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Jeffrey A. Eastman

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2022arXiv

Burton-Cabrera-Frank theory for surfaces with alternating step types

Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of crystal surfaces, including the basal planes of hexagonal close-packed and related systems, the steps in a sequence on a vicinal surface can exhibit properties that alternate from step to step. Here we develop BCF theory for such surfaces, relating observables such as alternating terrace widths as a function of growth conditions to the kinetic coefficients for adatom attachment at steps. We include the effects of step transparency and step-step repulsion. A general solution is obtained for the dynamics of the terrace widths, assuming quasi-steady-state adatom distributions on the terraces. An explicit simplified analytical solution is obtained under widely applicable approximations. From this we obtain expressions for the full-steady-state terrace fraction as a function of growth rate. Fits of the theoretical predictions to recent experimental determinations of the steady-state and dynamics of terrace fractions on GaN (0001) surfaces during organo-metallic vapor phase epitaxy give values of the kinetic coefficients for this system. In Appendices, we also connect a model for diffusion between kinks on steps to the model for diffusion between steps on terraces, which quantitatively relates step transparency to the kinetics of atom attachment at kinks, and consider limiting cases of diffusion-limited, attachment-limited, and mixed kinetics.

preprint2021arXiv

Crystal Truncation Rods from Miscut Surfaces with Alternating Terminations

Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an αβαβ stacking sequence, there have been long-standing questions regarding how the differences in adatom attachment kinetics at the steps separating the terraces affect the fractional coverage of α vs. β termination during crystal growth. To demonstrate how surface X-ray scattering can help address these questions, we develop a general theory for the intensity distributions along crystal truncation rods (CTRs) for miscut surfaces with a combination of two terminations. We consider half-unit-cell-height steps, and variation of the coverages of the terraces above each step. Example calculations are presented for the GaN (0001) surface with various reconstructions. These show which CTR positions are most sensitive to the fractional coverage of the two terminations. We compare the CTR profiles for exactly oriented surfaces to those for vicinal surfaces having a small miscut angle, and investigate the circumstances under which the CTR profile for an exactly oriented surface is equal to the sum of the intensities of the corresponding family of CTRs for a miscut surface.

preprint2020arXiv

Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy

Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be explained by the $αβαβ$ stacking sequence of the wurtzite crystal structure, which results in steps with alternating $A$ and $B$ edge structures for the lowest energy step azimuths, i.e. steps normal to $[0 1 \bar{1} 0]$ type directions. Predicted differences in the adatom attachment kinetics at $A$ and $B$ steps would lead to alternating $α$ and $β$ terrace widths. However, because of the difficulty of experimentally identifying which step is $A$ or $B$, it has not been possible to determine the absolute difference in their behavior, e.g. which step has higher adatom attachment rate constants. Here we show that surface X-ray scattering can measure the fraction of $α$ and $β$ terraces, and thus unambiguously differentiate the growth dynamics of $A$ and $B$ steps. We first present calculations of the intensity profiles of GaN crystal truncation rods (CTRs) that demonstrate a marked dependence on the $α$ terrace fraction $f_α$. We then present surface X-ray scattering measurements performed \textit{in situ} during homoepitaxial growth on (0001) GaN by vapor phase epitaxy. By analyzing the shapes of the $(1 0 \bar{1} L)$ and $(0 1 \bar{1} L)$ CTRs, we determine that the steady-state $f_α$ increases at higher growth rate, indicating that attachment rate constants are higher at $A$ steps than at $B$ steps. We also observe the dynamics of $f_α$ after growth conditions are changed. The results are analyzed using a Burton-Cabrera-Frank model for a surface with alternating step types, to extract values for the kinetic parameters of $A$ and $B$ steps. These are compared with predictions for GaN (0001).

preprint2018arXiv

Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays

Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) using coherent x-rays opens new opportunities for in situ observation of atomic-scale fluctuation dynamics during crystal growth. Here, we present the first XPCS measurements of 2D island dynamics during homoepitaxial growth in the layer-by-layer mode. Analysis of the results using two-time correlations reveals a new phenomenon - a memory effect in island nucleation sites on successive crystal layers. Simulations indicate that this persistence in the island arrangements arises from communication between islands on different layers via adatoms. With the worldwide advent of new coherent x-ray sources, the XPCS methods pioneered here will be widely applicable to atomic-scale processes on surfaces.

preprint2012arXiv

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in shaping a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search of a means for controlling the atomic-sharpness of the interfaces. Our experimental results show that growth of LaAlO3 at a high oxygen pressure dramatically enhances interface abruptness. As a consequence, the critical thickness for strain relaxation was increased, facilitating coherent epitaxy of perovskite oxides. This provides a clear understanding of the role of oxygen pressure during the interface formation, and enables the synthesis of oxide heterostructures with chemically-sharper interfaces.