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Researcher profile

Jingwei Mu

Jingwei Mu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

3 published item(s)

preprint2021arXiv

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for developments of quantum computation and quantum simulation technologies.

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preprint2021arXiv

Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major challenge. Here, we demonstrate realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire with fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are found for the QQD. It is shown that these current lines can be individually assigned as arising from resonant electron transport through the energy levels of different QDs. Benefited from the excellent gate tunability, we also demonstrate tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all the four QDs are energetically on resonance, respectively, with the fermi level of source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on the model show good agreements with the experiments. Our work presents a solid experimental evidence that narrow bandgap semiconductor nanowires multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations for complex many-body systems.

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preprint2020arXiv

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the nanowire TQD are studied by measurements of the direct transport signals of the TQD and by detection of the charge state transitions in the TQD via the nanowire QD sensor. Excellent agreements in the charge stability diagrams of the TQD obtained by the direct transport measurements and by the charge-state transition detection measurements are achieved. It is shown that the charge stability diagrams are featured by three groups of charge state transition lines of different slopes, corresponding to the changes in the electron occupation numbers of the three individual QDs in the TQD. It is also shown that the integrated nanowire QD sensor is highly sensitive and can detect the charge state transitions in the cases where the direct transport signals of the TQD are too weak to be measurable. Tuning to a regime, where all the three QDs in the TQD are close to be on resonance with the Fermi level of the source and drain reservoirs and co-existence of triple and quadruple points becomes possible, has also been demonstrated with the help of the charge sensor in the region where the direct transport signals of the TQD are hardly visible.

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