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Jin-Hua Gao

Jin-Hua Gao contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2023arXiv

Magnon corner states in twisted bilayer honeycomb magnets

Search for higher-order topological insulators, characterized by topologically protected gapless boundary states of codimension higher than one, in bosonic systems has attracted growing interest. Here, we establish twisted bilayer honeycomb magnets as a new platform for hosting second-order topological magnon insulators (SOTMIs) without fine-tuning. We employ a simple, minimal Heisenberg spin model to describe misaligned bilayer sheets of honeycomb ferromagnetic magnets with a large commensurate twist angle. We found that the higher-order topology in this bilayer system shows a significant dependence on the interlayer exchange coupling. The SOTMI, featuring topologically protected magnon corner states, appears for ferromagnetic interlayer couplings, while the twisted bilayer exhibits a nodal phase in the case of antiferromagnetic interlayer coupling.

preprint2021arXiv

Gate-induced half-metals in Bernal stacked graphene multilayer

Recent experiments indicate that the Bernal stacked graphene multilayer (BGM) have an interaction induced gapped (or pseudo gapped) ground state. Here, we propose that, due to the electron correlation, the BGM can be induced into a half metallic phase by applying a vertical electric field and doping. The half metallic states in even-layer and odd-layer BGMs have totally different behaviors, due to their different band structures. We systematically calculate the graphene tetralayer (4L-BGM) and trilayer (3L-BGM) as the typical examples of the even-layer and odd-layer BGMs, respectively. In 4L-BGM, we find an interesting phenomenon of electric field induced inversion of the spin-polarized bands. Namely, in the half metallic phase, the spin polarization of the conducting channel and the net magnetic moment are inversed when the applied electric field exceeds a critical value. In 3L-BGM, a remarkable feature is that the inequivalence of the the two sublattices will intrinsically break the degeneracy of the the spin-up and spin-down bands even in the zero electric field case. Our results suggest that 4L-BGM should be an ideal platform to detect the proposed half metallic phase in BGM systems.

preprint2021arXiv

Making artificial $\textit{p}_{x,y}$-orbital honeycomb electron lattice on metal surface

We theoretically demonstrate that the desired $p_{x,y}$-orbital honeycomb electron lattice can be readily realized by arranging CO molecules into a hexagonal lattice on Cu(111) surface with scanning tunneling microscopy (STM). The electronic structure of the Cu surface states in the presence of CO molecules is calculated with various methods, \textit{i.e.}~DFT simulations, muffin-tin potential model and tight-binding model. Our calculations indicate that, by measuring the LDOS pattern using STM, the $p$-orbital surface bands can be immediately identified in experiment. We also give an analytic interpretation of the $p$-orbital LDOS pattern with $k \cdot p$ method. Meanwhile, different from the case of graphene, the $p$-orbital honeycomb lattice has two kinds of edge states, which can also be directly observed in STM experiment. Our work points out a feasible way to construct a $p_{x,y}$-orbital honeycomb electron lattice in a real system, which may have exotic properties, such as Wigner crystal, ferromagnetism, $f$-wave superconductivity, quantum anomalous Hall (QAH) effect. Furthermore, we also propose a simple way to calculate and identify the modified Cu surface bands in the Cu/CO systems with the DFT simulations. Considering the recent works about $p$-orbital square lattice in similar systems [M. R. Slot, \textit{et al.} Nat. Phys. \textbf{13}, 672 (2017); Liang Ma, \textit{et al.} Phys. Rev. B \textbf{99}, 205403 (2019)], our work once again illustrates that the artificial electron lattice on metal surface is an ideal platform to study the orbital physics in a controllable way.

preprint2021arXiv

Moire Band Structures of the Double twisted Few Layer Graphene

Very recently, unconventional superconductivity has been observed in the double twisted trilayer graphene (TLG), where three monolayer graphene (MLG) are stacked on top of each other with two twist angles [J. M. Park, et al., Nature 590, 249 (2021); Z. Hao, et al., Science 371, 1133 (2021); X. Zhang, et al., Phys. Rev. Lett.127, 166802 (2021)]. When some of MLGs in the double twisted TLG are replaced by bilayer graphene (BLG), we get a new family of double twisted moire heterostructure, namely double twisted few layer graphene (DTFLG). In this work, we theoretically investigate the moire band structures of the DTFLGs with diverse arrangements of MLG and BLG. We find that, depending on the relative rotation direction of the two twist angles (alternate or chiral twist) and the middle van der Waals (vdW) layer (MLG or BLG), a general (X+Y+Z)-DTFLG can be classified into four categories, i.e. (X+1+Z)-ATFLG, (X+2+Z)-ATFLG, (X+1+Z)-CTFLG and (X+2+Z)-CTFLG, each of which has its own unique band structure. Here, X, Y, Z denote the three vdW layers, i.e. MLG or BLG. Interestingly, the (X+1+Z)-ATFLGs have a pair of perfect flat bands at the magic angle about $1.54^\circ$ coexisting with a pair of linear or parabolic bands, which is quite like the double twisted TLG. Meanwhile, when the twist angle is smaller than a "magic angle" $1.70^\circ$, the (X+2+Z)-CTFLGs can have two isolated narrow bands at $E_f$ with band width less than 5 meV. The influence of electric field and the topological features of the moire bands have been studied as well. Our work indicates that the DTFLGs, especially the (X+1+Z)-ATFLG and (X+2+Z)-CTFLG, are promising platforms to study the moire flat band induced novel correlation and topological effects.

preprint2019arXiv

Higher-Order Topological Insulators in Quasicrystals

Current understanding of higher-order topological insulators (HOTIs) is based primarily on crystalline materials. Here, we propose that HOTIs can be realized in quasicrystals. Specifically, we show that two distinct types of second-order topological insulators (SOTIs) can be constructed on the quasicrystalline lattices (QLs) with different tiling patterns. One is derived by using a Wilson mass term to gap out the edge states of the quantum spin Hall insulator on QLs. The other is the quasicrystalline quadrupole insulator (QI) with a quantized quadrupole moment. We reveal some unusual features of the corner states (CSs) in the quasicrystalline SOTIs. We also show that the quasicrystalline QI can be simulated by a designed electrical circuit, where the CSs can be identified by measuring the impedance resonance peak. Our findings not only extend the concept of HOTIs into quasicrystals but also provide a feasible way to detect the topological property of quasicrystals in experiments.

preprint2010arXiv

Giant mesoscopic spin Hall effect on surface of topological insulator

We study mesoscopic spin Hall effect on the surface of topological insulator with a step-function potential. The giant spin polarization induced by a transverse electric current is derived analytically by using McMillan method in the ballistic transport limit, which oscillates across the potential boundary with no confinement from the potential barrier due to the Klein paradox, and should be observable in spin resolved scanning tunneling microscope.