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Jean-Louis Pichard

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Published work

13 published item(s)

preprint2016arXiv

Nanowire-based thermoelectric ratchet in the hopping regime

We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate, and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime, when localized electrons can propagate through the nanowires via thermally assisted hops. When the electronic temperature in the nanowires is different from the phononic one in the substrate, we show that a finite electrical current is generated even in the absence of driving forces between the electrodes. We discuss the device performance both as an energy harvester, when an excess heat from the substrate is converted into useful power, and as a refrigerator, when an external power is supplied to cool down the substrate.

preprint2015arXiv

Absorbing/Emitting Phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: Arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.

preprint2015arXiv

Scanning Gate Microscopy of Quantum Contacts Under Parallel Magnetic Field: Beating Patterns Between Spin-Split Transmission Peaks or Channel Openings

We study the conductance $g$ of an electron interferometer created in a two dimensional electron gas between a nanostructured contact and the depletion region induced by the charged tip of a scanning gate microscope. Using non-interacting models, we study the beating pattern of interference fringes exhibited by the images giving $g$ as a function of the tip position when a parallel magnetic field is applied. The analytical solution of a simplified model allows us to distinguish between two cases: (i) If the field is applied everywhere, the beating of Fabry-Pérot oscillations of opposite spins gives rise to interference rings which can be observed at low temperatures when the contact is open between spin-split transmission resonances. (ii) If the field acts only upon the contact, the interference rings cannot be observed at low temperatures, but only at temperatures of the order of the Zeeman energy. For a contact made of two sites in series, a model often used for describing an inversion-symmetric double-dot setup, a pseudo-spin degeneracy is broken by the inter-dot coupling and a similar beating effect can be observed without magnetic field at temperatures of the order of the interdot coupling. Eventually, numerical studies of a quantum point contact with quantized conductance plateaus confirm that a parallel magnetic field applied everywhere or only upon the contact gives rises to similar beating effects between spin-split channel openings.

preprint2015arXiv

Using Activated Transport in Parallel Nanowires for Energy Harvesting and Hot Spot Cooling

We study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we compute the thermopower $S$, the electrical conductance $G$, and the electronic thermal conductance $K^e$ of the device. We investigate how those quantities depend on the position -- which can be tuned with a back gate -- of the nanowire impurity band with respect to the equilibrium electrochemical potential. We show that large power factors can be reached near the band edges, when $S$ self-averages to large values while $G$ is small but scales with the number of wires. Calculating the amount of heat exchanged locally between the electrons inside the nanowires and the phonons of the environment, we show that phonons are mainly absorbed near one electrode and emitted near the other when a charge current is driven through the nanowires near their band edges. This phenomenon could be exploited for a field control of the heat exchange between the phonons and the electrons at submicron scales in electronic circuits. It could be also used for cooling hot spots.

preprint2014arXiv

Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime

Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first paper, we consider the low temperature coherent regime where the electron transmission through the nanowire remains elastic. In the limit where the nanowire length exceeds the electron localization length, we derive three analytical expressions for the typical value of the thermopower as a function of the gate potential, in the cases where the electron transport takes place (i) inside the impurity band of the nanowire, (ii) around its band edges and eventually (iii) outside its band. We obtain a very large enhancement of the typical thermopower at the band edges, while the sample to sample fluctuations around the typical value exhibit a sharp crossover from a Lorentzian distribution inside the impurity band towards a Gaussian distribution as the band edges are approached.

preprint2014arXiv

Gate-modulated thermopower of disordered nanowires: II. Variable-range hopping regime

We study the thermopower of a disordered nanowire in the field effect transistor configuration. After a first paper devoted to the elastic coherent regime (Bosisio R., Fleury G. and Pichard J.-L. 2014 \textit{New J. Phys.} \textbf{16} 035004), we consider here the inelastic activated regime taking place at higher temperatures. In the case where charge transport is thermally assisted by phonons (Mott Variable Range Hopping regime), we use the Miller-Abrahams random resistor network model as recently adapted by Jiang et al. for thermoelectric transport. This approach previously used to study the bulk of the nanowire impurity band is extended for studying its edges. In this limit, we show that the typical thermopower is largely enhanced, attaining values larger that $10\, k_B/e \sim 1\, \mathrm{mV\,K}^{-1}$ and exhibiting a non-trivial behaviour as a function of the temperature. A percolation theory by Zvyagin extended to disordered nanowires allows us to account for the main observed edge behaviours of the thermopower.

preprint2013arXiv

Delay-Time and Thermopower Distributions at the Spectrum Edges of a Chaotic Scatterer

We study chaotic scattering outside the wide band limit, as the Fermi energy $E_F$ approaches the band edges $E_B$ of a one-dimensional lattice embedding a scattering region of M sites. We show that the delay-time and thermopower distributions differ near the edges from the universal expressions valid in the bulk. To obtain the asymptotic universal forms of these edge distributions, one must keep constant the energy distance $E_F-E_B$ measured in units of the same energy scale proportional to $\propto M^{-1/3}$ which is used for rescaling the energy level spacings at the spectrum edges of large Gaussian matrices. In particular the delay-time and the thermopower have the same universal edge distributions for arbitrary M as those for an M=2 scatterer, which we obtain analytically.

preprint2013arXiv

Scanning Gate Microscopy of Kondo Dots: Fabry-Pérot Interferences and Thermally Induced Rings

We study the conductance of an electron interferometer formed in a two dimensional electron gas between a nanostructured quantum contact and the charged tip of a scanning gate microscope. Measuring the conductance as a function of the tip position, thermally induced rings may be observed in addition to Fabry-Pérot interference fringes spaced by half the Fermi wavelength. If the contact is made of a quantum dot opened in the middle of a Kondo valley, we show how the location of the rings allows to measure by electron interferometry the magnetic moment of the dot above the Kondo temperature.

preprint2010arXiv

Thermal Enhancement of Interference Effects in Quantum Point Contacts

We study an electron interferometer formed with a quantum point contact and a scanning probe tip in a two-dimensional electron gas. The images giving the conductance as a function of the tip position exhibit fringes spaced by half the Fermi wavelength. For a contact opened at the edges of a quantized conductance plateau, the fringes are enhanced as the temperature T increases and can persist beyond the thermal length l_T. This unusual effect is explained assuming a simplified model: The fringes are mainly given by a contribution which vanishes when T -> 0 and has a decay characterized by a T-independent scale.

preprint2010arXiv

Universal Scaling of the Quantum Conductance of an Inversion-Symmetric Interacting Model

We consider quantum transport of spinless fermions in a 1D lattice embedding an interacting region (two sites with inter-site repulsion U and inter-site hopping td, coupled to leads by hopping terms tc). Using the numerical renormalization group for the particle-hole symmetric case, we study the quantum conductance g as a function of the inter-site hopping td. The interacting region, which is perfectly reflecting when td -> 0 or td -> infinity, becomes perfectly transmitting if td takes an intermediate value τ(U,tc) which defines the characteristic energy of this interacting model. When td < tc sqrt(U), g is given by a universal function of the dimensionless ratio X=td/τ. This universality characterizes the non-interacting regime where τ=tc^2, the perturbative regime (U < tc^2) where τcan be obtained using Hartree-Fock theory, and the non-perturbative regime (U > tc^2) where τis twice the characteristic temperature TK of an orbital Kondo effect induced by the inversion symmetry. When td < τ, the expression g(X)=4/(X+1/X)^2 valid without interaction describes also the conductance in the presence of the interaction. To obtain those results, we map this spinless model onto an Anderson model with spins, where the quantum impurity is at the end point of a semi-infinite 1D lead and where td plays the role of a magnetic field h. This allows us to describe g(td) using exact results obtained for the magnetization m(h) of the Anderson model at zero temperature. We expect this universal scaling to be valid also in models with 2D leads, and observable using 2D semi-conductor heterostructures and an interacting region made of two identical quantum dots with strong capacitive inter-dot coupling and connected via a tunable quantum point contact.

preprint2007arXiv

Effect of flux-dependent Friedel oscillations upon the effective transmission of an interacting nano-system

We consider a nano-system connected to measurement probes via non interacting leads. When the electrons interact inside the nano-system, the coefficient |ts(E_F)|^2 describing its effective transmission at the Fermi energy E_F ceases to be local. This effect of electron-electron interactions upon |ts(E_F)|^2 is studied using a one dimensional model of spinless fermions and the Hartree-Fock approximation. The non locality of |ts(E_F)|^2 is due to the coupling between the Hartree and Fock corrections inside the nano-system and the scatterers outside the nano-system via long range Friedel oscillations. Using this phenomenon, one can vary |ts(E_F)|^2 by an Aharonov-Bohm flux threading a ring which is attached to one lead at a distance Lc from the nano-system. For small distances Lc, the variation of the quantum conductance induced by this non local effect can exceed 0.1 (e^2/h).

preprint2000arXiv

Role of a parallel magnetic field in two dimensional disordered clusters containing a few correlated electrons

An ensemble of 2d disordered clusters with a few electrons is studied as a function of the Coulomb energy to kinetic energy ratio r_s. Between the Fermi system (small r_s) and the Wigner molecule (large r_s), an interaction induced delocalization of the ground state takes place which is suppressed when the spins are aligned by a parallel magnetic field. Our results confirm the existence of an intermediate regime where the Wigner antiferromagnetism defavors the Stoner ferromagnetism and where the enhancement of the Lande g factor observed in dilute electron systems is reproduced.

preprint2000arXiv

Signatures of an intermediate 2d Coulomb phase at low temperatures

The study of the ground state of spinless fermions in 2d disordered clusters (Phys. Rev. Lett. {\bf 83}, 1826 (1999)) has suggested the existence of a new quantum phase for intermediate Coulomb energy to kinetic energy ratios $r_s$. Exact diagonalization of the same small clusters show that its low energy excitations (quantum ergodicity above a few ``hexatic'' excitations characterized by oriented currents) significantly differ from those occuring in the Fermi glass (weak $r_s$) and in the pinned Wigner crystal (large $r_s$). The ``hexatic'' excitations vanish for temperatures of order of the Fermi temperature.