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Researcher profile

Jinhwan Lee

Jinhwan Lee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciArtificial IntelligenceMachine Learningphysics.chem-phcond-mat.str-elcs.CYHuman-Computer Interaction

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Published work

5 published item(s)

preprint2021arXiv

Deep Attentive Study Session Dropout Prediction in Mobile Learning Environment

Student dropout prediction provides an opportunity to improve student engagement, which maximizes the overall effectiveness of learning experiences. However, researches on student dropout were mainly conducted on school dropout or course dropout, and study session dropout in a mobile learning environment has not been considered thoroughly. In this paper, we investigate the study session dropout prediction problem in a mobile learning environment. First, we define the concept of the study session, study session dropout and study session dropout prediction task in a mobile learning environment. Based on the definitions, we propose a novel Transformer based model for predicting study session dropout, DAS: Deep Attentive Study Session Dropout Prediction in Mobile Learning Environment. DAS has an encoder-decoder structure which is composed of stacked multi-head attention and point-wise feed-forward networks. The deep attentive computations in DAS are capable of capturing complex relations among dynamic student interactions. To the best of our knowledge, this is the first attempt to investigate study session dropout in a mobile learning environment. Empirical evaluations on a large-scale dataset show that DAS achieves the best performance with a significant improvement in area under the receiver operating characteristic curve compared to baseline models.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Crossover between Photochemical and Photothermal Oxidations of Atomically Thin Magnetic Semiconductor CrPS4

Many two-dimensional (2D) semiconductors represented by transition metal dichalcogenides have tunable optical bandgaps in the visible or near IR-range standing as a promising candidate for optoelectronic devices. Despite this potential, however, their photoreactions are not well understood or controversial in the mechanistic details. In this work, we report a unique thickness-dependent photoreaction sensitivity and a switchover between two competing reaction mechanisms in atomically thin chromium thiophosphate (CrPS4), a two-dimensional antiferromagnetic semiconductor. CrPS4 showed a threshold power density 2 orders of magnitude smaller than that for MoS2 obeying a photothermal reaction route. In addition, reaction cross section quantified with Raman spectroscopy revealed distinctive power dependences in the low and high power regimes. On the basis of optical in situ thermometric measurements and control experiments against O2, water, and photon energy, we proposed a photochemical oxidation mechanism involving singlet O2 in the low power regime with a photothermal route for the other. We also demonstrated a highly effective encapsulation with Al2O3 as a protection against the destructive photoinduced and ambient oxidations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interlayer magnetism in Fe3-xGeTe2

Fe$_{3-x}$GeTe$_2$ is a layered van der Waals magnetic material with a relatively high ordering temperature and large anisotropy. While most studies have concluded the interlayer ordering to be ferromagnetic, there have also been reports of interlayer antiferromagnetism in Fe$_{3-x}$GeTe$_2$. Here, we investigate the interlayer magnetic ordering by neutron diffraction experiments, scanning tunneling microscopy (STM) and spin-polarized STM measurements, density functional theory plus U calculations and STM simulations. We conclude that the layers of Fe$_{3-x}$GeTe$_2$ are coupled ferromagnetically and that in order to capture the magnetic and electronic properties of Fe$_{3-x}$GeTe$_2$ within density functional theory, Hubbard U corrections need to be taken into account.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Prescribing Deep Attentive Score Prediction Attracts Improved Student Engagement

Intelligent Tutoring Systems (ITSs) have been developed to provide students with personalized learning experiences by adaptively generating learning paths optimized for each individual. Within the vast scope of ITS, score prediction stands out as an area of study that enables students to construct individually realistic goals based on their current position. Via the expected score provided by the ITS, a student can instantaneously compare one's expected score to one's actual score, which directly corresponds to the reliability that the ITS can instill. In other words, refining the precision of predicted scores strictly correlates to the level of confidence that a student may have with an ITS, which will evidently ensue improved student engagement. However, previous studies have solely concentrated on improving the performance of a prediction model, largely lacking focus on the benefits generated by its practical application. In this paper, we demonstrate that the accuracy of the score prediction model deployed in a real-world setting significantly impacts user engagement by providing empirical evidence. To that end, we apply a state-of-the-art deep attentive neural network-based score prediction model to Santa, a multi-platform English ITS with approximately 780K users in South Korea that exclusively focuses on the TOEIC (Test of English for International Communications) standardized examinations. We run a controlled A/B test on the ITS with two models, respectively based on collaborative filtering and deep attentive neural networks, to verify whether the more accurate model engenders any student engagement. The results conclude that the attentive model not only induces high student morale (e.g. higher diagnostic test completion ratio, number of questions answered, etc.) but also encourages active engagement (e.g. higher purchase rate, improved total profit, etc.) on Santa.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4

Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffractions. Transmission electron microscopy showed that preferentially-cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy for the first time and exhibited significant dependence on thickness of crystals exfoliated down to single layer. Optical absorption determined by reflectance contrast was dominated by d-d type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness-dependence and hinted a high photochemical activity for single layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this novel magnetic semiconductor.

0 citations0 reviewsNo code linkedOpen access