BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Jeongwoo Kim

Jeongwoo Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.otherCryptography and SecurityProgramming Languages

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
6works
0followers
6topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2022arXiv

Dynamical mean-field theory study of a ferromagnetic CrI3 monolayer

We have employed one of the well-known many-body techniques, density functional theory plus dynamical mean-field theory (DFT + DMFT), to investigate the electronic structure of ferromagnetic monolayer CrI3 as a function of temperature and hole-doping concentration. The computed magnetic susceptibility follows the Curie's law, indicating that the ferromagnetism of monolayer CrI3 originates from localized magnetic moments of Cr atoms rather than Stoner-type itinerant ones. The DFT + DMFT calculations show a different coherent temperature for each spin component, demonstrating apparent strong spin-dependent electronic correlation effects in monolayer CrI3. Furthermore, we have explored the doping-dependent electronic structure of monolayer CrI3 and found that its electronic and magnetic properties are easily tunable by the hole-doping.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

SSLEM: A Simplifier for MBA Expressions based on Semi-linear MBA Expressions and Program Synthesis

MBA (mixed boolean and arithmetic) expressions are hard to simplify, so used for malware obfuscation to hinder analysts' diagnosis. Some MBA simplification methods with high performance have been developed, but they narrowed the target to "linear" MBA expressions, which allows efficient solutions based on logic/term-rewriting. However such restrictions are not appropriate for general forms of MBA expressions usually appearing in malware. To overcome this limitation, we introduce a "semi-linear" MBA expression, a new class of MBA expression extended from a linear MBA expression, and propose a new MBA simplifier called "SSLEM", based on a simplification idea of semi-linear MBA expressions and program synthesis

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

New class of 3D topological insulator in double perovskite

We predict a new class of three-dimensional topological insulators (TIs) in which the spin-orbit coupling (SOC) can more effectively generate a large band gap at $Γ$ point. The band gap of conventional TI such as Bi$_2$Se$_3$ is mainly limited by two factors, the strength of SOC and, from electronic structure perspective, the band gap when SOC is absent. While the former is an atomic property, we find that the latter can be minimized in a generic rock-salt lattice model in which a stable crossing of bands {\it at} the Fermi level along with band character inversion occurs for a range of parameters in the absence of SOC. Thus, large-gap TI's or TI's comprised of lighter elements can be expected. In fact, we find by performing first-principle calculations that the model applies to a class of double perovskites A$_2$BiXO$_6$ (A = Ca, Sr, Ba; X = Br, I) and the band gap is predicted up to 0.55 eV. Besides, more detailed calculations considering realistic surface structure indicate that the Dirac cones are robust against the presence of dangling bond at the boundary with a specific termination.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS$_2$

We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS$_2$-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS$_2$-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the Rashba SOC relaxation rate to be $\sim 0.2 \rm{ps}^{-1}$ and show that it can be tuned by transverse electric fields. In addition to the Rashba SOC, we also predict the existence of a `valley-Zeeman' SOC from first-principles calculations. The interplay between these two SOC's can open a non-topological but interesting gap in graphene; in particular, zigzag boundaries host four sub-gap edge states protected by time-reversal and crystalline symmetries. The graphene/WS$_2$ system provides a possible platform for these novel edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological phase transition in Dirac fermionic heterostructures

Materials with non-trivial topology in their electronic structures enforce the existence of helical Dirac fermionic surface states. We discovered emergent topological phases in the stacked structures of topological insulator and band insulator layers where the surface Dirac fermions interact to each other with particular helicity ordering. Using first-principles calculations and a model Lagrangian, we explicitly demonstrated that such helicity ordering occurs in real materials of ternary chalcogen compounds and determines their topological insulating phase. Our results reveal the rich collective nature of interacting surface Dirac fermions, and pave the way for utilizing topological phases for technological devices such as non-volatile memories.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Topological insulating behaviour in conducting property of crystalline Ge-Sb-Te

We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or develop conducting surface-like interface states depending on the layer stacking sequence. It is shown that the conducting interface states originate from topological insulating Sb2Te3 layers in GSTs and can be crucial to the electronic property of the compounds. These interface states are found to be quite resilient to atomic disorders but sensitive to the uniaxial strains. We presented the mechanisms that destroy the topological insulating order in GSTs and investigated the role of Ge migration that is believed to be responsible for the amorphorization of GSTs.

0 citations0 reviewsNo code linkedOpen access