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Jian-Shi Zhou

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2020arXiv

Electronic structure and magnetic exchange interactions of Cr-based van der Waals ferromagnets. A comparative study between CrBr3 and Cr2Ge2Te6

Low dimensional magnetism has been powerfully boosted as a promising candidate for numerous applications. The stability of the long-range magnetic order is directly dependent on the electronic structure and the relative strength of the competing magnetic exchange constants. Here, we report a comparative pressure-dependent theoretical and experimental study of the electronic structure and exchange interactions of two-dimensional ferromagnets CrBr3 and Cr2Ge2Te6 . While CrBr3 is found to be a Mott-Hubbard-like insulator, Cr2Ge2Te6 shows a charge-transfer character due to the broader character of the Te 5p bands at the Fermi level. This different electronic behaviour is responsible of the robust insulating state of CrBr3 , in which the magnetic exchange constants evolve monotonically with pressure, and the proximity to a metal-insulator transition predicted for Cr2Ge2Te6 , which causes a non-monotonic evolution of its magnetic ordering temperature. We provide a microscopic understanding for the pressure evolution of the magnetic properties of the two systems.

preprint2015arXiv

Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4

The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great importance for performance of semiconductor devices like diodes, transistors and lasers. The ability to tune its value would allow enhanced functionality and flexibility of future electronic and optical devices. Recently, an electrically tunable band gap was realized in a 2D material - electronically gated bilayer graphene [1-3]. Here we demonstrate the realization of an electrically tunable band gap in a 3D antiferromagnetic Mott insulator Sr2IrO4. Using nano-scale contacts between a sharpened Cu tip and a single crystal of Sr2IrO4, we apply a variable external electric field up to a few MV/m and demonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as 16%. We further demonstrate the feasibility of reversible resistive switching and electrically tunable anisotropic magnetoresistance,which provide evidence of correlations between electronic transport, magnetic order, and orbital states in this 5d oxide. Our findings suggest a promising path towards band gap engineering in 5d transition-metal oxides that could potentially lead to appealing technical solutions for next-generation electronic devices.

preprint2014arXiv

Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing magnetic field with angular variations in resistance from 1-14%. We tentatively attribute the four-fold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of AFM-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also better harness the power of spintronics in a more technically favorable fashion.