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Researcher profile

Jeehoon Kim

Jeehoon Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2022arXiv

Nanoscale Thermal Imaging of VO$_2$ via Poole-Frenkel Conduction

We present a method for nanoscale thermal imaging of insulating thin films using atomic force microscopy (AFM), and we demonstrate its utility on VO$_2$. We sweep the applied voltage $V$ to a conducting AFM tip in contact mode and measure the local current $I$ through the film. By fitting the $IV$ curves to a Poole-Frenkel conduction model at low $V$, we calculate the local temperature with spatial resolution better than 50 nm using only fundamental constants and known film properties. Our thermometry technique enables local temperature measurement of \textit{any} insulating film dominated by the Poole-Frenkel conduction mechanism, and can be extended to insulators that display other conduction mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Interlayer Exchange Interaction Driven Topological Phase Transition in Antiferromagnetic Electride Gd$_2$O

Based on first-principles calculations, we discover a two-dimensional layered antiferromagnetic (AFM) electride Gd$_2$O, where anionic excess electrons exist in the interstitial spaces between positively charged cationic layers. It is revealed that each cationic layer composed of three-atom-thick Gd$-$O$-$Gd stacks has in-plane ferromagnetic and out-of-plane AFM superexchange interactions between the localized Gd 4$f$ spins through O 2$p$ orbitals. Furthermore, the interlayer superexchange mediated by the hybridized Gd-5$d$ and interstitial-$s$-like states involves intimate couplings between the spin, lattice, and charge degrees of freedom, thereby inducing simultaneous magnetic, structural, and electronic phase transitions. The resulting ground state with the simple hexagonal lattice hosts massless Dirac fermions protected by nonsymmorphic magnetic symmetry, as well as massive Dirac fermions. We thus demonstrate that the anionic excess electrons in Gd$_2$O play a crucial role in the emergence of magnetic Dirac semimetal states, therefore offering an intriguing interplay between 2D magnetic electrides and topological physics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Josephson coupling in high-T$_c$ superconducting junctions using ultra-thin BaTiO$_3$ barriers

We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBa$_2$Cu$_3$O$_{7-d}$ electrodes and a BaTiO$_3$ barrier with thicknesses between 1 nm and 3 nm. The junctions with an area of 20 mm x 20 mm were fabricated combining optical lithography and ion etching using GdBa$_2$Cu$_3$O$_{7-d}$ (16 nm) / BaTiO$_3$ (1 - 3 nm) / GdBa$_2$Cu$_3$O$_{7-d}$ (16 nm) trilayers growth by sputtering on (100) SrTiO$_3$. Current-voltage measurements at low temperatures show a Josephson coupling for junctions with BaTiO$_3$ barriers of 1 nm and 2 nm. Reducing the barrier thickness bellow a critical thickness seems to suppress the ferroelectric nature of the BaTiO$_3$. The Josephson coupling temperature is strongly reduced for increasing barrier thicknesses, which may be related to the suppression of the superconducting critical temperature in the bottom GdBa$_2$Cu$_3$O$_{7-d}$ due to stress. The Josephson energies at 12 K are of $\approx$ 1.5 mV and $\approx$ 7.5 mV for BaTiO$_3$ barriers of 1 nm and 2 nm. Fraunhofer patterns are consistent with fluctuations in the critical current due to structural inhomogeneities in the barriers. Our results are promising for the development of Josephson junctions using high-T$_c$ electrodes with energy gaps much higher than those usually present in conventional low-temperature superconductors.

0 citations0 reviewsNo code linkedOpen access