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Jinbin Li

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Published work

5 published item(s)

preprint2025arXiv

Emergence of quantum spin liquid and spin-flop phase in Kitaev antiferromagnets in a [111] magnetic field

Kitaev magnets have emerged as pivotal systems for investigating frustrated magnetism, providing a unique platform to explore quantum phases governed by the interplay between bond-dependent anisotropy and external magnetic fields. However, the quantum phase diagrams, particularly near the dominant antiferromagnetic Kitaev regime, remain puzzling despite extensive studies. In this work, we perform unbiased exact diagonalization calculations of the Kitaev-$Γ$ model in a [111] magnetic field on a $C_{6}$-symmetric 24-site cluster. By calculating the $\mathbb{Z}_2$ flux density and the topological entanglement entropy, we reveal multiple phase transitions and identify signatures of both scalar and vector chiral orders in the intermediate-field regime between the Kitaev spin liquid and the polarized phase. As the negative $Γ$ interaction increases, we discover a proximate quantum spin liquid featured by a three-peak specific heat and a spin-flop phase at a moderate magnetic field. Our findings provide insight into the field-induced intermediate phases in the antiferromagnetic Kitaev model and pave the way for the hunt for emergent phases in real materials.

preprint2011arXiv

Phase separation of a two-component dipolar Bose-Einstein condensate in the quasi-one-dimensional and quasi-two-dimensional regime

We consider a two-component Bose-Einstein condensate, which contains atoms with magnetic dipole moments aligned along the $z$ direction (labeled as component 1) and nonmagnetic atoms (labeled as component 2). The problem is studied by means of exact numerical simulations. The effects of dipole-dipole interaction on phase separations are investigated. It is shown that, in the quasi-one-dimensional regime, the atoms in component 2 are squeezed out when the dimensionless dipolar strength parameter is small, whereas the atoms in component 1 are pushed out instead when the parameter is large. This is in contrast to the phenomena in the quasi-two-dimensional regime. These two components are each kicked out by the other in the quasi-one-dimensional regime and this phenomenon is discussed as well.

preprint2006arXiv

Interaction broadening of Wannier functions and Mott transitions in atomic BEC

Superfluid to Mott-insulator transitions in atomic BEC in optical lattices are investigated for the case of number of atoms per site larger than one. To account for mean field repulsion between the atoms in each well, we construct an orthogonal set of Wannier functions. The resulting hopping amplitude and on-site interaction may be substantially different from those calculated with single-atom Wannier functions. As illustrations of the approach we consider lattices of various dimensionality and different mean occupations. We find that in three-dimensional optical lattices the correction to the critical lattice depth is significant to be measured experimentally even for small number of atoms. Finally, we discuss validity of the single band model.

preprint2004arXiv

Luttinger liquid with strong spin-orbital coupling and Zeeman splitting in quantum wires

We study a one-dimensional interacting electron gas with the strong Rashba spin-orbit coupling and Zeeman splitting in a quantum well. A bosonization theory is developed for this system. The tunneling current may deviate from a simple power law which is that in an ordinary Luttinger liquid. The microscopic interacting coupling and the spin-orbital parameter may be measured by varying the external magnetic field in the tunneling experiment.

preprint2003arXiv

Electron space charge effect on spin injection into semiconductors

We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration.