Growth and electronic structure of epitaxial single-layer WS on Au(111)
Large-area single-layer WS is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure HS atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at is found to be significantly higher than at . The observed dispersion around is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the points, with a maximum splitting of 419(11)~meV. The valence band dispersion around is found to be highly anisotropic with spin-branch dependent effective hole masses of and for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS a promising alternative to the widely studied MoS for applications in electronics, spintronics and valleytronics.