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Delin Zhang

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Published work

8 published item(s)

preprint2022arXiv

Designing shape-memory-like microstructures in intercalation materials

During the reversible insertion of ions, lattices in intercalation materials undergo structural transformations. These lattice transformations generate misfit strains and volume changes that, in turn, contribute to the structural decay of intercalation materials and limit their reversible cycling. In this paper, we draw on insights from shape-memory alloys, another class of phase transformation materials, that also undergo large lattice transformations but do so with negligible macroscopic volume changes and internal stresses. We develop a theoretical framework to predict structural transformations in intercalation compounds and establish crystallographic design rules necessary for forming shape-memory-like microstructures in intercalation materials. We use our framework to systematically screen open-source structural databases comprising n > 5000 pairs of intercalation compounds. We identify candidate compounds, such as Li$_x$Mn$_2$O$_4$ (Spinel), Li$_x$Ti$_2$(PO$_4$)$_3$ (NASICON), that approximately satisfy the crystallographic design rules and can be precisely doped to form shape-memory-like microstructures. Throughout, we compare our analytical results with experimental measurements of intercalation compounds. We find a direct correlation between structural transformations, microstructures, and increased capacity retention in these materials. These results, more generally, show that crystallographic designing of intercalation materials could be a novel route to discovering compounds that do not decay with continuous usage.

preprint2022arXiv

Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal

Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a magnetron sputtering method at room temperature. The charge-to-spin ratio of PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic resonance (ST-FMR) technique. This ratio can further increase to 0.14 by inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease (Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with dopants.

preprint2022arXiv

Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN

In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.

preprint2020arXiv

Ultra-high frequency magnetic resonance through strain-spin coupling in perpendicular magnetic multi-layers

The interaction between strain and spin has received intensive attention in the scientific community due to its abundant physical phenomena and huge technological impact. Until now, there is no experimental report on ultra-high frequency magnetic resonance through the strain-spin coupling for any technologically relevant perpendicular magnetic material. Here we report the experimental detection of the acoustic strain waves that have a response time on the order of 10 picoseconds in perpendicular magnetic [Co/Pd]n multilayers via a femtosecond laser pulse excitation. Through direct measurements of acoustic strain waves, we observe an ultra-high frequency magnetic resonance up to 60 GHz in [Co/Pd]n multilayers. We further report a theoretical model of the strain-spin interaction. Our model reveals that the energy could be transferred efficiently from the strain to the spins and well explains the existence of a steady resonance state through exciting the spin system. The physical origins of the resonance between strain waves and magnetic precession and the requested conditions for obtaining magnetic resonance within thin magnetic films have also been discussed after thorough analysis. These combined results point out a potential pathway to enable an extremely high frequency (EHF) magnetic resonance through the strain-spin coupling.

preprint2016arXiv

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

preprint2012arXiv

First-principles study of the structural stability of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds

We investigate the structural stability and magnetic properties of cubic, tetragonal and hexagonal phases of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds using first-principles density-functional theory. We propose that the cubic phase plays an important role as an intermediate state in the phase transition from the hexagonal to the tetragonal phases. Consequently, Mn3Ga and Mn3Ge behave differently from Mn3Sn, because the relative energies of the cubic and hexagonal phases are different. This result agrees with experimental observations from these three compounds. The weak ferromagnetism of the hexagonal phase and the perpendicular magnetocrystalline anisotropy of the tetragonal phase obtained in our calculations are also consistent with experiment.

preprint2012arXiv

Topological surface states of Bi2Se3 with the coexistence of Se vacancies

Although topological surface states are known to be robust against non-magnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to the surface defects. Take Bi2Se3 as an example, we demonstrated that Se vacancies modifies the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to second quintuple layer and get separated from the vacancies. We simulated STM images to distinguish the surfaces with Se- and Bi-terminations.

preprint2011arXiv

Perpendicular magnetic anisotropy of full-Heusler films in Pt/Co2FeAl/MgO trilayers

We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable that the anisotropy energy density Ku is 1.3{\times}106 erg/cm3 for the structure with 2 nm Co2FeAl after annealing at 350 oC. The thicknesses of Co2FeAl and MgO layers greatly affect the PMA. Our results provide an effective way to realize relative thick perpendicularly magnetized Heusler alloy films.