Source author record

Jin-Feng Jia

Jin-Feng Jia appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

25works
7topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

25 published item(s)

preprint2020arXiv

Discovery of segmented Fermi surface induced by Cooper pair momentum

Since the early days of Bardeen-Cooper-Schrieffer theory, it has been predicted that a sufficiently large supercurrent can close the energy gap in a superconductor and creates gapless Bogoliubov quasiparticles through the Doppler shift of quasiparticle energy due to the Cooper pair momentum. In this gapless superconducting state, zero-energy quasiparticles reside on a segment of the normal state Fermi surface, while its remaining part is still gapped. The finite density of states of field-induced quasiparticles, known as the Volovik effect, has been observed in tunneling and specific heat measurements on d- and s-wave superconductors. However, the segmented Fermi surface of a finite-momentum state carrying a supercurrent has never been detected directly. Here we use quasiparticle interference (QPI) technique to image field-controlled Fermi surface of Bi$_2$Te$_3$ thin films proximitized by the superconductor NbSe$_2$. By applying a small in-plane magnetic field, a screening supercurrent is induced which leads to finite-momentum pairing on topological surface states of Bi$_2$Te$_3$. Our measurements and analysis reveal the strong impact of finite Cooper pair momentum on the quasiparticle spectrum, and thus pave the way for STM study of pair density wave and FFLO states in unconventional superconductors.

preprint2016arXiv

Observation of Majorana fermions with spin selective Andreev reflection in the vortex of topological superconductor

Majorana fermion (MF) whose antiparticle is itself has been predicted in condensed matter systems. Signatures of the MFs have been reported as zero energy modes in various systems. More definitive evidences are highly desired to verify the existence of the MF. Very recently, theory has predicted MFs to induce spin selective Andreev reflection (SSAR), a novel magnetic property which can be used to detect the MFs. Here we report the first observation of the SSAR from MFs inside vortices in Bi2Te3/NbSe2 hetero-structure, in which topological superconductivity was previously established. By using spin-polarized scanning tunneling microscopy/spectroscopy (STM/STS), we show that the zero-bias peak of the tunneling differential conductance at the vortex center is substantially higher when the tip polarization and the external magnetic field are parallel than anti-parallel to each other. Such strong spin dependence of the tunneling is absent away from the vortex center, or in a conventional superconductor. The observed spin dependent tunneling effect is a direct evidence for the SSAR from MFs, fully consistent with theoretical analyses. Our work provides definitive evidences of MFs and will stimulate the MFs research on their novel physical properties, hence a step towards their statistics and application in quantum computing.

preprint2016arXiv

Robust topological edge states at the perfect surface step edge of topological insulator ZrTe$_5$

We report an atomic-scale characterization of ZrTe$_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe$_5$ is a two dimensional topological insulator. It is also found that an applied magnetic field induces energetic splitting and spatial separation of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The perfect surface steps and relatively large bandgap make ZrTe$_5$ be a potential candidate for future fundamental studies and device applications.

preprint2015arXiv

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor

preprint2015arXiv

Epitaxial Growth of Two-Dimensional Stanene

Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2. Ge-based germanene was realized by mechanical exfoliation3. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations4, or can support enhanced thermoelectric performance5, topological superconductivity6 and the near-room-temperature quantum anomalous Hall (QAH) effect7. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene.

preprint2015arXiv

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the $\bar{M}$ point besides the two well-known surface bands on the Bi(111) surface. With this new surface band, the bulk valence band and the bulk conduction band of Bi can be connected by the surface states. Our band mapping revealed odd number of Fermi crossings of the surface bands, which provided a direct experimental signature that Bi(111) thin films of a certain thickness on the Bi$_2$Te$_3$(111) substrate can be topologically nontrivial in three dimension.

preprint2014arXiv

Electronic Structures of Black Phosphorus Studied by Angle-resolved Photoemission Spectroscopy

Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic properties of black phosphorus theoretically.

preprint2014arXiv

Fully Gapped s-wave-like Superconducting State and Electronic Structures in the Ir0.95Pd0.05Te2 Single Crystals with Strong Spin-orbital Coupling

Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did comprehensive studies on the superconducting properties and electronic structures of single crystalline Ir0.95Pd0.05Te2 samples. The superconducting gap size, critical fields and coherence length along different directions were experimentally determined. Macroscopic bulk measurements and microscopic low temperature scanning tunneling spectroscopy results suggest that Ir0.95Pd0.05Te2 possesses a BCS-like s-wave state. No sign of zero bias conductance peak were found in the vortex core at 0.4K.

preprint2014arXiv

Orbit- and Atom-Resolved Spin Textures of Intrinsic, Extrinsic and Hybridized Dirac Cone States

Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy measurements, we identify the helical spin textures for three different Dirac cone states in the interfaced systems of a 2D topological insulator (TI) of Bi(111) bilayer and a 3D TI Bi2Se3 or Bi2Te3. The spin texture is found to be the same for the intrinsic Dirac cone of Bi2Se3 or Bi2Te3 surface state, the extrinsic Dirac cone of Bi bilayer state induced by Rashba effect, and the hybridized Dirac cone between the former two states. Further orbit- and atom-resolved analysis shows that s and pz orbits have a clockwise (counterclockwise) spin rotation tangent to the iso-energy contour of upper (lower) Dirac cone, while px and py orbits have an additional radial spin component. The Dirac cone states may reside on different atomic layers, but have the same spin texture. Our results suggest that the unique spin texture of Dirac cone states is a signature property of spin-orbit coupling, independent of topology.

preprint2014arXiv

Superconductivity in single-layer films of FeSe with a transition temperature above 100 K

Recently, interface has been employed to enhance superconductivity in the single-layer FeSe films grown on SrTiO3(001)(STO) with a possible Tc of ~ 80 K, which is nearly ten times of the Tc of bulk FeSe and is above the Tc record of 56 K for the bulk Fe-based superconductors. This work together with those on superconducting oxides interfaces revives the long-standing idea that electron pairing at a two-dimensional (2D) interface between two different materials is a potential path to high transition temperature (Tc) superconductivity. Subsequent angle-resolved photoemission spectroscopy (ARPES) measurements revealed different electronic structure from those of bulk FeSe with a superconducting-like energy gap closing at around 65K. However, previous ex situ electrical transport measurements could only detect the zero-resistance below ~30 K. Here we report the observation of high Tc superconductivity in the FeSe/STO system. By in situ 4-point probe (4PP) electrical transport measurement that can be conducted at an arbitrary position of the FeSe film on STO, we detected superconductivity above 100 K. Our finding makes FeSe/STO the exciting and ideal research platform for higher Tc superconductivity.

preprint2014arXiv

Tuning Structures and Electronic Spectra of Graphene Layers by Tilt Grain Boundaries

Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our results demonstrate that the twisting changes the electronic spectra of Bernal graphene bilayer and graphene trilayers dramatically. We also study quantum-confined twisted graphene bilayer generated between two adjacent tilt grain boundaries and find that the band structure of such a system is still valid even when the number of superstructures is reduced to two in one direction. It implies that the electronic structure of this system is driven by the physics of a single Moiré spot.

preprint2013arXiv

Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator

The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07$μ$B. Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density.

preprint2013arXiv

Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions

Topological insulators (TIs) are a unique class of materials characterized by a surface (edge) Dirac cone state of helical Dirac fermions in the middle of bulk (surface) gap. When the thickness (width) of TIs is reduced, however, interaction between the surface (edge) states will open a gap removing the Dirac cone. Using density function theory calculation, we demonstrate the creation of helical Dirac fermions from interfacing two gapped TI films, a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. The theoretical prediction is directly confirmed by experiment. We further show that the extrinsic helical Dirac fermions consists of predominantly Bi bilayer states, which are created by a giant Rashba effect due to interfacial charge transfer. Our findings provide a promising new method to create novel TI materials by interface engineering.

preprint2013arXiv

Majorana mode in vortex core of Bi2Te3/NbSe2 topological insulator-superconductor heterostructure

Majorana fermions have been intensively studied in recent years for their importance to both fundamental science and potential applications in topological quantum computing1,2. Majorana fermions are predicted to exist in a vortex core of superconducting topological insulators3. However, they are extremely difficult to be distinguished experimentally from other quasiparticle states for the tiny energy difference between Majorana fermions and these states, which is beyond the energy resolution of most available techniques. Here, we overcome the problem by systematically investigating the spatial profile of the Majorana mode and the bound quasiparticle states within a vortex in Bi2Te3/NbSe2. While the zero bias peak in local conductance splits right off the vortex center in conventional superconductors, it splits off at a finite distance ~20nm away from the vortex center in Bi2Te3/NbSe2, primarily due to the Majorana fermion zero mode. While the Majorana mode is destroyed by reducing the distance between vortices, the zero bias peak splits as a conventional superconductor again. This work provides strong evidences of Majorana fermions and also suggests a possible route to manipulating them.

preprint2013arXiv

Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators

Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in TIs. Here, we report the experimental observation of the renormalized quasi-particle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi2Te3 substrate, from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasi-particle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi2Te3 film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi2Se3, where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi2Se3 are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states.

preprint2013arXiv

Topological Superconductor Bi2Te3/NbSe2 heterostructures

Topological superconductors (TSCs) have a full gap in the bulk and gapless surface states consisting of Majorana fermions, which have potential applications in fault-tolerant topological quantum computation. Because TSCs are very rare in nature, an alternative way to study the TSC is to artificially introduce superconductivity into the surface states of a topological insulator (TI) through proximity effect (PE)1-4. Here we report the first experimental realization of the PE induced TSC in Bi2Te3/NbSe2 thin films as demonstrated by the density of states probed using scanning tunneling microscope. We observe Abrikosov vortices and lower energy bound states on the surface of topological insulator and the dependence of superconducting coherence length on the film thickness and magnetic field, which are attributed to the superconductivity in the topological surface states. This work demonstrates the practical feasibility of fabricating a TSC with individual Majorana fermions inside superconducting vortex as predicted in theory and accomplishes the pre-requisite step towards searching for Majorana fermions in the PE induced TSCs.

preprint2012arXiv

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3

Searching for superconducting materials with high transition temperature (TC) is one of the most exciting and challenging fields in physics and materials science. Although superconductivity has been discovered for more than 100 years, the copper oxides are so far the only materials with TC above 77 K, the liquid nitrogen boiling point. Here we report an interface engineering method for dramatically raising the TC of superconducting films. We find that one unit-cell (UC) thick films of FeSe grown on SrTiO3 (STO) substrates by molecular beam epitaxy (MBE) show signatures of superconducting transition above 50 K by transport measurement. A superconducting gap as large as 20 meV of the 1 UC films observed by scanning tunneling microcopy (STM) suggests that the superconductivity could occur above 77 K. The occurrence of superconductivity is further supported by the presence of superconducting vortices under magnetic field. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic study of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

preprint2012arXiv

Interplay between Quantum Size Effect and Strain Effect on Growth of Nanoscale Metal Thin Film

We develop a theoretical framework to investigate the interplay between quantum size effect (QSE) and strain effect on the stability of metal nanofilms. The QSE and strain effect are shown to be coupled through the concept of "quantum electronic stress. First-principles calculations reveal large quantum oscillations in the surface stress of metal nanofilms as a function of film thickness. This adds extrinsically additional strain-coupled quantum oscillations to surface energy of strained metal nanofilms. Our theory enables a quantitative estimation of the amount of strain in experimental samples, and suggests strain be an important factor contributing to the discrepancies between the existing theories and experiments.

preprint2011arXiv

Activated dissociation of O2 on Pb(111) surfaces by Pb adatoms

We investigate the dissociation of O2 on Pb(111) surface using first-principles calculations. It is found that in a practical high-vacuum environment, the adsorption of molecular O2 takes place on clean Pb surfaces only at low temperatures such as 100 K, but the O2 easily desorbs at (elevated) room temperatures. It is further found that the Pb adatoms enhance the molecular adsorption and activate the adsorbed O2 to dissociate during subsequent room-temperature annealing. Our theory explains the observation of a two-step oxidation process on the Pb surfaces by the unique role of Pb adatoms.

preprint2011arXiv

Power-Law Decay of Standing Waves on the Surface of Topological Insulators

We propose a general theory on the standing waves (quasiparticle interference pattern) caused by the scattering of surface states off step edges in topological insulators, in which the extremal points on the constant energy contour of surface band play the dominant role. Experimentally we image the interference patterns on both Bi$_2$Te$_3$ and Bi$_2$Se$_3$ films by measuring the local density of states using a scanning tunneling microscope. The observed decay indices of the standing waves agree excellently with the theoretical prediction: In Bi$_2$Se$_3$, only a single decay index of -3/2 exists; while in Bi$_2$Te$_3$ with strongly warped surface band, it varies from -3/2 to -1/2 and finally to -1 as the energy increases. The -1/2 decay indicates that the suppression of backscattering due to time-reversal symmetry does not necessarily lead to a spatial decay rate faster than that in the conventional two-dimensional electron system. Our formalism can also explain the characteristic scattering wave vectors of the standing wave caused by non-magnetic impurities on Bi$_2$Te$_3$.

preprint2010arXiv

Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.

preprint2010arXiv

Landau Quantization of Massless Dirac Fermions in Topological Insulator

The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.

preprint2009arXiv

Experimental demonstration of the topological surface states protected by the time-reversal symmetry

We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the topological states off Ag impurities and step edges on the Bi$_2$Te$_3$(111) surface. By studying the voltage-dependent standing wave patterns, we determine the energy dispersion $E(k)$, which confirms the Dirac cone structure of the topological states. We further show that, very different from the conventional surface states, the backscattering of the topological states by nonmagnetic impurities is completely suppressed. The absence of backscattering is a spectacular manifestation of the time-reversal symmetry, which offers a direct proof of the topological nature of the surface states.

preprint2008arXiv

Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate

Superconductor films on semiconductor substrates draw much attention recently since the derived superconductor-based electronics have been shown promising for future data process and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual giant magnetoresistance effect when the Pb film is superconducting. In addition to the great fundamental interest of this effect, the simple structure and compatibility and scalability with current Si-based semiconductor technology offer a great opportunity for integrating superconducting circuits and detectors in a single chip.