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Erik A. Henriksen

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preprint2024arXiv

Isotope engineering for spin defects in van der Waals materials

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ( $\mathrm{V}_{\mathrm{B}}^-$ ) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$ . For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ( $2$ ) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

preprint2022arXiv

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

We demonstrate ultra-sharp ( ${\lesssim}\,10\text{ nm}$ ) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$ -RuCl $_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$ -RuCl $_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$ -RuCl $_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $α$ -RuCl $_3$ flake.

preprint2020arXiv

Extraordinary magnetoresistance in encapsulated monolayer graphene devices

We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B) - R_0) / R_0\sim 10^5$ , are achieved in part because $R_0$ approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, $dR/dB$ , which in two-terminal measurements is the highest yet reported for EMR devices, and in particular exceeds prior results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of $pn$ -junctions at the graphene-metal shunt interface.

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Erik A. Henriksen

Research overview

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3 publications

Isotope engineering for spin defects in van der Waals materials

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

Extraordinary magnetoresistance in encapsulated monolayer graphene devices

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Erik A. Henriksen

Research overview

Is this your work?

3 publications

Isotope engineering for spin defects in van der Waals materials

Ultra-sharp lateral p-np\text{-}np-n junctions in modulation-doped graphene

Extraordinary magnetoresistance in encapsulated monolayer graphene devices

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Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene