BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Jiangxiazi Lin

Jiangxiazi Lin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gascond-mat.str-el

Catalog footprint

What is connected

11works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

11 published item(s)

preprint2021arXiv

Bridging the gap between atomically thin semiconductors and metal leads

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Intrinsic valley Hall transport in atomically thin MoS2

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Charge Density Wave Phase Transition on the Surface of Electrostatically Doped Multilayer Graphene

We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also known as van Hove singularities where the density of states diverge) in the Brillouin zone of graphene band structure. The occurrence of such CDW phase transitions are supported by both the electrical transport measurement and optical measurements in electrostatically doped multilayer graphene. The CDW transition is accompanied with the sudden change of graphene channel resistance at T$_m$= 100K, as well as the splitting of Raman G peak (1580 cm$^{-1}$). The splitting of Raman G peak indicats the lifting of in-plane optical phonon branch degeneracy and the non-degenerate phonon branches are correlated to the lattice reconstructions of graphene -- the CDW phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Probing the Electronic States in Black Phosphorus Vertical Heterostructures

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in earlier reports. The unprecedentedly clean h-BN/BP/h-BN heterostructure exhibits Shubnikov-de Haas oscillations and quantum Hall effect with Landau level (LL) filling factors down to v=2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass m=0.26 m_0 is measured, and Lande g-factor g=2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up and down spin orientation is found.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $cm^2V^{-1}s^{-1}$ and 8400 $cm^2V^{-1}s^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without capping. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topological insulator near the interface. Strong band bending in the topological insulator requires careful material engineering or electric biasing if one desires to make use of the spin locking in surface states in the bulk gap for potential spintronic applications

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to monolayer graphene growth on SiO2/Si. The produced monolayer graphene exhibits high carrier mobility of up to 3000 cm2 V-1s-1 at room temperature and standard half-integer quantum oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explained the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides

In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. In this Letter, we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations for the Q valley electrons in FL transition metal disulfide (TMDs), as well as the first quantum Hall effect (QHE) in TMDCs. Our devices exhibit ultrahigh field-effect mobilities (~16,000 cm2V-1s-1 for FL WS2 and ~10,500 cm2V-1s-1 for FL MoS2) at cryogenic temperatures. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMD devices and a spin Zeeman effect in all even-layer TMD devices.

0 citations0 reviewsNo code linkedOpen access