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Jens Kunstmann

Jens Kunstmann appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.optics

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Published work

10 published item(s)

preprint2020arXiv

Exciton g-factors of van der Waals heterostructures from first principles calculations

External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers and obtain good agreement with recent experimental data. The precision of our method allows to assign measured g-factors of optical peaks to specific transitions in the band structure and also to specific regions of the samples. This revealed the nature of various, previously measured interlayer exciton peaks. We further show that, due to specific optical selection rules, g-factors in van der Waals heterostructures are strongly spin- and stacking-dependent. The calculation of orbital angular momenta requires the summation over hundreds of bands, indicating that for the considered two-dimensional materials the basis set size is a critical numerical issue. The presented approach can potentially be applied to a wide variety of semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anomalous Interlayer Exciton Diffusion in Twist-Angle-Dependent Moiré Potentials of WS$_2$-WSe$_2$ Heterobilayers

The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the localization and delocalization of interlayer excitons in the moiré potentials is necessary. Here, we investigated interlayer exciton dynamics and transport modulated by the moiré potentials in WS$_2$-WSe$_2$ heterobilayers in time, space, and momentum domains using transient absorption microscopy combined with first-principles calculations. Experimental results verified the theoretical prediction of energetically favorable K-Q interlayer excitons and unraveled exciton-population dynamics that was controlled by the twist-angle-dependent energy difference between the K-Q and K-K excitons. Spatially- and temporally-resolved exciton-population imaging directly visualizes exciton localization by twist-angle-dependent moiré potentials of ~100 meV. Exciton transport deviates significantly from normal diffusion due to the interplay between the moiré potentials and strong many-body interactions, leading to exciton-density- and twist-angle-dependent diffusion length. These results have important implications for designing vdW heterostructures for exciton and spin transport as well as for quantum communication applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thermodynamic stability of Borophene, $\mathrm{B_2O_3}$ and other $\mathrm{B_{1-x}O_x}$ sheets

The recent discovery of borophene, a two-dimensional allotrope of boron, raises many questions about its structure and its chemical and physical properties. Boron has a high chemical affinity to oxygen but little is known about the oxidation behavior of borophene. Here we use first principles calculations to study the phase diagram of free-standing, two-dimensional $\mathrm{B_{1-x}O_x}$ for compositions ranging from $x=0$ to $x=0.6$, which correspond to borophene and $\mathrm{B_2O_3}$ sheets, respectively. Our results indicate that no stable compounds except borophene and $\mathrm{B_2O_3}$ sheets exist. Intermediate compositions are heterogeneous mixtures of borophene and $\mathrm{B_2O_3}$. Other hypothetical crystals such as $\mathrm{B_2O}$ are unstable and some of them were found to undergo spontaneous disproportionation into borophene and $\mathrm{B_2O_3}$. It is also shown that oxidizing borophene inside the flakes is thermodynamically unfavorable over forming $\mathrm{B_2O_3}$ at the edges. All findings can be rationalized by oxygen's preference of two-fold coordination which is incompatible with higher in-plane coordination numbers preferred by boron. These results agree well with recent experiments and pave the way to understand the process of oxidation of borophene and other two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Structure, non-stoichiometry, and geometrical frustration of alpha-tetragonal boron

Recent discoveries of supposedly pure alpha-tetragonal boron require to revisit its structure. The system is also interesting with respect to a new type of geometrical frustration in elemental crystals, which was found in beta-rhombohedral boron. Based on density functional theory calculations, the present study has resolved the structural and thermodynamic characteristics of pure alpha-tetragonal boron. Different from beta-rhombohedral boron, the conditions for stable covalent bonding (a band gap and completely filled valence bands) are almost fulfilled at a composition B_52 with two 4c interstitial sites occupied. This indicates that the ground state of pure alpha-tetragonal boron is stoichiometric. However, the covalent condition is not perfectly fulfilled because non-bonding in-gap states exist that cannot be eliminated. The half occupation of the 4c sites yields a macroscopic amount of residual entropy, which is as large as that of beta-rhombohedral boron. Therefore, alpha-tetragonal boron can be classified as an elemental crystal with geometrical frustration. Deviations from stoichiometry can occur only at finite temperatures. Thermodynamic considerations show that deviations delta from the stoichiometric composition B_(52+delta) are small and positive. For reported high-pressure syntheses conditions delta is predicted to be about 0.1 to 0.2. An important difference between pure and C- or N-containing alpha-tetragonal boron is found in the occupation of interstitial sites: the pure form prefers to occupy the 4c sites, whereas in C- or N-containing forms a mixture of 2a, 8h, and 8i sites are occupied. The present article provides relations of site occupation, delta values, and lattice parameters, which enable us to identify pure alpha-tetragonal and distinguish the pure form from other ones.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Diameter-Selective Dispersion of Carbon Nanotubes via Polymers: A Competition between Adsorption and Bundling

The mechanism of the selective dispersion of single-walled carbon nanotubes (CNTs) by polyfluorene polymers is studied in this paper. Using extensive molecular dynamics simulations, it is demonstrated that diameter selectivity is the result of a competition between bundling of CNTs and adsorption of polymers on CNT surfaces. The preference for certain diameters corresponds to local minima of the binding energy difference between these two processes. Such minima in the diameter dependence occur due to abrupt changes in the CNT's coverage with polymers and their calculated positions are in quantitative agreement with preferred diameters, reported experimentally. The presented approach defines a theoretical framework for the further understanding and improvement of dispersion/extraction processes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Unveiling the atomic structure of single-wall boron nanotubes

Despite recent successes in the synthesis of boron nanotubes (BNTs), the atomic arrangement of their walls has not yet been determined and many questions about their basic properties do remain. Here, we unveil the dynamical stability of BNTs by means of first-principles molecular dynamics simulations. We find that free-standing, single-wall BNTs with diameters larger than 0.6 nm are thermally stable at the experimentally reported synthesis temperature of 870$^\circ$C and higher. The walls of thermally stable BNTs are found to have a variety of different mixed triangular-hexagonal morphologies. Our results substantiate the importance of mixed triangular-hexagonal morphologies as a structural paradigm for atomically thin boron.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Localization of metallicity and magnetic properties of graphene and of graphene nanoribbons doped with boron clusters

As a possible way of modifying the intrinsic properties of graphene we study the doping of graphene by embedded boron clusters with density functional theory. Cluster doping is technologically relevant as the cluster implantation technique can be readily applied to graphene. We find that B7 clusters embedded into graphene and graphene nanoribbons are structurally stable and locally metallize the system. This is done both by the reduction of the Fermi energy and by the introduction of boron states near the Fermi level. A linear chain of boron clusters forms a metallic "wire" inside the graphene matrix. In a zigzag edge graphene nanoribbon the cluster-related states tend to hybridize with the edge and bulk states. The magnetism in boron doped graphene systems is generally very weak. The presence of boron clusters weakens the edge magnetism in zigzag edge graphene nanoribbon, rather than making the system appropriate for spintronics. Thus the doping of graphene with the cluster implantation technique might be a viable technique to locally metallize graphene without destroying its attractive bulk properties.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Graphene: Piecing it together

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect Transistors for Sensor Applications

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky-barrier by solving the Poisson equation, and (2) the Landauer approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Stability of edge states and edge magnetism in graphene nanoribbons

We critically discuss the stability of edge states and edge magnetism in zigzag edge graphene nanoribbons (ZGNRs). We point out that magnetic edge states might not exist in real systems, and show that there are at least three very natural mechanisms - edge reconstruction, edge passivation, and edge closure - which dramatically reduce the effect of edge states in ZGNRs or even totally eliminate them. Even if systems with magnetic edge states could be made, the intrinsic magnetism would not be stable at room temperature. Charge doping and the presence of edge defects further destabilize the intrinsic magnetism of such systems.

0 citations0 reviewsNo code linkedOpen access