Source author record

Jino Im

Jino Im appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

Catalog footprint

What is connected

3works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2018arXiv

Harnessing the giant out-of-plane Rashba effect and the nanoscale persistent spin helix via ferroelectricity in SnTe thin films

A non-vanishing electric field inside a non-centrosymmetric bulk crystal transforms into a momentum- dependent magnetic field, namely, a spin-orbit field (SOF). SOFs are of great use in spintronics because they enable spin manipulation via the electric field. At the same time, however, spintronic applications are severely limited by the SOF, as electrons traversing the SOF easily lose their spin information. Here, we propose that in-plane ferroelectricity in (001)-oriented SnTe thin films harness the Janus-faced SOF in a reconcilable way to enable electrical spin controllability and suppress spin dephasing. The in-plane ferroelectricity produces a unidirectional out-of-plane Rashba SOF that can host a long-lived helical spin mode known as a persistent spin helix (PSH). Through direct coupling between the inversion asymmetry and the SOF, the ferroelectric switching reverses the out-of-plane Rashba SOF, giving rise to a maximally field-tunable PSH. Furthermore, the giant out- of-plane Rashba SOF seen in the SnTe thin films is linked to the nano-sized PSH, potentially reducing spintronic device sizes to the nanoscale. We combine the two ferroelectric-coupled degrees of freedom, longitudinal charge and transverse PSH, to design intersectional electro-spintronic transistors governed by non-volatile ferroelectric switching within nanoscale lateral and atomic-thick vertical dimensions.

preprint2015arXiv

Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization

Until recently, spin-polarization in nonmagnetic materials was the exclusive territory of non- centrosymmetric structures. It was recently shown that a form of hidden spin polarization (named the Rashba-2 or R-2 effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of materials that might be considered for spin-polarization spintronic applications to include the hitherto forbidden spintronic compound that belong to centrosymetric symmetries. Here we take the necessary steps to transition from such general, material-agnostic condensed matter theory arguments to material-specific design principles that could aid future laboratory search of R-2 materials. Specifically, we (i) classify different prototype layered structures that have been broadly studied in the literature in terms of their expected R-2 behavior, including the Bi2Se3-structure type (a prototype topological insulator), MoS2-structure type (a prototype valleytronic compound) and LaBiOS2-structure type (a host of superconductivity upon doping); (ii) formulate the properties that ideal R-2 compounds should have in terms of combination of their global unit cell symmetries with specific point group symmetries of their constituent sectors; (iii) use first-principles band theory to search for compounds from the prototype family of LaOBiS2-type structures that satisfy these R-2 design metrics. We initially consider both stable and hypothetical compounds to establish an understanding of trends of R-2 with composition, and then indicate the predictions that are expected to be stable and synthesizable. We predict large spin splittings (up to ~ 200 meV for holes in LaOBiTe2) as well as surface Rashba states. Experimental testing of such predictions is called for.

preprint2014arXiv

Spin-orbital Entangled Molecular $j_{\rm eff}$ States in Lacunar Spinel Compounds

The entanglement of the spin and orbital degrees of freedom through the spin-orbit coupling has been actively studied in condensed matter physics. In several iridium-oxide systems, the spin-orbital entangled state, identified by the effective angular momentum $j_{\rm eff}$, can host novel quantum phases with the help of electron correlations. Here, we show that a series of lacunar spinel compounds, Ga$M_4X_8$ ($M$ = Nb, Mo, Ta, and W and $X$ = S, Se, and Te), gives rise to a $\textit{molecular}$ $j_{\rm eff}$ state as a new spin-orbital composite on which the low energy effective Hamiltonian is based. A wide range of electron correlations is accessible by tuning the bandwidth under external and/or chemical pressure, enabling us to investigate the interesting cooperation between spin-orbit coupling and electron correlations. As illustrative examples, a two-dimensional topological insulating phase and an anisotropic spin Hamiltonian are investigated in the weak and strong coupling regimes, respectively. Our finding can provide an ideal platform for exploring $j_{\rm eff}$ physics and the resulting emergent phenomena.