Researcher profile

Jesse Balgley

Jesse Balgley contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2025arXiv

Observing unconventional superconductivity via kinetic inductance in Weyl semimetal MoTe$_2$

Identifying the pairing symmetry of unconventional superconductors plays an essential role in the ongoing quest to understand correlated electronic matter. A long-standing approach is to study the temperature dependence of the London penetration depth $λ$ for evidence of nodal points where the superconducting gap vanishes. However, experimental reports can be ambiguous due to the requisite low-temperature resolution, and the similarity in signatures of nodal quasiparticles and impurity states. Here we study the pairing symmetry of Weyl semimetal $T_d$-MoTe$_2$, where previous measurements of $λ$ have yielded conflicting results. We utilize a novel technique based on a microwave resontor to measure the kinetic inductance of MoTe$_2$, which is directly related to $λ$. The high precision of this technique allows us to observe power-law temperature dependence of $λ$, and to measure the anomalous nonlinear Meissner effect -- the current dependence of $λ$ arising from nodal quasiparticles. Together, these measurements provide smoking gun signatures of nodal superconductivity.

preprint2022arXiv

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $α$-RuCl$_3$ flake.