Researcher profile

Jianhao Zhang

Jianhao Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2023arXiv

Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides

On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 1/(W m), for a mechanical frequency near 15 GHz.

preprint2021arXiv

On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator

We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

preprint2020arXiv

High-index-contrast single-mode optical waveguides fabricated on lithium niobate by photolithography assisted chemo-mechanical etching (PLACE)

We report fabrication of low loss single mode waveguides on lithium niobate on insulator (LNOI) cladded by a layer of SiO2. Our technique, termed photolithography assisted chemo-mechanical etching (PLACE), relies on patterning of a chromium film into the mask shape by femtosecond laser micromachining and subsequent chemo-mechanical etching of the lithium niobate thin film. The high-index-contrast single mode waveguide is measured to have a propagation loss of 0.13 dB/cm. Furthermore, waveguide tapers are fabricated for boosting the coupling efficiency.

preprint2019arXiv

Efficient Electro-optical Tuning of Optical Frequency Microcomb on a Monolithically Integrated High-Q Lithium Niobate Microdisk

We demonstrate efficient tuning of a monolithically integrated lithium niobate microdisk (LN) optical frequency microcomb. Utilizing the high optical quality (Q) factor (i.e., Q~7.1*10^6) of the microdisk, the microcomb spans over a spectral bandwidth of ~200 nm at a pump power as low as 20.4 mW. Combining the large eletro-optic coefficient of LN and optimum design of the geometry of microelectrodes, we demonstrate electro-optical tuning of the comb with a spectral range of 400 pm and a tuning efficiency of ~38 pm/100V.