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Researcher profile

Jens Birch

Jens Birch contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.dis-nnphysics.app-phphysics.atom-phphysics.chem-phphysics.comp-phphysics.ins-det

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Published work

5 published item(s)

preprint2023arXiv

In-situ real-time evolution of intrinsic stresses and microstructure during growth of cathodic arc deposited (Al,Ti)N coatings

The residual stress plays a vital role in determination of the device performance that uses thin films coating and thus the accurate determination of stress and its optimization with process parameters is an ongoing research work for many decades. In line with this, the microscopic origin of the stress at the atomic scale and its development during the thin film deposition is a matter of major scientific interests. The development of stress is a complex phenomenon and has a complex dependence to process parameters, film microstructure and its morphology. In this work, by utilizing a custom-designed cathodic arc deposition system and synchrotron radiation based 2D x-ray diffraction (XRD) technique, we determine the real-time evolution of stress, crystallite sizes and their preferential orientations of Aluminum-Titanium-Nitride (AlxTi1-xN) films with varied Al-content (x=0.0, 0.25, 0.50, and 0.67) on Si-100 substrate. The energies of incoming ions and hence stress in the films is tuned by applying different direct current substrate bias (Vs = floating potential, -20, -40, -60, -80, and -100 V). The instantaneous stress is evaluated by the well-known d vs. sin2ψ technique, while crystallite sizes are determined by analyzing line profiles of x-ray diffractograms. The evolution of stress and crystallite sizes are modelled with multiple numerical models from which kinetic parameters associated with the thin film depositions are extracted. The ex-situ microstructure characterizations of AlxTi1-xN coatings are carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The formation of ex-situ microstructure of the films is discussed considering the results obtained from in-situ XRD data. Finally, we demonstrate that the method utilized here is a powerful approach towards estimation of the fracture toughness of thin film coatings.

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preprint2022arXiv

Effect of substrate roughness and material selection on the microstructure of sputtering deposited boron carbide thin films

Amorphous boron carbide (B4C) thin films are by far the most popular form for the neutron converting layers in the 10B-based neutron detectors, which are a rising trend in detector technologies in response to the increasing scarcity and price of 3He, the standard material for neutron detection. The microstructure of the B4C films is closely related to the important properties, e.g. density and adhesion, for the converting layers, which eventually affect the detection efficiency and the long-term stability of the detectors. To study the influence from substrates of different roughness and materials, the B4C films were deposited on polished Si substrates with Al, Ti, and Cu buffer layers and unpolished Si, Al, Ti, and Cu substrates by direct current magnetron sputtering at a substrate temperature of 623 K. The tapered columnar grains and nodular defects, generally observed in SEM images, indicated a strong shadowing effect where voids were introduced around the grains. The change in the grain size did not show a direct dependence to the substrate roughness, acquired from the surface profile, nor to the mass density of the films, obtained from reflectivity patterns. However, films with non-uniform size of columnar grains were deposited on substrates with high skewness, leading to a drop of mass density from ~95 % down to ~70 % of tabulated bulk density. On the other hand, similar microstructures and mass density were obtained from the films deposited on Al, Ti, and Cu of different roughness and good adhesion were observed from cross-cut adhesion tests, showing the reliability of sputtering deposited B4C films on common structural materials in neutron detectors.

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preprint2011arXiv

Electronic structure investigation of the cubic inverse perovskite Sc3AlN

The electronic structure and chemical bonding of the recently discovered inverse perovskite Sc3AlN, in comparison to ScN and Sc metal have been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured Sc L, N K, Al L1, and Al L2,3 emission spectra are compared with calculated spectra using first principle density-functional theory including dipole transition matrix elements. The main Sc 3d - N 2p and Sc 3d - Al 3p chemical bond regions are identified at -4 eV and -1.4 eV below the Fermi level, respectively. A strongly modified spectral shape of 3s states in the Al L2,3 emission from Sc3AlN in comparison to pure Al metal is found, which reflects the Sc 3d - Al 3p hybridization observed in the Al L1 emission. The differences between the electronic structure of Sc3AlN, ScN, and Sc metal are discussed in relation to the change of the conductivity and elastic properties.

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preprint2011arXiv

The electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by calculated spectra using first-principles density-functional theory (DFT) including dipole transition matrix elements and additional on-site Coulomb interaction (WC-GGA+U). The Ga 4p - N 2p and Ga 4s - N 2p hybridization and chemical bond regions are identified at the top of the valence band between -1.0 and -2.0 and further down between -5.5 and -6.5 eV, respectively. In addition, N 2s - N 2p - Ga 4s and N 2s - N 2p - Ga 3d hybridization regions occur at the bottom of the valence band between -13 and -15 eV, and between -17.0 and -18.0 eV, respectively. A band-like satellite feature is also found around -10 eV in the Ga M1 and Ga M2,3 emission from GaN, but is absent in pure Ga and the calculated ground state spectra. The difference between the identified spectroscopic features of GaN and Ga are discussed in relation to the various hybridization regions calculated within band-structure methods.

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preprint2010arXiv

Origin of the anomalous piezoelectric response in wurtzite Sc$_x$Al$_{1-x}$N alloys

The origin of the anomalous, 400% increase of the piezoelectric coefficient in Sc$_x$Al$_{1-x}$N alloys is revealed. Quantum mechanical calculations show that the effect is intrinsic. It comes from a strong change in the response of the internal atomic coordinates to strain and pronounced softening of C$_{33}$ elastic constant. The underlying mechanism is the flattening of the energy landscape due to a competition between the parent wurtzite and the so far experimentally unknown hexagonal phases of the alloy. Our observation provides a route for the design of materials with high piezoelectric response.

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