAM chips that lowering VPP reduces a DRAM chip's RowHammer vulnerability. We show that lowering VPP 1) increases the number of activate-precharge cycles needed to induce a RowHammer bit flip by up to 85.8% with an average of 7.4% across all tested chips and 2) decreases the RowHammer bit error rate by up to 66.9% with an average of 15.2% across all tested chips. At the same time, reducing VPP marginally worsens a DRAM cell's access latency, charge restoration, and data retention time within the guardbands of system-level nominal timing parameters for 208 out of 272 tested chips. We conclude that reducing VPP is a promising strategy for reducing a DRAM chip's RowHammer vulnerability without requiring modifications to DRAM chips.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Are We Susceptible to Rowhammer? An End-to-End Methodology for Cloud Providers

Cloud providers are concerned that Rowhammer poses a potentially critical threat to their servers, yet today they lack a systematic way to test whether the DRAM used in their servers is vulnerable to Rowhammer attacks. This paper presents an end-to-end methodology to determine if cloud servers are susceptible to these attacks. With our methodology, a cloud provider can construct worst-case testing conditions for DRAM. We apply our methodology to three classes of servers from a major cloud provider. Our findings show that none of the CPU instruction sequences used in prior work to mount Rowhammer attacks create worst-case DRAM testing conditions. To address this limitation, we develop an instruction sequence that leverages microarchitectural side-effects to ``hammer'' DRAM at a near-optimal rate on modern Intel Skylake and Cascade Lake platforms. We also design a DDR4 fault injector that can reverse engineer row adjacency for any DDR4 DIMM. When applied to our cloud provider's DIMMs, we find that DRAM rows do not always follow a linear map.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Bit-Exact ECC Recovery (BEER): Determining DRAM On-Die ECC Functions by Exploiting DRAM Data Retention Characteristics

Increasing single-cell DRAM error rates have pushed DRAM manufacturers to adopt on-die error-correction coding (ECC), which operates entirely within a DRAM chip to improve factory yield. The on-die ECC function and its effects on DRAM reliability are considered trade secrets, so only the manufacturer knows precisely how on-die ECC alters the externally-visible reliability characteristics. Consequently, on-die ECC obstructs third-party DRAM customers (e.g., test engineers, experimental researchers), who typically design, test, and validate systems based on these characteristics. To give third parties insight into precisely how on-die ECC transforms DRAM error patterns during error correction, we introduce Bit-Exact ECC Recovery (BEER), a new methodology for determining the full DRAM on-die ECC function (i.e., its parity-check matrix) without hardware tools, prerequisite knowledge about the DRAM chip or on-die ECC mechanism, or access to ECC metadata (e.g., error syndromes, parity information). BEER exploits the key insight that non-intrusively inducing data-retention errors with carefully-crafted test patterns reveals behavior that is unique to a specific ECC function. We use BEER to identify the ECC functions of 80 real LPDDR4 DRAM chips with on-die ECC from three major DRAM manufacturers. We evaluate BEER's correctness in simulation and performance on a real system to show that BEER is effective and practical across a wide range of on-die ECC functions. To demonstrate BEER's value, we propose and discuss several ways that third parties can use BEER to improve their design and testing practices. As a concrete example, we introduce and evaluate BEEP, the first error profiling methodology that uses the known on-die ECC function to recover the number and bit-exact locations of unobservable raw bit errors responsible for observable post-correction errors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

CLR-DRAM: A Low-Cost DRAM Architecture Enabling Dynamic Capacity-Latency Trade-Off

DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce DRAM access latency, their reduced storage capacities hinder the performance of workloads that need large memory capacity. Because the capacity-latency trade-off is fixed at design time, previous works cannot achieve maximum performance under very different and dynamic workload demands. This paper proposes Capacity-Latency-Reconfigurable DRAM (CLR-DRAM), a new DRAM architecture that enables dynamic capacity-latency trade-off at low cost. CLR-DRAM allows dynamic reconfiguration of any DRAM row to switch between two operating modes: 1) max-capacity mode, where every DRAM cell operates individually to achieve approximately the same storage density as a density-optimized commodity DRAM chip and 2) high-performance mode, where two adjacent DRAM cells in a DRAM row and their sense amplifiers are coupled to operate as a single low-latency logical cell driven by a single logical sense amplifier. We implement CLR-DRAM by adding isolation transistors in each DRAM subarray. Our evaluations show that CLR-DRAM can improve system performance and DRAM energy consumption by 18.6% and 29.7% on average with four-core multiprogrammed workloads. We believe that CLR-DRAM opens new research directions for a system to adapt to the diverse and dynamically changing memory capacity and access latency demands of workloads.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

FIGARO: Improving System Performance via Fine-Grained In-DRAM Data Relocation and Caching

DRAM Main memory is a performance bottleneck for many applications due to the high access latency. In-DRAM caches work to mitigate this latency by augmenting regular-latency DRAM with small-but-fast regions of DRAM that serve as a cache for the data held in the regular-latency region of DRAM. While an effective in-DRAM cache can allow a large fraction of memory requests to be served from a fast DRAM region, the latency savings are often hindered by inefficient mechanisms for relocating copies of data into and out of the fast regions. Existing in-DRAM caches have two sources of inefficiency: (1) the data relocation granularity is an entire multi-kilobyte row of DRAM; and (2) because the relocation latency increases with the physical distance between the slow and fast regions, multiple fast regions are physically interleaved among slow regions to reduce the relocation latency, resulting in increased hardware area and manufacturing complexity. We propose a new substrate, FIGARO, that uses existing shared global buffers among subarrays within a DRAM bank to provide support for in-DRAM data relocation across subarrays at the granularity of a single cache block. FIGARO has a distance-independent latency within a DRAM bank, and avoids complex modifications to DRAM. Using FIGARO, we design a fine-grained in-DRAM cache called FIGCache. The key idea of FIGCache is to cache only small, frequently-accessed portions of different DRAM rows in a designated region of DRAM. By caching only the parts of each row that are expected to be accessed in the near future, we can pack more of the frequently-accessed data into FIGCache, and can benefit from additional row hits in DRAM. Our evaluations show that FIGCache improves the average performance of a system using DDR4 DRAM by 16.3% and reduces average DRAM energy consumption by 7.8% for 8-core workloads, over a conventional system without in-DRAM caching.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Revisiting RowHammer: An Experimental Analysis of Modern DRAM Devices and Mitigation Techniques

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM modules (60x DDR3, 110x DDR4, and 130x LPDDR4) with RowHammer protection mechanisms disabled, spanning multiple different technology nodes from across each of the three major DRAM manufacturers. Our studies definitively show that newer DRAM chips are more vulnerable to RowHammer: as device feature size reduces, the number of activations needed to induce a RowHammer bit flip also reduces, to as few as 9.6k (4.8k to two rows each) in the most vulnerable chip we tested. We evaluate five state-of-the-art RowHammer mitigation mechanisms using cycle-accurate simulation in the context of real data taken from our chips to study how the mitigation mechanisms scale with chip vulnerability. We find that existing mechanisms either are not scalable or suffer from prohibitively large performance overheads in projected future devices given our observed trends of RowHammer vulnerability. Thus, it is critical to research more effective solutions to RowHammer.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The Virtual Block Interface: A Flexible Alternative to the Conventional Virtual Memory Framework

Computers continue to diversify with respect to system designs, emerging memory technologies, and application memory demands. Unfortunately, continually adapting the conventional virtual memory framework to each possible system configuration is challenging, and often results in performance loss or requires non-trivial workarounds. To address these challenges, we propose a new virtual memory framework, the Virtual Block Interface (VBI). We design VBI based on the key idea that delegating memory management duties to hardware can reduce the overheads and software complexity associated with virtual memory. VBI introduces a set of variable-sized virtual blocks (VBs) to applications. Each VB is a contiguous region of the globally-visible VBI address space, and an application can allocate each semantically meaningful unit of information (e.g., a data structure) in a separate VB. VBI decouples access protection from memory allocation and address translation. While the OS controls which programs have access to which VBs, dedicated hardware in the memory controller manages the physical memory allocation and address translation of the VBs. This approach enables several architectural optimizations to (1) efficiently and flexibly cater to different and increasingly diverse system configurations, and (2) eliminate key inefficiencies of conventional virtual memory. We demonstrate the benefits of VBI with two important use cases: (1) reducing the overheads of address translation (for both native execution and virtual machine environments), as VBI reduces the number of translation requests and associated memory accesses; and (2) two heterogeneous main memory architectures, where VBI increases the effectiveness of managing fast memory regions. For both cases, VBI significanttly improves performance over conventional virtual memory.

0 citations0 reviewsNo code linkedOpen access